Bio-Inspired Photosensory Artificial Synapse Based on Functionalized Tellurium Multiropes for Neuromorphic Computing.

Nanomaterials like graphene and transition metal dichalcogenides are being explored for developing artificial photosensory synapses with low-power optical plasticity and high retention time for practical nervous system implementation. However, few studies are conducted on Tellurium (Te)-based nanomaterials due to their direct and small bandgaps. This paper reports the superior photo-synaptic properties of covalently bonded Tellurium sulfur oxide (TeSOx ) and Tellurium selenium oxide (TeSeOx )nanomaterials, which are fabricated by incorporating S and Se atoms on the surface of Te multiropes using vapor deposition. Unlike pure Te multiropes, the TeSOx and TeSeOx multiropes exhibit controllable temporal dynamics under optical stimulation. For example, the TeSOx multirope-based transistor displays a photosensory synaptic response to UV light (λ = 365 nm). Furthermore, the TeSeOx multirope-based transistor exhibits photosensory synaptic responses to UV-vis light (λ = 365, 565, and 660 nm), reliable electrical performance, and a combination of both photodetector and optical artificial synaptic properties with a maximum responsivity of 1500 AW-1 to 365 nm UV light. This result is among the highest reported for Te-heterostructure-based devices, enabling optical artificial synaptic applications with low voltage spikes (1 V) and low light intensity (21 µW cm-2 ), potentially useful for optical neuromorphic computing.

Synthesis, Properties, and Application of Ultrathin and Flexible Tellurium Nanorope Films: Beyond Conventional 2D Materials.

Nanomaterials that can be easily processed into thin films are highly desirable for their wide range of applicability in electrical and optical devices. Currently, Te-based 2D materials are of interest because of their superior electrical properties compared to transition metal dichalcogenide materials. However, the large-scale manufacturing of these materials is challenging, impeding their commercialization. This paper reports on ultrathin, large-scale, and highly flexible Te and Te-metal nanorope films grown via low-power radiofrequency sputtering for a short period at 25 °C. Additionally, the feasibility of such films as transistor channels and flexible transparent conductive electrodes is discussed. A 20 nm thick Te-Ni-nanorope-channel-based transistor exhibits a high mobility (≈450 cm2 V-1 s-1 ) and on/off ratio (105 ), while 7 nm thick Te-W nanorope electrodes exhibit an extremely low haze (1.7%) and sheet resistance (30 Ω sq-1 ), and high transmittance (86.4%), work function (≈4.9 eV), and flexibility. Blue organic light-emitting diodes with 7 nm Te-W anodes exhibit significantly higher external quantum efficiencies (15.7%), lower turn-on voltages (3.2 V), and higher and more uniform viewing angles than indium-tin-oxide-based devices. The excellent mechanical flexibility and easy coating capability offered by Te nanoropes demonstrate their superiority over conventional nanomaterials and provide an effective outlet for multifunctional devices.

Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets.

2D nanomaterials have been actively utilized in non-volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D-stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re-writable, bistable, transparent, and flexible solution-processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single- or multi-component-based multilayers composed of positively charged GO (N-GO(+) or NS-GO(+)) with/without negatively charged GO(-) using layer-by-layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi-component active layer Au/[N-GO(+)/GO(-)]n /Al/PES shows higher ON/OFF ratio of ≈105 with switching voltage of -1.9 V and higher retention stability (≈104 s), whereas the device based on single component (Au/[N-GO(+)]n /Al/PES) shows ≈103 ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi-component-based device are attributed to a higher coating surface roughness. The Au/[N-GO(+)/GO(-)]n /Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈109 ) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO-based solutions. It is found that the devices containing MnO2 in the dielectric layer do not improve the ReRAM performance.

Layer-by-Layer Self-Assembled Graphene Multilayers as Pt-Free Alternative Counter Electrodes in Dye-Sensitized Solar Cells.

Low cost, charged, and large scale graphene multilayers fabricated from nitrogen-doped reduced graphene oxide N-rGO(+), nitrogen and sulfur codoped reduced graphene oxide NS-rGO(+), and undoped reduced graphene oxide rGO(-) were applied as alternative counter electrodes in dye-sensitized solar cells (DSSCs). The neat rGO-based counter electrodes were developed via two types of layer-by-layer (LBL) self-assembly (SA) methods: spin coating and spray coating methods. In the spin coating method, two sets of multilayer films were fabricated on poly(diallyldimethylammonium chloride) (PDDA)-coated fluorine-doped tin oxide (FTO) substrates using GO(-) combined with N-GO(+) followed by annealing and denoted as [rGO(-)/N-rGO(+)]n or with NS-GO(+) and denoted as [rGO(-)/NS-rGO(+)]n for counter electrodes in DSSCs. The DSSCs employing new types of counter electrodes exhibited ∼7.0% and ∼6.2% power conversion efficiency (PCE) based on ten bilayers of [rGO(-)/N-rGO(+)]10 and [rGO(-)/NS-rGO(+)]10, respectively. The DSSCs equipped with a blend of one bilayer of [rGO(-):N-rGO(+)] and [rGO(-):NS-rGO(+)] on PDDA-coated FTO substrates were prepared from a spray coating and showed ∼6.4% and ∼5.6% PCE, respectively. Thus, it was demonstrated that a combination of undoped, nitrogen-doped, and nitrogen and sulfur codoped reduced graphene oxides can be considered as potentially powerful Pt-free electrocatalysts and alternative electrodes in conventional photovoltaic devices.

Comprehensive Study on the Controlled Plasmon-Enhanced Photocatalytic Activity of Hybrid Au/ZnO Systems Mediated by Thermoresponsive Polymer Linkers.

Hybrid semiconductor/noble metal nanostructures coupled with responsive polymers were used to probe unique plasmon-mediated photocatalytic properties associated with swelling-shrinking transitions in polymer chains triggered by specific external stimuli. Poly(N-isopropylacrylamide) (PNIPAM) brushes were anchored on Au films by atom transfer radical polymerization and ZnO nanoparticles were immobilized on the PNIPAM layer to explore controlled photocatalytic activity. The plasmon-enhanced photocatalytic activity was dictated by two critical parameters, that is, grafting density and molecular weight of PNIPAM involved in Au film-PNIPAM-ZnO. The effect of the areal density of PNIPAM chains on the temperature-responsive UV light photocatalytic activities showed mutually antagonistic trends at two different temperatures. The performance at high density was higher above a lower critical solution temperature (LCST), that is, under contracted configuration, while the sample with low density showed higher activity below LCST, that is, extended configuration. Among all the cases explored, the UV light activity was highest for the sample with thin PNIPAM layer and high density above LCST. The visible light activity was induced only for thin PNIPAM layer and high density, and it was higher above LCST. The efficiency of photocatalytic decomposition of phenol pollutant was dramatically enhanced from 10% to 55% upon the increase in temperature under visible light illumination.

Systematic study on the sensitivity enhancement in graphene plasmonic sensors based on layer-by-layer self-assembled graphene oxide multilayers and their reduced analogues.

The use of graphene in conventional plasmonic devices was suggested by several theoretic research studies. However, the existing theoretic studies are not consistent with one another and the experimental studies are still at the initial stage. To reveal the role of graphenes on the plasmonic sensors, we deposited graphene oxide (GO) and reduced graphene oxide (rGO) thin films on Au films and their refractive index (RI) sensitivity was compared for the first time in SPR-based sensors. The deposition of GO bilayers with number of deposition L from 1 to 5 was carried out by alternative dipping of Au substrate in positively- and negatively charged GO solutions. The fabrication of layer-by-layer self-assembly of the graphene films was monitored in terms of the SPR angle shift. GO-deposited Au film was treated with hydrazine to reduce the GO. For the rGO-Au sample, 1 bilayer sample showed a higher RI sensitivity than bare Au film, whereas increasing the rGO film from 2 to 5 layers reduced the RI sensitivity. In the case of GO-deposited Au film, the 3 bilayer sample showed the highest sensitivity. The biomolecular sensing was also performed for the graphene multilayer systems using BSA and anti-BSA antibody.