Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths.

Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons in the third communication window, with a wavelength around 1550 nm. Here, we present silicon LEDs based on the electroluminescence of Er:O complexes in Si. Such sources are fabricated with a fully-compatible CMOS process on a 220 nm-thick silicon-on-insulator (SOI) wafer, the common standard in silicon photonics. The implantation depth is tuned to match the center of the silicon layer. The erbium and oxygen co-doping ratio is tuned to optimize the electroluminescence signal. We fabricate a batch of Er:O diodes with surface areas ranging from 1 µm × 1 µm to 50 µm × 50 µm emitting 1550 nm photons at room temperature. We demonstrate emission rates around 5 × 106 photons/s for a 1 µm × 1 µm device at room temperature using superconducting nanowire detectors cooled at 0.8 K. The demonstration of Er:O diodes integrated in the 220 nm SOI platform paves the way towards the creation of integrated silicon photon sources suitable for arbitrary-statistic-tolerant QKD protocols.

Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength.

An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the µW range. The 1-µm² transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈ 4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics.

We propose germanium-vacancy complexes (GeVn) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.

1.54 µm photoluminescence from Er:Ox centers at extremely low concentration in silicon at 300 K.

The demand for single photon emitters at λ=1.54 µm, which follows from the consistent development of quantum networks based on optical fiber technologies, makes Er:Ox centers in Si a viable resource, thanks to the I13/24→I415/2 optical transition of Er3+. While its implementation in high-power applications is hindered by the extremely low emission rate, the study of such systems in the low concentration regime remains relevant for quantum technologies. In this Letter, we explore the room-temperature photoluminescence at the telecomm wavelength from very low implantation doses of Er:Ox in Si. The lower-bound number of optically active Er atoms detected is of the order of 102, corresponding to a higher-bound value for the emission rate per individual ion of about 104 s-1.

A reconfigurable cryogenic platform for the classical control of quantum processors.

The implementation of a classical control infrastructure for large-scale quantum computers is challenging due to the need for integration and processing time, which is constrained by coherence time. We propose a cryogenic reconfigurable platform as the heart of the control infrastructure implementing the digital error-correction control loop. The platform is implemented on a field-programmable gate array (FPGA) that supports the functionality required by several qubit technologies and that can operate close to the physical qubits over a temperature range from 4 K to 300 K. This work focuses on the extensive characterization of the electronic platform over this temperature range. All major FPGA building blocks (such as look-up tables (LUTs), carry chains (CARRY4), mixed-mode clock manager (MMCM), phase-locked loop (PLL), block random access memory, and IDELAY2 (programmable delay element)) operate correctly and the logic speed is very stable. The logic speed of LUTs and CARRY4 changes less then 5%, whereas the jitter of MMCM and PLL clock managers is reduced by 20%. The stability is finally demonstrated by operating an integrated 1.2 GSa/s analog-to-digital converter (ADC) with a relatively stable performance over temperature. The ADCs effective number of bits drops from 6 to 4.5 bits when operating at 15 K.

Band transport across a chain of dopant sites in silicon over micron distances and high temperatures.

Macroscopic manifestations of quantum mechanics are among the most spectacular effects of physics. In most of them, novel collective properties emerge from the quantum mechanical behaviour of their microscopic constituents. Others, like superconductivity, extend a property typical of the atomic scale to macroscopic length scale. Similarly, features of quantum transport in Hubbard systems which are only observed at nanometric distances in natural and artificial atoms embedded in quantum devices, could be in principle extended to macroscopic distances in microelectronic devices. By employing an atomic chain consists of an array of 20 atoms implanted along the channel of a silicon transistor with length of 1 µm, we extend to such unprecedented distance both the single electron quantum transport via sequential tunneling, and to room temperature the features of the Hubbard bands. Their observation provides a new example of scaling of quantum mechanical properties, previously observed only at the nanoscale, up to lengths typical of microelectronics, by opening new perspectives towards passage of quantum states and band engineering in silicon devices.

Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method.

