High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm.

We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 microm. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 microm. The beam propagation parameter (M2) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.

Tunable, Single-frequency, Diode-pumped 2.3mum VECSEL.

We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical-external-cavity surface-emitting laser (VECSEL) at 2.3mum. Tunability of 70nm and a maximum single frequency output of 0.68W is demonstrated.

1.9- m and 2.0- m laser diode pumping of Cr(2+) :ZnSe and Cr(2+) :CdMnTe.

Efficient diode pumping at wavelengths of 1.9 and 2.0microm of a Cr(2+): ZnSe laser with an output power of 105 mW and a slope efficiency of 35% with respect to the absorbed pump power is presented. In addition, Cr(2+): CdMnTe has been laser diode pumped as well as operated in the continuous-wave regime, to the best of our knowledge for the first time.