ABSTRACT
With the emergence of high-repetition-rate few-cycle laser pulse amplifiers aimed at investigating ultrafast dynamics in atomic, molecular, and solid-state science, the need for ever faster carrier-envelope phase (CEP) detection and control has arisen. Here we demonstrate a high-speed, continuous, every-single-shot measurement and fast feedback scheme based on a stereo above-threshold ionization time-of-flight spectrometer capable of detecting the CEP and pulse duration at a repetition rate of up to 400 kHz. This scheme is applied to a 100 kHz optical parametric chirped pulse amplification few-cycle laser system, demonstrating improved CEP stabilization and allowing for CEP tagging.
ABSTRACT
The pulse lengths of intense few-cycle (4-10 fs) laser pulses at 790 nm are determined in real-time using a stereographic above-threshold ionization (ATI) measurement of Xe, i.e. the same apparatus recently shown to provide a precise, real-time, every-single-shot, carrier-envelope phase measurement of ultrashort laser pulses. The pulse length is calibrated using spectral-phase interferometry for direct electric-field reconstruction (SPIDER) and roughly agrees with calculations done using quantitative rescattering theory (QRS). This stereo-ATI technique provides the information necessary to characterize the waveform of every pulse in a kHz pulse train, within the Gaussian pulse approximation, and relies upon no theoretical assumptions. Moreover, the real-time display is a highly effective tool for tuning and monitoring ultrashort pulse characteristics.
Subject(s)
Equipment Failure Analysis/instrumentation , Lasers , Photometry/instrumentation , Signal Processing, Computer-Assisted/instrumentation , Computer Systems , Equipment Design , IonsABSTRACT
In this Letter we demonstrate a method for real-time determination of the carrier-envelope phase of each and every single ultrashort laser pulse at kilohertz repetition rates. The technique expands upon the recent work of Wittmann and incorporates a stereographic above-threshold laser-induced ionization measurement and electronics optimized to produce a signal corresponding to the carrier-envelope phase within microseconds of the laser interaction, thereby facilitating data-tagging and feedback applications. We achieve a precision of 113 mrad (6.5°) over the entire 2π range.