The fabrication of future nanoscale semiconductor devices calls for precise placement of dopant atoms into their crystal lattice. Monolayer doping combined with a conventional spike annealing method provides a bottom-up approach potentially viable for large scale production. While the diffusion of the dopant was demonstrated at the start of the method, more sophisticated techniques are required in order to understand the diffusion, at the near surface, of P and contaminants such as C and O carried by the precursor, not readily accessible to direct time-of-flight secondary ion mass spectrometry measurements. By employing atom probe tomography, we report on the behavior of dopant and contaminants introduced by the molecular monolayer doping method into the first nanometers. The unwanted diffusion of C and O-related molecules is revealed and it is shown that for C and O it is limited to the first monolayers, where Si-C bonding formation is also observed, irrespective of the spike annealing temperature. From the perspective of large scale employment, our results suggest the benefits of adding a further process to the monolayer doping combined with spike annealing method, which consists of removing a sacrificial Si layer to eliminate contaminants.

Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor.

Dopant atoms are used to control the properties of semiconductors in most electronic devices. Recent advances such as single-ion implantation have allowed the precise positioning of single dopants in semiconductors as well as the fabrication of single-atom transistors, representing steps forward in the realization of quantum circuits. However, the interactions between dopant atoms have only been studied in systems containing large numbers of dopants, so it has not been possible to explore fundamental phenomena such as the Anderson-Mott transition between conduction by sequential tunnelling through isolated dopant atoms, and conduction through thermally activated impurity Hubbard bands. Here, we observe the Anderson-Mott transition at low temperatures in silicon transistors containing arrays of two, four or six arsenic dopant atoms that have been deterministically implanted along the channel of the device. The transition is induced by controlling the spacing between dopant atoms. Furthermore, at the critical density between tunnelling and band transport regimes, we are able to change the phase of the electron system from a frozen Wigner-like phase to a Fermi glass by increasing the temperature. Our results open up new approaches for the investigation of coherent transport, band engineering and strongly correlated systems in condensed-matter physics.

Few electron limit of n-type metal oxide semiconductor single electron transistors.

We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.

Ultra-broad and sharp-transition bandpass terahertz filters by hybridizing multiple resonances mode in monolithic metamaterials.

We present three monolithic metamaterial-based THz bandpass filters, the skewed circular slot rings, meandered slots and Jerusalem cross slots, to fit in the THz gap. These THz bandpass filters are comprised of a metal-dielectric-metal (MDM) structure that supports multiple resonances of electric dipole, magnetic dipole, and standing-wave-like modes. By exciting and further hybridizing these individual resonance modes, we demonstrate excellent performance of broad bandwidth and sharp band-edge transition beyond conventional bandpass filters. By further employing our ad hoc Genetic Algorithm (GA) and Periodic Method of Moments (PMM) to optimize our designs, we achieve an ultra-broad 3dB fractional bandwidth and sharp band-edge transition up to 82.2% and 58.3 dB/octave, respectively, benefiting the practical applications such as material recognition in security systems, imaging, and absorbers.

Valley blockade quantum switching in Silicon nanostructures.

In analogy to the Coulomb and the Pauli spin blockade, based on the electrostatic repulsion and the Pauli exclusion principle respectively, the concept of valley blockade in Silicon nanostructures is explored. The valley parity operator is defined. Valley blockade is determined by the parity conservation of valley composition eigenvectors in quantum transport. A Silicon quantum changeover switch based on a triple of donor quantum dots capable to separate electrons having opposite valley parity by virtue of the valley parity conservation is proposed. The quantum changeover switch represents a novel kind of hybrid quantum based classical logic device.

Microwave effects in silicon low dimensional nanostructures.

We review the effects of microwave irradiation on low dimensional electron systems in Silicon nanostructures. Depending on the temperature and the energy scales involved, different effects may be observed on the transition probabilities of elastic and inelastic processes. In particular two cases of 0 dimensional confinement are analyzed, i.e., the trapping of a single electron in point defects close to a two dimensional electron system, and in single donor atoms trapped in the channel of a nanoMOSFET. Microwave dependent capture and emission phenomena and photon assisted tunneling are described in such kind of systems. Consequences on the single spin resonance detection and on the spin manipulation are discussed.