Laser induced semiconductor-metal transition in a Quantum Well.

The possibility of Semiconductor-Metal Transition under the influence of intense Laser field in a quasi-two dimensional semiconducting system like Al(x)Ga(1-x)As/GaAs Quantum Well in the finite barrier model has been investigated by showing an abrupt change in diamagnetic susceptibility of donor at critical concentration, which can be controlled by the amplitude of Laser field, using variational principle.