Different regimes of the Purcell effect in disordered photonic crystals.

We demonstrate that disorder in photonic crystals could lead to pronounced modification of spontaneous emission rate in the frequency region corresponding to the photonic band gap (PBG). Depending on the amount of disorder, two different regimes of the Purcell effect occurs. We provide statistical analysis of Purcell coefficient on the frequency of the emitter and its position within the sample. For the moderate disorder, an enhancement of spontaneous emission occurs at the edge of PBG due to the modification of properties of the edge state. This effect is responsible for recently observed mirrorless lasing in photonic crystals at the edge of PBG. When the level of disorder increases, the spontaneous emission rate enhances within the PBG due to the appearance of the high quality factor states. This effect is likely responsible for a superlinear dependence of emissions on pumping observed in synthetic opals.

Enhancement of spontaneous emission in Tamm plasmon structures.

It was theoretically and experimentally demonstrated that in metal/semiconductor Tamm plasmon structures the probability of spontaneous emission can be increased despite losses in metal, and theoretical analysis of experimental results suggested that the enhancement could be as high as one order of magnitude. Tamm plasmon structure with quantum dots has been fabricated and the emission pattern has been measured. Electromagnetic modes of the structure have been analyzed and modification of spontaneous emission rates has been calculated showing a good agreement with experimentally observed emission pattern.

Emission properties of Ga2O3 nano-flakes: effect of excitation density.

In the quest of developing high performance electronic and optical devices and more cost effective fabrication processes of monoclinic ß-Ga2O3, new growth techniques and fundamental electronic and optical properties of defects have to be explored. By heating of dissolved metallic Ga in HCl in a NH3 and N2 atmosphere, nano-flake films of monoclinic ß-phase Ga2O3 were grown as confirmed by XRD. From optical measurements, we observe two strong emissions. A red band peaking at ~2.0 eV and a UV band at ~3.8 eV. The band at ~2.0 eV is attributed to donor-acceptor pair recombination where the donor and acceptor level is suggested to be related to VO and nitrogen, respectively. By studying the dependence of the intensity of the UV band at 3.8 eV versus excitation density, a model is suggested. In the model, it is assumed that local potential fluctuations forming minima (maxima), where the carriers would be localized with a summarized band offset for conduction and valence band of 1 eV. The origin of the fluctuations is tentatively suggested to be related to micro-inclusions of different phases in the film.

III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared.

Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are much in demand. Here, we present site-controlled III-nitride monocrystal cup-cavities grown by molecular beam epitaxy. The cup-cavities can operate from ultraviolet to near-infrared, supporting quasi whispering gallery modes up to room temperature. Besides, their energies are identical in large 'ripened' crystals. In these cavities, the refractive index variation near an absorption edge causes the remarkable effect of mode switching, which is accompanied by the spatial redistribution of electric field intensity with concentration of light into a subwavelength volume. Our results shed light on the mode behavior in semiconductor cavities and open the way for single-growth-run manufacturing the devices comprising an active region and a cavity with tunable mode frequencies.

Super-radiant mode in InAs-monolayer-based Bragg structures.

We report direct experimental evidence of the collective super-radiant mode in Bragg structure containing 60 InAs monolayer-based quantum wells (QWs) periodically arranged in GaAs matrix. Time-resolved photoluminescence measurements reveal an appearance of the additional super-radiant mode, originated from coherent collective interaction of QWs. This mode demonstrates a super-linear dependence of the intensity and radiative decay rate on the excitation power. The super-radiant mode is not manifested in the case if only a small number of QWs is excited.

Stacking fault related luminescence in GaN nanorods.

Optical and structural properties are presented for GaN nanorods (NRs) grown in the [0001] direction on Si(111) substrates by direct-current reactive magnetron sputter epitaxy. Transmission electron microscopy (TEM) reveals clusters of dense stacking faults (SFs) regularly distributed along the c-axis. A strong emission line at ∼3.42 eV associated with the basal-plane SFs has been observed in luminescence spectra. The optical signature of SFs is stable up to room temperatures with the activation energy of ∼20 meV. Temperature-dependent time-resolved photoluminescence properties suggest that the recombination mechanism of the 3.42 eV emission can be understood in terms of multiple quantum wells self-organized along the growth axis of NRs.

Atom probe tomography study of Mg-doped GaN layers.

Atom probe tomography studies on highly Mg-doped homoepitaxial GaN (0001) layers with concentrations of 5 × 10(19) cm(-3) and 1 × 10(20) cm(-3) were performed. Mg cluster formation was observed only in the higher doped sample whereas in the lower doped sample the Mg distribution was homogeneous. CL measurements have shown that the emission normally attributed to stacking faults was only present in the lower doped layers (with Mg concentration of ∼5 × 10(19) cm(-3) or less), but absent in the higher doped layer, where Mg clusters were detected. Mg clusters are proposed to produce a screening effect, thereby destroying the exciton binding on the SFs and thus rendering them optically inactive.

Single and double bosonic stimulation of THz emission in polaritonic systems.

The influence of the surrounding cavity on the efficiency of different types of polaritonic emitters of THz radiation has been analysed. It is demonstrated that THz lasing threshold in realistic structures cannot be achieved without a THz cavity, due to destruction of polaritons via excitonic Mott transition. Even modest values of cavity quality factor (not exceeding 50) provide significant quantum efficiency.

Evidence for two Mg related acceptors in GaN.

The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically grown on bulk GaN templates, to avoid strain broadening of the optical spectra. Bound-exciton spectra can be studied in these samples for Mg concentrations up to [Mg] approximately 2 x 10(19) cm(-3). Contrary to previous work it is found that instabilities in the photoluminescence spectra are not due to unstable shallow donors, but to unstable Mg-related acceptors. Our data show that there are two Mg-related acceptors simultaneously present: the regular (stable) substitutional Mg acceptor, and a complex acceptor which is unstable in p-GaN.

Resonant light delay in GaN with ballistic and diffusive propagation.

We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation.