Toward Humidity-Independent Sensitive and Fast Response Temperature Sensors Based on Reduced Graphene Oxide/Poly(vinyl alcohol) Nanocomposites.

Flexible temperature sensors are becoming increasingly important these days. In this work, we explore graphene oxide (GO)/poly(vinyl alcohol) (PVA) nanocomposites for potential application in temperature sensors. The influence of the mixing ratio of both materials, the reduction temperature, and passivation on the sensing performance has been investigated. Various spectroscopic techniques revealed the composite structure and atomic composition. These were complemented by semiempirical quantum chemical calculations to investigate rGO and PVA interaction. Scanning electron and atomic force microscopy measurements were carried out to evaluate dispersion and coated film quality. The temperature sensitivity has been evaluated for several composite materials with different compositions in the range from 10 to 80 °C. The results show that a linear temperature behavior can be realized based on rGO/PVA composites with temperature coefficients of resistance (TCR) larger than 1.8% K-1 and a fast response time of 0.3 s with minimal hysteresis. Furthermore, humidity influence has been investigated in the range from 10% to 80%, and a minor effect is shown. Therefore, we can conclude that rGO/PVA composites have a high potential for excellent passivation-free, humidity-independent, sensitive, and fast response temperature sensors for various applications. The GO reduction is tunable, and PVA improves the rGO/PVA sensor performance by increasing the tunneling effect and band gap energy, consequently improving temperature sensitivity. Additionally, PVA exhibits minimal water absorption, reducing the humidity sensitivity. rGO/PVA maintains its temperature sensitivity during and after several mechanical deformations.

Tunable Localized Charge Transfer Excitons in Nanoplatelet-2D Chalcogenide van der Waals Heterostructures.

Observation of interlayer, charge transfer (CT) excitons in van der Waals heterostructures (vdWHs) based on 2D-2D systems has been well investigated. While conceptually interesting, these charge transfer excitons are highly delocalized and spatially localizing them requires twisting layers at very specific angles. This issue of localizing the CT excitons can be overcome via making nanoplate-2D material heterostructures (N2DHs) where one of the components is a spatially quantum confined medium. Here, we demonstrate the formation of CT excitons in a mixed dimensional system comprising MoSe2 and WSe2 monolayers and CdSe/CdS-based core/shell nanoplates (NPLs). Spectral signatures of CT excitons in our N2DHs were resolved locally at the 2D/single-NPL heterointerface using tip-enhanced photoluminescence (TEPL) at room temperature. By varying both the 2D material and the shell thickness of the NPLs and applying an out-of-plane electric field, the exciton resonance energy was tuned by up to 100 meV. Our finding is a significant step toward the realization of highly tunable N2DH-based next-generation photonic devices.

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Enhanced photoconductivity of hybrid 2D-QD MoS2-AgInS2 structures.

This study describes the fabrication of hybrid two-dimensional (2D)-quantum dot (QD) MoS2-AgInS2 photoconductive devices through the mechanical pressing of a MoS2 flake onto an AgInS2 QD film. The devices exhibit an enhanced photoresponse at both continuous and modulated optical excitations, compared with the bare MoS2 or AgInS2 layer, due to the formation of a built-in electric field near the MoS2/AgInS2 interface. The continuous wave photoresponse is significantly higher due to the effective photoconductive gain when electrons flow freely through the MoS2 flake, whereas holes are effectively trapped in AgInS2 QDs. The study highlights the potential of hybrid 2D-QD MoS2-AgInS2 devices for photovoltaic and optoelectronic applications.

Exciton tuning in monolayer WSe2 via substrate induced electron doping.

We report large exciton tuning in WSe2 monolayers via substrate induced non-degenerate doping. We observe a redshift of ∼62 meV for the A exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe2 is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to dielectric substrates such as hBN and SiO2. As the evidence of doping from HOPG to WSe2, a drastic increase of the intensity ratio of trions to neutral excitons was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe2/HOPG, WSe2/hBN, and WSe2/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe2, which plays a central role in the fundamental understanding and further device development.

Plasmon-enhanced Raman spectroscopy of two-dimensional semiconductors.

Two-dimensional (2D) semiconductors have grown fast into an extraordinary research field due to their unique physical properties compared to other semiconducting materials. The class of materials proved extremely fertile for both fundamental studies and a wide range of applications from electronics/spintronics/optoelectronics to photocatalysis and CO2reduction. 2D materials are highly confined in the out-of-plane direction and often possess very good environmental stability. Therefore, they have also become a popular material system for the manipulation of optoelectronic properties via numerous external parameters. Being a versatile characterization technique, Raman spectroscopy is used extensively to study and characterize various physical properties of 2D materials. However, weak signals and low spatial resolution hinder its application in more advanced systems where decoding local information plays an important role in advancing our understanding of these materials for nanotechnology applications. In this regard, plasmon-enhanced Raman spectroscopy has been introduced in recent time to investigate local heterogeneous information of 2D semiconductors. In this review, we summarize the recent progress of plasmon-enhanced Raman spectroscopy of 2D semiconductors. We discuss the current state-of-art and provide future perspectives on this specific branch of Raman spectroscopy applied to 2D semiconductors.

High-Density, Localized Quantum Emitters in Strained 2D Semiconductors.

Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect- and strain-induced single-photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach for creating large areas of localized emitters with high density (∼150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters will be applied to scalable, tunable, and versatile quantum light sources.

Conversion of 2-dimensional GaSe to 2-dimensionalß-Ga2O3by thermal oxidation.

We demonstrate the conversion to quasi two-dimensional (2D)ß-Ga2O3by thermally oxidizing layered GaSe of different thicknesses (from bilayer to 100 nm). GaSe flakes were prepared by mechanical exfoliation onto Si with a 300 nm SiO2layer, highly oriented pyrolytic graphite, and mica substrates. The flakes were then annealed in ambient atmosphere at different temperatures ranging from 600 °C to 1000 °C for 30 min. Raman spectroscopy confirmed the formation ofß-Ga2O3in the annealed samples by comparison with the Raman spectrum of aß-Ga2O3reference crystal. Atomic force microscopy was employed to study the morphology and the thickness of theß-Ga2O3flakes. In addition, we used energy dispersive x-ray spectroscopy together with scanning electron microscopy to investigate the evolution of the composition, especially Se residuals, and the sample topography with annealing temperature.ß-Ga2O3appears at temperatures above 600 °C and Se is completely evaporated at temperatures higher than 700 °C. The thicknesses of the resultingß-Ga2O3flakes are half of that of the initial GaSe flake. Here we therefore present a straightforward way to prepare 2Dß-Ga2O3by annealing 2D GaSe.

Understanding the Role of Different Substrate Geometries for Achieving Optimum Tip-Enhanced Raman Scattering Sensitivity.

Tip-enhanced Raman spectroscopy (TERS) has experienced tremendous progress over the last two decades. Despite detecting single molecules and achieving sub-nanometer spatial resolution, attaining high TERS sensitivity is still a challenging task due to low reproducibility of tip fabrication, especially regarding very sharp tip apices. Here, we present an approach for achieving strong TERS sensitivity via a systematic study of the near-field enhancement properties in the so-called gap-mode TERS configurations using the combination of finite element method (FEM) simulations and TERS experiments. In the simulation study, a gold tip apex is fixed at 80 nm of diameter, and the substrate consists of 20 nm high gold nanodiscs with diameter varying from 5 nm to 120 nm placed on a flat extended gold substrate. The local electric field distributions are computed in the spectral range from 500 nm to 800 nm with the tip placed both at the center and the edge of the gold nanostructure. The model is then compared with the typical gap-mode TERS configuration, in which a tip of varying diameter from 2 nm to 160 nm is placed in the proximity of a gold thin film. Our simulations show that the tip-nanodisc combined system provides much improved TERS sensitivity compared to the conventional gap-mode TERS configuration. We find that for the same tip diameter, the spatial resolution achieved in the tip-nanodisc model is much better than that observed in the conventional gap-mode TERS, which requires a very sharp metal tip to achieve the same spatial resolution on an extended metal substrate. Finally, TERS experiments are conducted on gold nanodisc arrays using home-built gold tips to validate our simulation results. Our simulations provide a guide for designing and realization of both high-spatial resolution and strong TERS intensity in future TERS experiments.

The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering.

Since the first report in the early 2000s, there have been several experimental configurations that have demonstrated enhancement and spatial resolution of tip-enhanced Raman spectroscopy (TERS). The combination of a plasmonic substrate and a metallic tip is one suitable approach to achieve even higher enhancement and lateral resolution. In this contribution, we demonstrate TERS on a monolayer of MoS2 on an array of Au nanodisks. The Au nanodisks were prepared by electron beam writing. Thereafter, MoS2 was transferred onto the plasmonic substrate via the exfoliation technique. We witness an unprecedented enhancement and spatial resolution in the experiments. In the TERS image a ring-like shape is observed that matches the edges of the nanodisks. TERS enhancement at the edges is about 170 times stronger than at the center of the nanodisks. For a better understanding of the experimental results, finite element method (FEM) simulations were employed to simulate the TERS image of the MoS2/plasmonic heterostructure. Our calculations show a higher electric field concentration at the edges that exponentially decays to the center. Therefore, it reproduces the ring-like shape of the experimental image. Moreover, the calculations suggest a TERS enhancement of 135 at the edges compared to the center, which is in very good agreement with the experimental data. According to our calculations, the spatial resolution is also increased at the edges. For comparison, FEM simulations of a tip-flat metal substrate system (conventional gap-mode TERS) were carried out. The calculations confirmed a 110 times stronger enhancement at the edges of the nanodisks than that of conventional gap-mode TERS and explained the experimental maps. Our results provide not only a deeper understanding of the TERS mechanism of this heterostructure, but can also help in realizing highly efficient TERS experiments using similar systems.

Humidity Sensing Behavior of Endohedral Li-Doped and Undoped SWCNT/SDBS Composite Films.

