Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses.

Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.

Direct Measurement of Crystal Growth Velocity in Epitaxial Phase-Change Material Thin Films.

Central to the use of Ge-Sb-Te based phase-change materials for data storage applications is their crystallization capability since it determines memory writing time. Although being intensively studied to identify intrinsic limits and develop strategies to enhance memory performance, the crystallization process in these materials is still not fully explored. Therefore, this study focuses on the determination of crystal growth dynamics in an epitaxial phase-change material thin film model system offering the advantage of high crystalline quality and application-relevant sizing. By introducing a method that combines time-resolved reflectivity measurements with high-resolution scanning transmission electron microscopy, crystal growth velocities upon fast cooling after single ns-laser pulse irradiation of the prototypical phase-change material Ge2Sb2Te5 are determined. As a result, an increase in crystal growth velocity from 0.4 to 1.7 m/s with increasing laser fluence is observed with a maximum rate of 1.7 m/s as the upper detectable limit of the studied material.

In situ observations of the reversible vacancy ordering process in van der Waals-bonded Ge-Sb-Te thin films and GeTe-Sb2Te3 superlattices.

Chalcogenide-based thin films are employed in data storage and memory technology whereas van der Waals-bonded layered chalcogenide heterostructures are considered to be a main contender for memory devices with low power consumption. The reduction of switching energy is due to the lowering of entropic losses governed by the restricted motion of atoms in one dimension within the crystalline states. The investigations of switching mechanisms in such superlattices have recently attracted much attention and the proposed models are still under debate. This is partially due to the lack of direct observation of atomic scale processes, which might occur in these chalcogenide systems. This work reports direct, nanoscale observations of the order-disorder processes in van der Waals bonded Ge-Sb-Te thin films and GeTe-Sb2Te3-based superlattices using in situ experiments inside an aberration-corrected transmission electron microscope. The findings reveal a reversible self-assembled reconfiguration of the structural order in these materials. This process is associated with the ordering of randomly distributed vacancies within the studied materials into ordered vacancy layers and with readjustment of the lattice plane distances within the newly formed layered structures, indicating the high flexibility of these layered chalcogenide-based systems. Thus, the ordering process results in the formation of vacancy-bonded building blocks intercalated within van der Waals-bonded units. Moreover, vacancy-bonded building blocks can be reconfigured to the initial structure under the influence of an electron beam, while in situ exposure of the recovered layers to a targeted electron beam leads to the reverse process. Overall, the outcomes provide new insights into local structure and switching mechanism in chalcogenide superlattices.

Ultrafast interfacial transformation from 2D- to 3D-bonded structures in layered Ge-Sb-Te thin films and heterostructures.

Two-dimensional van-der-Waals-bonded chalcogenide heterostructures have recently received a lot of attention due to promising applications in the fields of photonics, plasmonics and data storage. Of particular interest is the interfacial switching process inherent in these structures, which is assumed to occur locally at the van-der-Waals interfaces and thus represents an intracrystalline transition. However, detailed experimental studies on the underlying mechanism are still lacking. In this work, epitaxially grown thin films consisting of van-der-Waals-bonded Ge-Sb-Te and GeTe/Sb2Te3 based heterostructures are employed as a model system to investigate structural changes induced by a single ns-laser pulse. A combined approach using X-ray diffraction and advanced transmission electron microscopy is applied to study phase transitions within the Ge-Sb-Te-based thin films in detail. The results reveal ultrafast transitions from 2D-bonded layered structures to 3D-bonded structures via a transient molten phase. Moreover, the interface between the 2D- and 3D-bonded structures is well defined by a single van-der-Waals gap, suggesting that the transition can be controlled very precisely in its spatial extent by an appropriate choice of the laser fluence. Overall, the results of this work offer a new perspective on the switching mechanism in Ge-Sb-Te-based materials and demonstrate the potential of van-der-Waals-bonded Ge-Sb-Te compounds to be applied for novel phase-change memory concepts.

Detection of small bunches of ions using image charges.

