ABSTRACT
Spectrally selective materials are of great interest for optoelectronic devices in which wavelength-selectivity of the photoactive material is necessary for applications such as multi-junction solar cells, narrow-band photodetectors, transparent photovoltaics, and tailored emission sources. Achieving controlled transparency or opacity within multiple wavelength bands in the absorption, reflection, and transmission spectra are difficult to achieve in traditional semiconductors that typically absorb at all energies above their electronic band gap and is generally realized by the use of external bandpass filters. Here, we propose an alternate method for achieving spectral selectivity in optoelectronic thin films: the use of photonic band engineering within the absorbing region of a semiconductor in which resonant photonic bands are strongly coupled to the external reflectivity and transmission spectra. As a first step, we use optical simulations to systematically study the effect of material absorption on the properties of the photonic bands in a photonic crystal slab structure. We find that adding a weak loss to the materials model does not appreciably change the frequencies of the photonic bands but does reduce the quality factor of the associated photonic modes. Critically, the radiating photonic bands induce strong Fano resonance features in the transmission and reflection spectra, even in the presence of material absorption, due to coupling between the bands and external electromagnetic plane waves. These resonances can be tuned by adjusting the photonic crystal structural properties to induce spectral selectivity in the absorbing region of semiconductors. Lastly, we demonstrate this tuning method experimentally by fabricating a proof-of-principle photonic structure consisting of a self-assembled polystyrene bead monolayer infiltrated with PbS CQDs that displays both near-infrared absorption enhancement and visible transparency enhancement over a homogeneous control film, qualitatively matching predictions and showing promise for optoelectronic applications.
ABSTRACT
Colloidal quantum dots (CQDs), are a promising candidate material for realizing colored and semitransparent solar cells, due to their band gap tunability, near infrared responsivity and solution-based processing flexibility. CQD solar cells are typically comprised of several optically thin active and electrode layers that are optimized for their electrical properties; however, their spectral tunability beyond the absorption onset of the CQD layer itself has been relatively unexplored. In this study, we design, optimize and fabricate multicolored and transparent CQD devices by means of thin film interference engineering. We develop an optimization algorithm to produce devices with controlled color characteristics. We quantify the tradeoffs between attainable color or transparency and available photocurrent, calculate the effects of non-ideal interference patterns on apparent device color, and apply our optimization method to tandem solar cell design. Experimentally, we fabricate blue, green, yellow, red and semitransparent devices and achieve photocurrents ranging from 10 to 15.2 mA/cm2 for the colored devices. We demonstrate semitransparent devices with average visible transparencies ranging from 27% to 32%, which match our design simulation results. We discuss how our optimization method provides a general platform for custom-design of optoelectronic devices with arbitrary spectral profiles.
ABSTRACT
We report on the significant performance enhancement of SnO2 thin film ultraviolet (UV) photodetectors (PDs) through incorporation of CuO/SnO2p-n nanoscale heterojunctions. The nanoheterojunctions are self-assembled by sputtering Cu clusters that oxidize in ambient to form CuO. We attribute the performance improvements to enhanced UV absorption, demonstrated both experimentally and using optical simulations, and electron transfer facilitated by the nanoheterojunctions. The peak responsivity of the PDs at a bias of 0.2 V improved from 1.9 A/W in a SnO2-only device to 10.3 A/W after CuO deposition. The wavelength-dependent photocurrent-to-dark current ratio was estimated to be ~ 592 for the CuO/SnO2 PD at 290 nm. The morphology, distribution of nanoparticles, and optical properties of the CuO/SnO2 heterostructured thin films are also investigated.
