Carrier Mobility Modulation in Cu2Se Composites Using Coherent Cu4TiSe4 Inclusions Leads to Enhanced Thermoelectric Performance.

Carrier transport engineering in bulk semiconductors using inclusion phases often results in the deterioration of carrier mobility (µ) owing to enhanced carrier scattering at phase boundaries. Here, we show by leveraging the temperature-induced structural transition between the α-Cu2Se and ß-Cu2Se polymorphs that the incorporation of Cu4TiSe4 inclusions within the Cu2Se matrix results in a gradual large drop in the carrier mobility at temperatures below 400 K (α-Cu2Se), whereas the carrier mobility remains unchanged at higher temperatures, where the ß-Cu2Se polymorph dominates. The sharp discrepancy in the electronic transport within the α-Cu2Se and ß-Cu2Se matrices is associated with the formation of incoherent α-Cu2Se/Cu4TiSe4 interfaces, owing to the difference in their atomic structures and lattice parameters, which results in enhanced carrier scattering. In contrast, the similarity of the Se sublattices between ß-Cu2Se and Cu4TiSe4 gives rise to coherent phase boundaries and good band alignment, which promote carrier transport across the interfaces. Interestingly, the different cation arrangements in Cu4TiSe4 and ß-Cu2Se contribute to enhanced phonon scattering at the interfaces, which leads to a reduction in the lattice thermal conductivity. The large reduction in the total thermal conductivity while preserving the high power factor of ß-Cu2Se in the (1-x)Cu2Se/(x)Cu4TiSe4 composites results in an improved ZT of 1.2 at 850 K, with an average ZT of 0.84 (500-850 K) for the composite with x = 0.01. This work highlights the importance of structural similarity between the matrix and inclusions when designing thermoelectric materials with improved energy conversion efficiency.

Unusual electronic transport in (1 - x)Cu2Se-(x)CuInSe2 hierarchical composites.

The ability to control the relative density of electronic point defects as well as their energy distribution in semiconductors could afford a systematic modulation of their electronic, optical, and optoelectronic properties. Using a model binary hybrid system Cu2Se-CuInSe2, we have investigated the correlation between phase composition, microstructure, and electronic transport behavior in the synthesized composites. We found that both Cu2Se and CuInSe2 phases coexist at multiple length scales, ranging from sub-ten nanometer to several micrometers, leading to the formation of a hybrid hierarchical microstructure. Astonishingly, the electronic phase diagram of the (1 - x)Cu2Se-(x)CuInSe2 (15% ≤ x ≤ 100%) hierarchical composites remarkably deviates from the trend normally expected for composites between a heavily doped semiconductor (Cu2Se) and a poorly conducting phase (CuInSe2). A sudden 3-fold increase in the electrical conductivity and carrier concentration along with a marginal increase in the carrier mobility is observed for composites at the vicinity of equimolar composition (48% ≤ x ≤ 52%). The carrier concentration increases from ∼1.5 × 1020 cm-3 for the composites with x ≤ 45% to 5.0 × 1020 cm-3 for x = 50%, and remains constant at 4.5 × 1020 cm-3 with x value in the range of 52% < x ≤ 90%, then quickly drops to 8 × 1018 cm-3 for pristine CuInSe2 phase (x = 100%). The atypical electronic behavior was rationalized in the light of the formation of an inter-band (IB) within the band gap, which arises from the hybridization of native electronic point defects from both Cu2Se and CuInSe2 phases in the resulting hierarchical composites. The result points to a new strategy to modulate the electronic structure of semiconductor composites to maximize interaction and coupling between two fundamentally contrasting properties enabling access to electronic hybrid systems with potential applications as interactive and stimuli-responsive multifunctional materials.

CuAlSe2 Inclusions Trigger Dynamic Cu+ Ion Depletion from the Cu2Se Matrix Enabling High Thermoelectric Performance.

