Infrared Resonance Tuning of Nanoslit Antennas with Phase-Change Materials.

Phase-change materials (PCMs) have been established as prime candidates for nonvolatile resonance tuning of nanophotonic components based on a large optical contrast between their amorphous and crystalline states. Recently, the plasmonic PCM In3SbTe2 was introduced, which can be switched from an amorphous dielectric state to a crystalline metallic one over the entire infrared spectral range. While locally switching the PCM around metallic nanorod antennas has already been demonstrated, similar tuning of inverse antenna structures (nanoslits) has not yet been investigated. Here, we demonstrate optical resonance tuning of nanoslit antennas with dielectric and plasmonic PCMs. We compare two geometries with fundamentally different resonance tuning mechanisms: tuning the resonance of aluminum slit antennas by change of the refractive index (dielectric PCM Ge3Sb2Te6), and creating slit-like volumes of amorphous In3SbTe2 and modifying the slit geometry directly (plasmonic PCM In3SbTe2). While the tuning range with the plasmonic PCM is about 3.4 µm and only limited by fabrication, the resonances with the dielectric PCM feature a three times larger quality factor compared to resonances obtained with the plasmonic PCM.

Evolution of Short-Range Order of Amorphous GeTe Upon Structural Relaxation Obtained by TEM Diffractometry and RMC Methods.

Glasses frequently reveal structural relaxation that leads to changes in their physical properties including enthalpy, specific volume, and resistivity. Analyzing the short-range order (SRO) obtained from electron diffraction by transmission electron microscopy (TEM) in combination with Reverse-Monte-Carlo (RMC) simulations is shown to provide information on the atomic arrangement. The technique elaborated here features several benefits including reliability, accessibility, and allows for obtaining detailed structural data quickly. This is demonstrated with a detailed view of the structural changes in the as-deposited amorphous phase change material (PCM) GeTe. The data show a significant increase in the average bond angle upon thermal treatment. At the same time the fraction of tetrahedrally coordinated Ge atoms decreases due to an increase in octahedrally distorted and pyramidal motifs. This finding provides further evidence for the atomic processes that govern structural relaxation in amorphous GeTe and other PCMs. A thorough literature review finally unveils possible origins of the large discrepancies reported on the structure of amorphous GeTe.

Fast crystallization below the glass transition temperature in hyperquenched systems.

Many phase change materials (PCMs) are found to crystallize without exhibiting a glass transition endotherm upon reheating. In this paper, we review experimental evidence revealing that these PCMs and likely other hyperquenched molecular and metallic systems can crystallize from the glassy state when reheated at a standard rate. Among these evidences, PCMs annealed below the glass transition temperature Tg exhibit slower crystallization kinetics despite an increase in the number of sub-critical nuclei that should promote the crystallization speed. Flash calorimetry uncovers the glass transition endotherm hidden by crystallization and reveals a distinct change in kinetics when crystallization switches from the glassy to the supercooled liquid state. The resulting Tg value also rationalizes the presence of the pre-Tg relaxation exotherm ubiquitous of hyperquenched systems. Finally, the shift in crystallization temperature during annealing exhibits a non-exponential decay that is characteristic of structural relaxation in the glass. Modeling using a modified Turnbull equation for nucleation rate supports the existence of sub-Tg fast crystallization and emphasizes the benefit of a fragile-to-strong transition for PCM applications due to a reduction in crystallization at low temperature (improved data retention) and increasing its speed at high temperature (faster computing).

Highly tunable ß-relaxation enables the tailoring of crystallization in phase-change materials.

In glasses, secondary (ß-) relaxations are the predominant source of atomic dynamics. Recently, they have been discovered in covalently bonded glasses, i.e., amorphous phase-change materials (PCMs). However, it is unclear what the mechanism of ß-relaxations is in covalent systems and how they are related to crystallization behaviors of PCMs that are crucial properties for non-volatile memories and neuromorphic applications. Here we show direct evidence that crystallization is strongly linked to ß-relaxations. We find that the ß-relaxation in Ge15Sb85 possesses a high tunability, which enables a manipulation of crystallization kinetics by an order of magnitude. In-situ synchrotron X-ray scattering, dielectric functions, and ab-initio calculations indicate that the weakened ß-relaxation intensity stems from a local reinforcement of Peierls-like distortions, which increases the rigidity of the bonding network and decreases the dynamic heterogeneity. Our findings offer a conceptually new approach to tuning the crystallization of PCMs based on manipulating the ß-relaxations.

Examination of a Structural Preference in Quaternary Alkali-Metal (A) Rare-Earth (R) Copper Tellurides by Combining Experimental and Quantum-chemical Means.

In the quest for materials addressing the grand challenges of the future, there is a critical need for a broad understanding of their electronic structures because the knowledge of the electronic structure of a given solid allows us to recognize its structural preferences and to rationalize its properties. As previous research on quaternary chalcogenides containing active metals (a group-I- or -II-element), early transition-metals, and late transition-metals indicated that such materials could pose as alluring systems in the developments of thermoelectrics, our impetus was stimulated to probe the suitability of tellurides belonging to the prolific A3R4Cu5Te10-family. In doing so, we first used quantum-chemical techniques to explore the electronic and vibrational properties of representatives crystallizing with different A3R4Cu5Te10 structure types. The outcome of these explorations indicated that the aspects that control the formation of a given type of A3R4Cu5Te10 structure are rather subtle so that transitions between different types of A3R4Cu5Te10 structures could be induced by manipulating the ambient conditions. To probe this prediction, we explored the thermal behavior for the example of one quaternary telluride, that is, Rb3Er4Cu5Te10, and thereby identified a new type of A3R4Cu5Te10 structure. Because understanding the structural features of the A3R4Cu5Te10 family plays an important role in the analyses of the aforementioned explorations, we also present an overview about the structural features and the members of this class of quaternary tellurides. In this connection, we also provide a structural report of four tellurides, that is, K3Tb4Cu5Te10 and Rb3R4Cu5Te10 (R = Tb, Dy, Ho), which have been obtained from high-temperature solid-state reactions for the very first time.

