ABSTRACT
Probing triplet transport in singlet fission materials can be challenging due to the presence of multiple diffusing species. We present a device-based method to measure the intrinsic triplet diffusion length (LD) in organic semiconductor thin films exhibiting singlet fission. Triplet states are optically injected into the singlet fission material of interest via energy transfer from an adjacent thin film characterized by strong spin-orbit coupling. Injected triplets migrate through the full thickness of the material before undergoing dissociation at a donor-acceptor interface. By modeling the ratio of injector and acceptor photocurrent as a function of layer thickness, the triplet LD is extracted separate from processes of unknown efficiency including singlet fission and diffusion. In considering three archetypical fission systems, a wide range is found for the triplet LD, ranging from 3.3 ± 0.4 nm for 5,12-bis((triisopropylsilyl)ethynyl)tetracene to 17.1 ± 1.3 nm for pentacene and 32.1 ± 2.6 nm for tetracene.
