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1.
ACS Appl Mater Interfaces ; 15(14): 18391-18401, 2023 Apr 12.
Article in English | MEDLINE | ID: mdl-37010892

ABSTRACT

Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric-write magnetic-read memory devices. In ferromagnetic/ferroelectric heterostructures, the intertwined physical properties can be manipulated by an external perturbation, such as an electric field, temperature, or a magnetic field. Here, we demonstrate the remote-controlled tunability of these effects under visible, coherent, and polarized light. The combined surface and bulk magnetic study of domain-correlated Ni/BaTiO3 heterostructures reveals that the system shows strong sensitivity to the light illumination via the combined effect of piezoelectricity, ferroelectric polarization, spin imbalance, magnetostriction, and magnetoelectric coupling. A well-defined ferroelastic domain structure is fully transferred from a ferroelectric substrate to the magnetostrictive layer via interface strain transfer. The visible light illumination is used to manipulate the original ferromagnetic microstructure by the light-induced domain wall motion in ferroelectric substrates and consequently the domain wall motion in the ferromagnetic layer. Our findings mimic the attractive remote-controlled ferroelectric random-access memory write and magnetic random-access memory read application scenarios, hence facilitating a perspective for room temperature spintronic device applications.

2.
J Phys Condens Matter ; 33(41)2021 Aug 03.
Article in English | MEDLINE | ID: mdl-34266996

ABSTRACT

The present work reports polarization response and the effects ofac- &dc-fields on 30% Sn doped BaTiO3polycrystalline relaxor thin films as a function of temperature. Apart from the low temperature frequency dispersion in dielectric data, a frequency independent local maxima in dielectric constant and a concomitant peak in dielectric loss atT* ∼ 245 K is observed, which is unusual of bulk relaxor systems. BelowT*, dispersion in dielectric constant becomes quite evident showing signatures of non-ergodic behavior. Subsequently, the dielectric and polarization responses in ergodic (>T*) and non-ergodic (

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