ABSTRACT
Light-driven conductance switching in molecular tunnelling junctions that relies on photoisomerization is constrained by the limitations of kinetic traps and either by the sterics of rearranging atoms in a densely packed monolayer or the small absorbance of individual molecules. Here we demonstrate light-driven conductance gating; devices comprising monolayers of hemicyanine dyes trapped between two metallic nanowires exhibit higher conductance under irradiation than in the dark. The modulation of the tunnelling current occurs faster than the timescale of the measurement (â¼1 min). We propose a mechanism in which a fraction of molecules enters an excited state that brings the conjugated portion of the monolayer into resonance with the electrodes. This mechanism is supported by calculations showing the delocalization of molecular orbitals near the Fermi energy in the excited and cationic states, but not the ground state and a reasonable change in conductance with respect to the effective barrier width.
ABSTRACT
This paper describes the fabrication of millimeter-long gold nanowires that bisect the center of microfluidic channels. We fabricated the nanowires by nanoskiving and then suspended them over a trench in a glass structure. The channel was sealed by bonding it to a complementary poly(dimethylsiloxane) structure. The resulting structures place the nanowires in the region of highest flow, as opposed to the walls, where it approaches zero, and expose their entire surface area to fluid. We demonstrate active functionality, by constructing a hot-wire anemometer to measure flow through determining the change in resistance of the nanowire as a function of heat dissipation at low voltage (<5 V). Further, passive functionality is demonstrated by visualizing individual, fluorescently labeled DNA molecules attached to the wires. We measure rates of flow and show that, compared to surface-bound DNA strands, elongation saturates at lower rates of flow and background fluorescence from nonspecific binding is reduced.
ABSTRACT
There are several methods of fabricating nanogaps with controlled spacings, but the precise control over the sub-nanometer spacing between two electrodes-and generating them in practical quantities-is still challenging. The preparation of nanogap electrodes using nanoskiving, which is a form of edge lithography, is a fast, simple and powerful technique. This method is an entirely mechanical process which does not include any photo- or electron-beam lithographic steps and does not require any special equipment or infrastructure such as clean rooms. Nanoskiving is used to fabricate electrically addressable nanogaps with control over all three dimensions; the smallest dimension of these structures is defined by the thickness of the sacrificial layer (Al or Ag) or self-assembled monolayers. These wires can be manually positioned by transporting them on drops of water and are directly electrically-addressable; no further lithography is required to connect them to an electrometer.
Subject(s)
Aluminum/chemistry , Metal Nanoparticles/chemistry , Nanotechnology/methods , Nanowires/chemistry , Silver/chemistry , Electric Conductivity , Epoxy Compounds/chemistry , Equipment Design , Nanotechnology/instrumentation , Silicon/chemistry , Sulfhydryl Compounds/chemistryABSTRACT
This paper describes the fabrication of electrically addressable, high-aspect-ratio (>10000:1) nanowires of gold with square cross sections of 100 nm on each side that are separated by gaps of 1.7-2.2 nm which were defined using self-assembled monolayers (SAMs) as templates. We fabricated these nanowires and nanogaps without a clean room or any photo- or electron-beam lithographic processes by mechanically sectioning sandwich structures of gold separated by a SAM using an ultramicrotome. This process is a form of edge lithography known as Nanoskiving. These wires can be manually positioned by transporting them on drops of water and are directly electrically addressable; no further lithography is required to connect them to an electrometer. Once a block has been prepared for Nanoskiving (which takes less than one day), hundreds of thousands of nanogaps can be generated, on demand, at a rate of about one nanogap per second. After ashing the organic components with oxygen plasma, we measured the width of a free-standing gap formed from a SAM of 16-mercaptodohexanoic acid (2.4 nm in length) of 2.6 ± 0.5 nm by transmission electron microscopy. By fitting current-voltage plots of unashed gaps containing three alkanedithiolates of differing lengths to Simmons' approximation, we derived a value of ß = 0.75 Å(-1) (0.94 n(C)(-1)) at 500 mV. This value is in excellent agreement with literature values determined by a variety of methods, demonstrating that the gap-size can be controlled at resolutions as low as 2.5 Å (i.e., two carbon atoms).