Far-Infrared Near-Field Optical Imaging and Kelvin Probe Force Microscopy of Laser-Crystallized and -Amorphized Phase Change Material Ge3Sb2Te6.

Chalcogenide phase change materials reversibly switch between non-volatile states with vastly different optical properties, enabling novel active nanophotonic devices. However, a fundamental understanding of their laser-switching behavior is lacking and the resulting local optical properties are unclear at the nanoscale. Here, we combine infrared scattering-type scanning near-field optical microscopy (SNOM) and Kelvin probe force microscopy (KPFM) to investigate four states of laser-switched Ge3Sb2Te6 (as-deposited amorphous, crystallized, reamorphized, and recrystallized) with nanometer lateral resolution. We find SNOM to be especially sensitive to differences between crystalline and amorphous states, while KPFM has higher sensitivity to changes introduced by melt-quenching. Using illumination from a free-electron laser, we use the higher sensitivity to free charge carriers of far-infrared (THz) SNOM compared to mid-infrared SNOM and find evidence that the local conductivity of crystalline states depends on the switching process. This insight into the local switching of optical properties is essential for developing active nanophotonic devices.

The potential of chemical bonding to design crystallization and vitrification kinetics.

Controlling a state of material between its crystalline and glassy phase has fostered many real-world applications. Nevertheless, design rules for crystallization and vitrification kinetics still lack predictive power. Here, we identify stoichiometry trends for these processes in phase change materials, i.e. along the GeTe-GeSe, GeTe-SnTe, and GeTe-Sb2Te3 pseudo-binary lines employing a pump-probe laser setup and calorimetry. We discover a clear stoichiometry dependence of crystallization speed along a line connecting regions characterized by two fundamental bonding types, metallic and covalent bonding. Increasing covalency slows down crystallization by six orders of magnitude and promotes vitrification. The stoichiometry dependence is correlated with material properties, such as the optical properties of the crystalline phase and a bond indicator, the number of electrons shared between adjacent atoms. A quantum-chemical map explains these trends and provides a blueprint to design crystallization kinetics.

Uncovering ß-relaxations in amorphous phase-change materials.

Relaxation processes are decisive for many physical properties of amorphous materials. For amorphous phase-change materials (PCMs) used in nonvolatile memories, relaxation processes are, however, difficult to characterize because of the lack of bulk samples. Here, instead of bulk samples, we use powder mechanical spectroscopy for powder samples to detect the prominent excess wings-a characteristic feature of ß-relaxations-in a series of amorphous PCMs at temperatures below glass transitions. By contrast, ß-relaxations are vanishingly small in amorphous chalcogenides of similar composition, which lack the characteristic features of PCMs. This conclusion is corroborated upon crossing the border from PCMs to non-PCMs, where ß-relaxations drop substantially. Such a distinction implies that amorphous PCMs belong to a special kind of covalent glasses whose locally fast atomic motions are preserved even below the glass transitions. These findings suggest a correlation between ß-relaxation and crystallization kinetics of PCMs, which have technological implications for phase-change memory functionalities.

Switching between Crystallization from the Glassy and the Undercooled Liquid Phase in Phase Change Material Ge2 Sb2 Te5.

Controlling crystallization kinetics is key to overcome the temperature-time dilemma in phase change materials employed for data storage. While the amorphous phase must be preserved for more than 10 years at slightly above room temperature to ensure data integrity, it has to crystallize on a timescale of several nanoseconds following a moderate temperature increase to near 2/3 Tm to compete with other memory devices such as dynamic random access memory (DRAM). Here, a calorimetric demonstration that this striking variation in kinetics involves crystallization occurring either from the glassy or from the undercooled liquid state is provided. Measurements of crystallization kinetics of Ge2 Sb2 Te5 with heating rates spanning over six orders of magnitude reveal a fourfold decrease in Kissinger activation energy for crystallization upon the glass transition. This enables rapid crystallization above the glass transition temperature Tg . Moreover, highly unusual for glass-forming systems, crystallization at conventional heating rates is observed more than 50 °C below Tg , where the atomic mobility should be vanishingly small.

Advanced Optical Programming of Individual Meta-Atoms Beyond the Effective Medium Approach.

Nanometer-thick active metasurfaces (MSs) based on phase-change materials (PCMs) enable compact photonic components, offering adjustable functionalities for the manipulation of light, such as polarization filtering, lensing, and beam steering. Commonly, they feature multiple operation states by switching the whole PCM fully between two states of drastically different optical properties. Intermediate states of the PCM are also exploited to obtain gradual resonance shifts, which are usually uniform over the whole MS and described by effective medium response. For programmable MSs, however, the ability to selectively address and switch the PCM in individual meta-atoms is required. Here, simultaneous control of size, position, and crystallization depth of the switched phase-change material (PCM) volume within each meta-atom in a proof-of-principle MS consisting of a PCM-covered Al-nanorod antenna array is demonstrated. By modifying optical properties locally, amplitude and light phase can be programmed at the meta-atom scale. As this goes beyond previous effective medium concepts, it will enable small adaptive corrections to external aberrations and fabrication errors or multiple complex functionalities programmable on the same MS.