Atomic-scale incorporation of CuAlSe2 inclusions within the Cu2Se matrix, achieved through a solid-state transformation of CuSe2 template precursor using elemental Cu and Al, enables a unique temperature-dependent dynamic doping of the Cu2Se matrix. The CuAlSe2 inclusions, due to their ability to accommodate a large fraction of excess metal atoms within their crystal lattice, serve as a "reservoir" for Cu ions diffusing away from the Cu2Se matrix. Such unidirectional diffusion of Cu ions from the Cu2Se matrix to the CuAlSe2 inclusion leads to the formation, near the CuAlSe2/Cu2Se interface, of a high density of Cu-deficient ß-Cu2-δSe nanoparticles within the α-Cu2Se matrix and the formation of Cu-rich Cu1+yAlSe2 nanoparticles with the CuAlSe2 inclusions. This gives rise to a large enhancement in carrier concentration and electrical conductivity at elevated temperatures. Furthermore, the nanostructuring near the CuAlSe2/Cu2Se interface, as well as the extensive atomic disorder in the Cu2Se and CuAlSe2 phases, significantly increases phonon scattering, leading to suppressed lattice thermal conductivity. Consequently, a significant improvement in ZT is observed for selected Cu2Se/CuAlSe2 composites. This work demonstrates the use of in situ-formed interactive secondary phases in a semiconducting matrix as an elegant alternative approach for further improvement of the performance of leading thermoelectric materials.

Lone-Electron-Pair Micelles Strengthen Bond Anharmonicity in MnPb16Sb14S38 Complex Sulfosalt Leading to Ultralow Thermal Conductivity.

Designing crystalline solids in which intrinsically and extremely low lattice thermal conductivity mainly arises from their unique bonding nature rather than structure complexity and/or atomic disorder could promote thermal energy manipulation and utilization for applications ranging from thermoelectric energy conversion to thermal barrier coatings. Here, we report an extremely low lattice thermal conductivity of ∼0.34 W m-1 K-1 at 300 K in the new complex sulfosalt MnPb16Sb14S38. We attribute the ultralow lattice thermal conductivity to a synergistic combination of scattering mechanisms involving (1) strong bond anharmonicity in various structural building units, owing to the presence of stereoactive lone-electron-pair (LEP) micelles and (2) phonon scattering at the interfaces between building units of increasing size and complexity. Remarkably, low-temperature heat capacity measurement revealed a Cp value of 0.206 J g-1 K-1 at T > 300 K, which is 22% lower than the Dulong-Petit value (0.274 J g-1 K-1). Further analysis of the Cp data and sound velocity (ν = 1834 m s-1) measurement yielded Debye temperature values of 161 and 187 K, respectively. The resulting Grüneisen parameter, γ = 1.65, further supports strong bond anharmonicity as the dominant mechanism responsible for the observed extremely low lattice thermal conductivity.

Nanoscale Engineering of Polymorphism in Cu2Se-Based Composites.

Crystal polymorphism selection during synthesis is extremely challenging. However, promoting the formation of a specific metastable polymorph enables modulation of the functional properties of phase-change materials through alteration of the relative abundance of various polymorphs. Here, we demonstrate the stabilization of the superionic ß-Cu2Se phase under ambient conditions and the direct control over the relative ratio between the α-Cu2Se and ß-Cu2Se polymorphs in (x)CuGaSe2/(1-x)Cu2Se composites using CuGaSe2 nanoseeds. We found that the small lattice mismatch between ß-Cu2Se (cubic) and the ab plane of tetragonal CuGaSe2 nanoseeds promotes the formation of low-energy coherent CuGaSe2/ß-Cu2Se interfaces, leading to preferential stabilization of ß-Cu2Se. Astonishingly, the hierarchical microstructure of the resulting composites enables a remarkable decoupling of charge and heat transport, which is manifested by a breakdown of the Wiedemann-Franz law.

Enhanced Thermoelectric Performance of Bi0.46Sb1.54Te3 Nanostructured with CdTe.

Cd-containing polycrystalline Bi0.46Sb1.54Te3 samples with precisely controlled phase composition were synthesized by conventional melting-quenching-annealing technique and a melt-spinning method. The pseudo ternary phase diagram for Cd-Bi/Sb-Te in the region near Bi0.46Sb1.54Te3 was systematically studied. Cd serves as an acceptor dopant contributing holes, whereas for samples doped with CdTe, the combined effects of the substitution of Sb/Bi with Cd and the formation of Sb/BiTe antisite defects leads to the increase in hole concentration. Moreover, upon doping with Cd, the lattice thermal conductivity decreases significantly owing to the intensified point defect phonon scattering. The sample with Cd content of 0.01 attains the maximum ZT of 1.15 at 425 K. The utilization of melt-spinning method brings about the in situ nanostructured CdTe and grain size refinement, which further reduce the lattice thermal conductivity while preserving excellent electrical performance. As a result, a higher ZT of 1.30 at 425 K is realized with CdTe content x = 0.005.