We have investigated single-walled carbon nanotube (SWCNT) networks wrapped with the cationic surfactant sodium dodecyl-benzenesulfonate (SBDS) as promising candidates for water detection. This is the first time that the humidity behavior of endohedral Li-doped (Li@) and undoped SWCNTs/SDBS has been shown. We identified a strong and almost monotonic decrease in resistance as humidity increased from 11 to 97%. Sensitivities varied between -3 and 65% in the entire humidity range. Electrical characterization, Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM) analysis revealed that a combination of the electron donor behavior of the water molecules with Poole-Frenkel conduction accounted for the resistive humidity response in the Li@SWCNT/SDBS and undoped SWCNT/SDBS networks. We found that Li@SWCNTs boosted the semiconducting character in mixtures of metallic/semiconducting SWCNT beams. Moreover, electrical characterization of the sensor suggested that endohedral Li doping produced SWCNT beams with high concentration of semiconducting tubes. We also investigated how frequency influenced film humidity sensing behavior and how this behavior of SWCNT/SDBS films depended on temperature from 20 to 80 ° C. The present results will certainly aid design and optimization of SWCNT films with different dopants for humidity or gas sensing in general.

Probing interlayer excitons in a vertical van der Waals p-n junction using a scanning probe microscopy technique.

Two dimensional (2D) semiconductors feature exceptional optoelectronic properties controlled by strong confinement in one dimension. In this contribution, we studied interlayer excitons in a vertical p-n junction made of bilayer n-type MoS2 and few layers of p-type GaSe using current sensing atomic force microscopy (CSAFM). The p-n interface is prepared by mechanical exfoliation onto highly ordered pyrolytic graphite (HOPG). Thus the heterostructure creates an ideal layered system with HOPG serving as the bottom contact for the electrical characterization. Home-built Au tips are used as the top contact in CSAFM mode. During the basic diode characterization, the p-n interface shows strong rectification behavior with a rectification ratio of 104 at ±1 V. The I-V characteristics reveal pronounced photovoltaic effects with a fill factor of 0.55 by an excitation below the band gap. This phenomenon can be explained by the dissociation of interlayer excitons at the interface. The possibility of the interlayer exciton formation is indicated by density functional theory (DFT) calculations on this heterostructure: the valence band of GaSe and the conduction band of MoS2 contribute to an interface-specific state at an energy of about 1.5 eV. The proof of excitonic transitions to that state is provided by photoluminescence measurements at the p-n interface. Finally, photocurrent mapping at the interface under an excitation wavelength of 785 nm provides evidence of efficient extraction of such excitons. Our results demonstrate a pathway towards a 2D device for future optoelectronics and light harvesting assisted by interlayer excitons in a van der Waals (vdW) heterostructure.

Giant gap-plasmon tip-enhanced Raman scattering of MoS2 monolayers on Au nanocluster arrays.

In this article, we present the results of a gap-plasmon tip-enhanced Raman scattering study of MoS2 monolayers deposited on a periodic array of Au nanostructures on a silicon substrate forming a two dimensional (2D) crystal/plasmonic heterostructure. We observe a giant Raman enhancement of the phonon modes in the MoS2 monolayer located in the plasmonic gap between the Au tip apex and Au nanoclusters. Tip-enhanced Raman mapping allows us to determine the gap-plasmon field distribution responsible for the formation of hot spots. These hot spots provide an unprecedented giant Raman enhancement of 5.6 × 108 and a spatial resolution as small as 2.3 nm under ambient conditions. Moreover, due to strong hot electron doping in the order of 1.8 × 1013 cm-2, we observe a structural change of MoS2 from the 2H to the 1T phase. Owing to the very good spatial resolution, we are able to spatially resolve those doping sites. To the best of our knowledge, this is the first time reporting of such a phenomenon with nm spatial resolution. Our results will open the perspectives of optical diagnostics with nanometer resolution for many other 2D materials.

Highly Localized Strain in a MoS2/Au Heterostructure Revealed by Tip-Enhanced Raman Spectroscopy.

Tip-enhanced Raman spectroscopy (TERS) has been rapidly improved over the past decade and opened up opportunities to study phonon properties of materials at the nanometer scale. In this Letter, we report on TERS of an ultrathin MoS2 flake on a nanostructured Au on silicon surface forming a two-dimensional (2D) crystal/plasmonic heterostructure. Au nanostructures (shaped in triangles) are prepared by nanosphere lithography, and then MoS2 is mechanically exfoliated on top of them. The TERS spectra acquired under resonance conditions at 638 nm excitation wavelength evidence strain changes spatially localized to regions as small as 25 nm in TERS imaging. We observe the highest Raman intensity enhancement for MoS2 on top of Au nanotriangles due to the strong electromagnetic confinement between the tip and a single triangle. Our results enable us to determine the local strain in MoS2 induced during heterostructure formation. The maximum frequency shift of E2g mode is determined to be (4.2 ± 0.8) cm-1, corresponding to 1.4% of biaxial strain induced in the MoS2 layer. We find that the regions of maximum local strain correspond to the regions of maximum topographic curvature as extracted from atomic force microscopy measurements. This tip-enhanced Raman spectroscopy study allows us to determine the built-in strain that arises when 2D materials interact with other nanostructures.