An ultralow power nanosensor array for selective detection of air pollutants.

Semiconducting metal oxide gas sensors typically operate at a high temperature and consume hundreds of milliwatts of power. Therefore there is great demand for the development of a low-power gas-sensing technology that can sensitively and selectively detect the gas analytes present in the atmosphere. We report an ultralow-power nanosensor array platform, integrated with an independently controlled nanoheater of size 4 µm × 100 nm, which consumes ∼1.8 mW power when operated continuously at 300 °C. The heaters exhibit a fast thermal response time of less than 1 µs, and can be utilized to operate in duty cycle mode, leading to power saving. The active area of the nanosensor is 1 µm × 200 nm, defined by sensing electrodes with a nanogap of ∼200nm, leading to small form factor. As a proof of concept, each of the sensing elements in the array is functionalized with different sensing materials to demonstrate a low-power, sensitive and selective multiplexed gas-sensing technology for the simultaneous detection of CO (∼93.2% for 3 ppm at 300 °C), CO2 (∼76.3% for 1000 ppm at 265 °C), NO2 (∼2301% for 3 ppm at 150 °C) and SO2 (∼94% for 3 ppm at 265 °C). The technology described here uses scalable crossbar architecture for sensor elements, thus enabling the integration of additional sensing materials and making it customizable for specific applications.

ppb level detection of NO2 using a WO3 thin film-based sensor: material optimization, device fabrication and packaging.

In this study, we have investigated the thickness-dependent nitrogen dioxide (NO2) sensing characteristics of a reactive-ion magnetron sputtered tungsten trioxide (WO3) film, followed by morphological and electrical characterizations. Subsequently, the sensing material was integrated with an MEMS platform to develop a sensor chip to integrate with electronics for portable applications. Sputtered films are studied for their sensing performance under different operating conditions to discover the optimum thickness of the film for integrating it with a CMOS platform. The optimized film thickness of ∼85 nm shows the 16 ppb lower limit of detection and 39 ppb detection precision at the optimum 150 °C operating temperature. The film exhibits an extremely high sensor response [(R g - R a)/R a × 100 = 26%] to a low (16 ppb) NO2 concentration, which is a comparatively high response reported to date among reactively sputtered films. Moreover, this optimum film has a longer recovery time than others. Thus, an intentional temperature overshoot is made part of the sensing protocol to desorb the NO2 species from the film surface, resulting in full recovery to the baseline without affecting the sensing material properties. Finally, the optimized film was successfully integrated on the sensor platform, which had a chip size of 1 mm2, with an inbuilt micro-heater. The minimum power consumption of the microheater is ∼6.6 mW (∼150 °C), which is practically acceptable. Later, the sensor device was packaged on a Kovar heater for the detailed electrical and sensing characterizations. This study suggests that optimization of the sensing material and optimum operating temperature help to develop a highly sensitive, selective, stable, and portable gas sensor for indoor or outdoor applications.