Charge Disproportionation Triggers Bipolar Doping in FeSb2- xSn xSe4 Ferromagnetic Semiconductors, Enabling a Temperature-Induced Lifshitz Transition.

Ferromagnetic semiconductors (FMSs) featuring a high Curie transition temperature ( Tc) and a strong correlation between itinerant carriers and localized magnetic moments are of tremendous importance for the development of practical spintronic devices. The realization of such materials hinges on the ability to generate and manipulate a high density of itinerant spin-polarized carriers and the understanding of their responses to external stimuli. In this study, we demonstrate the ability to tune magnetic ordering in the p-type FMS FeSb2- xSn xSe4 (0 ≤ x ≤ 0.20) through carrier density engineering. We found that the substitution of Sb by Sn FeSb2- xSn xSe4 increases the ordering of metal atoms within the selenium crystal lattice, leading to a large separation between magnetic centers. This results in a decrease in the Tc from 450 K for samples with x ≤ 0.05 to 325 K for samples with 0.05 < x ≤ 0.2. In addition, charge disproportionation arising from the substitution of Sb3+ by Sn2+ triggers the partial oxidation of Sb3+ to Sb5+, which is accompanied by the generation of both electrons and holes. This leads to a drastic decrease in the electrical resistivity and thermopower simultaneously with a large increase in the magnetic susceptibility and saturation magnetization upon increasing Sn content. The observed bipolar doping induces a very interesting temperature-induced quantum electronic transition (Lifshitz transition), which is manifested by the presence of an anomalous peak in the resistivity curve simultaneously with a reversal of the sign of a majority of the charge carriers from hole-like to electron-like at the temperature of maximum resistivity. This study suggests that while there is a strong correlation between the overall magnetic moment and free carrier spin in FeSb2- xSn xSe4 FMSs, the magnitude of the Curie temperature strongly depends on the spatial separation between localized magnetic centers rather than the concentration of magnetic atoms or the density of itinerant carriers.

Sustainable p-type copper selenide solar material with ultra-large absorption coefficient.

Earth-abundant solar absorber materials with large optical absorption coefficients in the visible enable the fabrication of low-cost high-efficiency single and multi-junction thin-film solar cells. Here, we report a new p-type semiconductor, Cu4TiSe4 (CTSe), featuring indirect (1.15 eV) and direct (1.34 eV) band gaps in the optimal range for solar absorber materials. CTSe crystallizes in a new noncentrosymmetric cubic structure (space group F4[combining macron]3c) in which CuSe4 tetrahedra share edges and corners to form octahedral anionic clusters, [Cu4Se4]4-, which in turn share corners to build the three-dimensional framework, with Ti4+ ions located at tetrahedral interstices within the channels. The unique crystal structure and the Ti 3d orbital character of the conduction band of CTSe give rise to near-optimal band gap values and ultra-large absorption coefficients (larger than 105 cm-1) throughout the visible range, which are promising for scalable low-cost high-efficiency CTSe-based thin-film solar cells.

Insights on the Synthesis, Crystal and Electronic Structures, and Optical and Thermoelectric Properties of Sr1- xSb xHfSe3 Orthorhombic Perovskite.

Single-phase polycrystalline powders of Sr1- xSb xHfSe3 ( x = 0, 0.005, 0.01), a new member of the chalcogenide perovskites, were synthesized using a combination of high temperature solid-state reaction and mechanical alloying approaches. Structural analysis using single-crystal as well as powder X-ray diffraction revealed that the synthesized materials are isostructural with SrZrSe3, crystallizing in the orthorhombic space group Pnma (#62) with lattice parameters a = 8.901(2) Å; b = 3.943(1) Å; c = 14.480(3) Å; and Z = 4 for the x = 0 composition. Thermal conductivity data of SrHfSe3 revealed low values ranging from 0.9 to 1.3 W m-1 K-1 from 300 to 700 K, which is further lowered to 0.77 W m-1 K-1 by doping with 1 mol % Sb for Sr. Electronic property measurements indicate that the compound is quite insulating with an electrical conductivity of 2.9 S/cm at 873 K, which was improved to 6.7 S/cm by 0.5 mol % Sb doping. Thermopower data revealed that SrHfSe3 is a p-type semiconductor with thermopower values reaching a maximum of 287 µV/K at 873 K for the 1.0 mol % Sb sample. The optical band gap of Sr1- xSb xHfSe3 samples, as determined by density functional theory calculations and the diffuse reflectance method, is ∼1.00 eV and increases with Sb concentration to 1.15 eV. Careful analysis of the partial densities of states (PDOS) indicates that the band gap in SrHfSe3 is essentially determined by the Se-4p and Hf-5d orbitals with little to no contribution from Sr atoms. Typically, band edges of p- and d-character are a good indication of potentially strong absorption coefficient due to the high density of states of the localized p and d orbitals. This points to potential application of SrHfSe3 as absorbing layer in photovoltaic devices.

