A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks.

In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. Devices with a gate dielectric that consists of pure Pb(Zr,Ti)O3 (PZT) and a composite PZT/Al2O3 bilayer are studied. Two different mechanisms, charge trapping and generation of traps, both contribute to the degradation. We have observed positive threshold voltage shift in both kinds of devices under positive gate bias stress. In the devices with a PZT gate oxide, we have found the degradation is owing to electron trapping in pre-existing oxide traps. However, the degradation is caused by electron trapping in pre-existing oxide traps and the generation of traps for the devices with a composite PZT/Al2O3 gate oxide. Owing to the large difference in dielectric constants between PZT and Al2O3, the strong electric field in the Al2O3 interlayer makes PZT/Al2O3 GaN HEMT easier to degrade. In addition, the ferroelectricity in PZT enhances the electric field in Al2O3 interlayer and leads to more severe degradation. According to this study, it is worth noting that the reliability problem of the ferroelectric gate GaN HEMT may be more severe than the conventional metal-insulator-semiconductor HEMT (MIS-HEMT).

Progress in ZnO Nanosensors.

Developing various nanosensors with superior performance for accurate and sensitive detection of some physical signals is essential for advances in electronic systems. Zinc oxide (ZnO) is a unique semiconductor material with wide bandgap (3.37 eV) and high exciton binding energy (60 meV) at room temperature. ZnO nanostructures have been investigated extensively for possible use as high-performance sensors, due to their excellent optical, piezoelectric and electrochemical properties, as well as the large surface area. In this review, we primarily introduce the morphology and major synthetic methods of ZnO nanomaterials, with a brief discussion of the advantages and weaknesses of each method. Then, we mainly focus on the recent progress in ZnO nanosensors according to the functional classification, including pressure sensor, gas sensor, photoelectric sensor, biosensor and temperature sensor. We provide a comprehensive analysis of the research status and constraints for the development of ZnO nanosensor in each category. Finally, the challenges and future research directions of nanosensors based on ZnO are prospected and summarized. It is of profound significance to research ZnO nanosensors in depth, which will promote the development of artificial intelligence, medical and health, as well as industrial, production.

Piezoelectric Effect Tuning on ZnO Microwire Whispering-Gallery Mode Lasing.

We report a dynamic tuning on coherent light emission wavelengths of single ZnO microwire by using the piezoelectric effect. Owing to the dominant role occupied by the piezoelectric polarization effect in the wurtzite-structure ZnO microwire, the effective dielectric constant (or refraction index) of the gain media was modulated toward an increasing trend by applying a tensile strain, resulting in a shift of the strain-mediated whispering-gallery mode (WGM) lasing at room temperature. Also, the strain required to resolve the spectra in the two operating types of PL and lasing were systematically analyzed and compared. Because of the narrow line width in the lasing mode, the strain-dependent spectral resolution was improved by an order of magnitude, making it feasible for achieving high-precision, ultrasensitive, and noncontact stress sensing. Our results have an important impact on laser modulation, optical communication, and optical sensing technology.

A Highly Stretchable Transparent Self-Powered Triboelectric Tactile Sensor with Metallized Nanofibers for Wearable Electronics.

Recently, the quest for new highly stretchable transparent tactile sensors with large-scale integration and rapid response time continues to be a great impetus to research efforts to expand the promising applications in human-machine interactions, artificial electronic skins, and smart wearable equipment. Here, a self-powered, highly stretchable, and transparent triboelectric tactile sensor with patterned Ag-nanofiber electrodes for detecting and spatially mapping trajectory profiles is reported. The Ag-nanofiber electrodes demonstrate high transparency (>70%), low sheet resistance (1.68-11.1 Ω â–¡-1 ), excellent stretchability, and stability (>100% strain). Based on the electrode patterning and device design, an 8 × 8 triboelectric sensor matrix is fabricated, which works well under high strain owing to the effect of the electrostatic induction. Using cross-locating technology, the device can execute more rapid tactile mapping, with a response time of 70 ms. In addition, the object being detected can be made from any commonly used materials or can even be human hands, indicating that this device has widespread potential in tactile sensing and touchpad technology applications.

Full Dynamic-Range Pressure Sensor Matrix Based on Optical and Electrical Dual-Mode Sensing.

A pressure-sensor matrix (PSM) with full dynamic range can accurately detect and spatially map pressure profiles. A 100 × 100 large-scale PSM gives both electrical and optical signals by itself without applying an external power source. The device represents a major step toward digital imaging, and the visible display of the pressure distribution covers a large dynamic range.

Progress in piezo-phototronic effect modulated photovoltaics.

Wurtzite structured materials, like ZnO, GaN, CdS, and InN, simultaneously possess semiconductor and piezoelectric properties. The inner-crystal piezopotential induced by external strain can effectively tune/control the carrier generation, transport and separation/combination processes at the metal-semiconductor contact or p-n junction, which is called the piezo-phototronic effect. This effect can efficiently enhance the performance of photovoltaic devices based on piezoelectric semiconductor materials by utilizing the piezo-polarization charges at the junction induced by straining, which can modulate the energy band of the piezoelectric material and then accelerate or prevent the separation process of the photon-generated electrons and vacancies. This paper introduces the fundamental physics principles of the piezo-phototronic effect, and reviews recent progress in piezo-phototronic effect enhanced solar cells, including solar cells based on semiconductor nanowire, organic/inorganic materials, quantum dots, and perovskite. The piezo-phototronic effect is suggested as a suitable basis for the development of an innovative method to enhance the performance of solar cells based on piezoelectric semiconductors by applied extrinsic strains, which might be appropriate for fundamental research and potential applications in various areas of optoelectronics.