Crystal Structure and Thermoelectric Properties of the 7,7L Lillianite Homologue Pb6Bi2Se9.

Pb6Bi2Se9, the selenium analogue of heyrovsyite, crystallizes in the orthorhombic space group Cmcm (#63) with a = 4.257(1) Å, b = 14.105(3) Å, and c = 32.412(7) Å at 300 K. Its crystal structure consists of two NaCl-type layers, A and B, with equal thickness, N1 = N2 = 7, where N is the number of edge-sharing [Pb/Bi]Se6 octahedra along the central diagonal. In the crystal structure, adjacent layers are arranged along the c-axis such that bridging bicapped trigonal prisms, PbSe8, are located on a pseudomirror plane parallel to (001). Therefore, Pb6Bi2Se9 corresponds to a 7,7L member of the lillianite homologous series. Electronic transport measurements indicate that the compound is a heavily doped narrow band gap n-type semiconductor, with electrical conductivity and thermopower values of 350 S/cm and -53 µV/K at 300 K. Interestingly, the compound exhibits a moderately low thermal conductivity, ∼1.1 W/mK, in the whole temperature range, owing to its complex crystal structure, which enables strong phonon scattering at the twin boundaries between adjacent NaCl-type layers A and B. The dimensionless figure of merit, ZT, increases with temperature to 0.25 at 673 K.

High-Tc Ferromagnetism and Electron Transport in p-Type Fe(1-x)Sn(x)Sb2Se4 Semiconductors.

Single-phase polycrystalline powders of Fe(1-x)Sn(x)Sb2Se4 (x = 0 and 0.13) were synthesized by a solid-state reaction of the elements at 773 K. X-ray diffraction on Fe0.87Sn0.13Sb2Se4 single-crystal and powder samples indicates that the compound is isostructural to FeSb2Se4 in the temperature range from 80 to 500 K, crystallizing in the monoclinic space group C2/m (No. 12). Electron-transport data reveal a marginal alteration in the resistivity, whereas the thermopower drops by ∼60%. This suggests a decrease in the activation energy upon isoelectronic substitution of 13% Fe by Sn. Magnetic susceptibility and magnetization measurements from 2 to 500 K reveal that the Fe(1-x)Sb2Sn(x)Se4 phases exhibit ferromagnetic behavior up to ∼450 K (x = 0) and 325 K (x = 0.13). Magnetotransport data for FeSb2Se4 reveal large negative magnetoresistance, suggesting spin polarization of free carriers in the sample. The high-Tc ferromagnetism in Fe(1-x)Sn(x)Sb2Se4 phases and the decrease in Tc of the Fe0.87Sn0.13Sb2Se4 sample are rationalized by taking into account (1) the separation between neighboring magnetic centers in the crystal structures and (2) the formation of bound magnetic polarons, which overlap to induce long-range ferromagnetic ordering.

Pb7Bi4Se13: a lillianite homologue with promising thermoelectric properties.

Pb(7)Bi(4)Se(13) crystallizes in the monoclinic space group C2/m (No. 12) with a = 13.991(3) Å, b = 4.262(2) Å, c = 23.432(5) Å, and ß = 98.3(3)° at 300 K. In its three-dimensional structure, two NaCl-type layers A and B with respective thicknesses N(1) = 5 and N(2) = 4 [N = number of edge-sharing (Pb/Bi)Se6 octahedra along the central diagonal] are arranged along the c axis in such a way that the bridging monocapped trigonal prisms, PbSe7, are located on a pseudomirror plane parallel to (001). This complex atomic-scale structure results in a remarkably low thermal conductivity (∼0.33 W m(-1) K(-1) at 300 K). Electronic structure calculations and diffuse-reflectance measurements indicate that Pb(7)Bi(4)Se(13) is a narrow-gap semiconductor with an indirect band gap of 0.23 eV. Multiple peaks and valleys were observed near the band edges, suggesting that Pb(7)Bi(4)Se(13) is a promising compound for both n- and p-type doping. Electronic-transport data on the as-grown material reveal an n-type degenerate semiconducting behavior with a large thermopower (∼-160 µV K(-1) at 300 K) and a relatively low electrical resistivity. The inherently low thermal conductivity of Pb(7)Bi(4)Se(13) and its tunable electronic properties point to a high thermoelectric figure of merit for properly optimized samples.

Coexistence of high-T(c) ferromagnetism and n-type electrical conductivity in FeBi2Se4.

The discovery of n-type ferromagnetic semiconductors (n-FMSs) exhibiting high electrical conductivity and Curie temperature (Tc) above 300 K would dramatically improve semiconductor spintronics and pave the way for the fabrication of spin-based semiconducting devices. However, the realization of high-Tc n-FMSs and p-FMSs in conventional high-symmetry semiconductors has proven extremely difficult due to the strongly coupled and interacting magnetic and semiconducting sublattices. Here we show that decoupling the two functional sublattices in the low-symmetry semiconductor FeBi2Se4 enables unprecedented coexistence of high n-type electrical conduction and ferromagnetism with Tc ≈ 450 K. The structure of FeBi2Se4 consists of well-ordered magnetic sublattices built of [FenSe4n+2]∞ single-chain edge-sharing octahedra, coherently embedded within the three-dimensional Bi-rich semiconducting framework. Magnetotransport data reveal a negative magnetoresistance, indicating spin-polarization of itinerant conducting electrons. These findings demonstrate that decoupling magnetic and semiconducting sublattices allows access to high-Tc n- and p-FMSs as well as helps unveil the mechanism of carrier-mediated ferromagnetism in spintronic materials.

Electronic and phonon transport in Sb-doped Ti(0.1)Zr(0.9)Ni(1+x)Sn(0.975)Sb(0.025) nanocomposites.

The thermoelectric behavior of n-type Sb-doped half-Heusler (HH)-full-Heusler (FH) nanocomposites with general composition Ti(0.1)Zr(0.9)Ni(1+x)Sn(0.975)Sb(0.025) (x = 0, 0.02, 0.04, 0.1) was investigated in the temperature range from 300 to 775 K. Samples used for structural characterization and transport measurements were obtained through the solid-state reaction of high purity elements at 950 °C and densification of the resulting polycrystalline powders using a uniaxial hot press. X-ray diffraction study of the powder samples suggested the formation of single-phase HH alloys regardless of the Ni concentration (x value). However, high resolution transmission electron microscopy investigation revealed the presence of spherical nanoprecipitates with a broad size distribution coherently embedded in the HH matrix. The size range and dispersion of the precipitates depend on the concentration of Ni in the starting mixture. Well dispersed nanoprecipitates with size ranging from 5 nm to 50 nm are observed in the nanocomposite with x = 0.04, while severe agglomeration of large precipitates (>50 nm) is observed in samples with x = 0.1. Hall effect measurements of various samples indicate that the carrier concentration within the Sb-doped HH matrix remains nearly constant (~7 × 10(20) cm(-3)) for samples with x = 0.02 and x = 0.04, whereas a significant increase of the carrier concentration to ~9 × 10(20) cm(-3) is observed for the sample with x = 0.1. Interestingly, only a marginal change in thermopower value is observed for various samples despite the large difference in the carrier density. In addition, the carrier mobility remains constant up to x = 0.04 suggesting that the small nanoprecipitates in these samples do not disrupt electronic transport within the matrix. Remarkably, a large reduction in the total thermal conductivity is observed for all nanocomposites, indicating the effectiveness of the embedded nanoprecipitates in scattering phonons while enabling efficient electron transfer across the matrix/inclusion interfaces.

Geometrical spin frustration and ferromagnetic ordering in (MnxPb2-x)Pb2Sb4Se10.

Engineering the atomic structure of an inorganic semiconductor to create isolated one-dimensional (1D) magnetic subunits that are embedded within the semiconducting crystal lattice can enable chemical and electronic manipulation of magnetic ordering within the magnetic domains, paving the way for (1) the investigation of new physical phenomena such as the interactions between electron transport and localized magnetic moments at the atomic scale and (2) the design and fabrication of geometrically frustrated magnetic materials featuring cooperative long-range ordering with large magnetic moments. We report the design, synthesis, crystal structure and magnetic behavior of (MnxPb2-x)Pb2Sb4Se10, a family of three-dimensional manganese-bearing main-group metal selenides featuring quasi-isolated [(MnxPb2-x)3Se30]∞ hexanuclear magnetic ladders coherently embedded and uniformly distributed within a purely inorganic semiconducting framework, [Pb2Sb4Se10]. Careful structural analysis of the magnetic subunit, [(MnxPb2-x)3Se30]∞ and the temperature dependent magnetic susceptibility of (MnxPb2-x)Pb2Sb4Se10, indicate that the compounds are geometrically frustrated 1D ferromagnets. Interestingly, the degree of geometrical spin frustration (f) within the magnetic ladders and the strength of the intrachain antiferromagnetic (AFM) interactions strongly depend on the concentration (x value) and the distribution of the Mn atom within the magnetic substructure. The combination of strong intrachain AFM interactions and geometrical spin frustration in the [(MnxPb2-x)3Se30]∞ ladders results in a cooperative ferromagnetic order with exceptionally high magnetic moment at around 125 K. Magnetotransport study of the Mn2Pb2Sb4Se10 composition over the temperature range from 100 to 200 K revealed negative magnetoresistance (NMR) values and also suggested a strong contribution of magnetic polarons to the observed large effective magnetic moments.

Enhancing thermopower and hole mobility in bulk p-type half-Heuslers using full-Heusler nanostructures.

The concept of band structure engineering near the Fermi level through atomic-scale alteration of a bulk semiconductor crystal structure using coherently embedded intrinsic semiconducting quantum dots provides a unique opportunity to manipulate the transport behavior of the existing ensembles of carriers within the semiconducting matrix. Here we show that in situ growth of coherent nanometer-scale full-Heusler quantum dots (fH-QDs) within the p-type Ti(0.5)Hf(0.5)CoSb(0.9)Sn(0.1) half-Heusler (hH) matrix induces a drastic decrease of the effective hole density within the hH/fH-QD nanocomposites at 300 K followed by a sharp increase with rising temperature. This behavior is associated with the formation of staggered heterojunctions with a valence band (VB) offset energy, ΔE at the hH/fH phase boundaries. The energy barrier (ΔE) discriminates existing holes with respect to their energy by trapping low energy (LE) holes, while promoting the transport of high energy (HE) holes through the VB of the fH-QDs. This "hole culling" results in surprisingly large increases in the mobility and the effective mass of HE holes contributing to electronic conduction. The simultaneous reduction in the density and the increase in the effective mass of holes resulted in large enhancements of the thermopower whereas; the increase in the mobility minimizes the drop in the electrical conductivity.

Large enhancements of thermopower and carrier mobility in quantum dot engineered bulk semiconductors.

The thermopower (S) and electrical conductivity (σ) in conventional semiconductors are coupled adversely through the carriers' density (n) making it difficult to achieve meaningful simultaneous improvements in both electronic properties through doping and/or substitutional chemistry. Here, we demonstrate the effectiveness of coherently embedded full-Heusler (FH) quantum dots (QDs) in tailoring the density, mobility, and effective mass of charge carriers in the n-type Ti(0.1)Zr(0.9)NiSn half-Heusler matrix. We propose that the embedded FH QD forms a potential barrier at the interface with the matrix due to the offset of their conduction band minima. This potential barrier discriminates existing charge carriers from the conduction band of the matrix with respect to their relative energy leading to simultaneous large enhancements of the thermopower (up to 200%) and carrier mobility (up to 43%) of the resulting Ti(0.1)Zr(0.9)Ni(1+x)Sn nanocomposites. The improvement in S with increasing mole fraction of the FH-QDs arises from a drastic reduction (up to 250%) in the effective carrier density coupled with an increase in the carrier's effective mass (m*), whereas the surprising enhancement in the mobility (µ) is attributed to an increase in the carrier's relaxation time (τ). This strategy to manipulate the transport behavior of existing ensembles of charge carriers within a bulk semiconductor using QDs is very promising and could pave the way to a new generation of high figure of merit thermoelectric materials.