A concept for detection of charged particles in a single fly-by, e.g. within an ion optical system for deterministic implantation, is presented. It is based on recording the image charge signal of ions moving through a detector, comprising a set of cylindrical electrodes. This work describes theoretical and practical aspects of image charge detection (ICD) and detector design and its application in the context of real time ion detection. It is shown how false positive detections are excluded reliably, although the signal-to-noise ratio is far too low for time-domain analysis. This is achieved by applying a signal threshold detection scheme in the frequency domain, which - complemented by the development of specialised low-noise preamplifier electronics - will be the key to developing single ion image charge detection for deterministic implantation.

Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures.

Metals with a wide range of melting points are deposited by electron beam evaporation under oblique deposition geometry on thermally oxidized Si substrates. During deposition the sample holder is cooled down to 77 K. It is observed that all obliquely deposited metals grow as tilted, high aspect ratio columns and hence with a similar morphology. A comparison of such columns with those deposited at room temperature (300 K) reveals that shadowing dominates the growth process for columns deposited at 77 K, while the impact of surface diffusion is significantly increased at elevated substrate temperatures. Furthermore, it is discussed how the incidence angle of the incoming particle flux and the substrate temperature affect the columnar tilt angles and the porosity of the sculptured thin films. Exemplarily for tilted Al columns deposited at 77 K and at 300 K, in-plane pole figure measurements are carried out. A tendency to form a biaxial texture as well as a change in the crystalline structure depending on the substrate temperature is found for those films.

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

Enhanced intrinsic fluorescence from carboxidized nano-sculptured thin films of silver and their application for label free dual detection of glycated hemoglobin.

Enhanced intrinsic fluorescence (~x103) from novel carboxidized nanosculptured thin films (CO-nSTFs) of silver is reported. The sources of intrinsic fluorescence, confirmed by X-ray photoelectron spectroscopy, are Ag2O grains and residual carbon formed on the outer layer of silver nSTFs when exposed to air, while the localized surface plasmons on silver nSTFs enhance this intrinsic fluorescence. The CO-nSTFs are optimized with respect to porosity for the maximum enhancement. A sensor developed by using the self-assembled monolayer technique on optimized CO-nSTF is used for the label free detection of glycated hemoglobin, performed by simultaneously using fluorescence imaging and spectroscopy. The specificity of the sensor is established from control experiments on hemoglobin. These novel nanorod like intrinsically fluorescent CO-nSTFs pose huge potential in label free biosensing, light sources, imaging and many more applications.

Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation.

The amorphous to crystalline phase transformation of Ge2Sb2Te5 (GST) films by UV nanosecond (ns) and femtosecond (fs) single laser pulse irradiation at the same wavelength is compared. Detailed structural information about the phase transformation is collected by x-ray diffraction and high resolution transmission electron microscopy (TEM). The threshold fluences to induce crystallization are determined for both pulse lengths. A large difference between ns and fs pulse irradiation was found regarding the grain size distribution and morphology of the crystallized films. For fs single pulse irradiated GST thin films, columnar grains with a diameter of 20 to 60 nm were obtained as evidenced by cross-sectional TEM analysis. The local atomic arrangement was investigated by high-resolution Cs-corrected scanning TEM. Neither tetrahedral nor off-octahedral positions of Ge-atoms could be observed in the largely defect-free grains. A high optical reflectivity contrast (~25%) between amorphous and completely crystallized GST films was achieved by fs laser irradiation induced at fluences between 13 and 16 mJ/cm(2) and by ns laser irradiation induced at fluences between 67 and 130 mJ/cm(2). Finally, the fluence dependent increase of the reflectivity is discussed in terms of each photon involved into the crystallization process for ns and fs pulses, respectively.

Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures.

Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous-crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature.

An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE.

Ion-beam assisted molecular-beam epitaxy was used for direct growth of epitaxial GaN thin films on super-polished 6H-SiC(0001) substrates. The GaN films with different film thicknesses were studied using reflection high energy electron diffraction, X-ray diffraction, cathodoluminescence and primarily aberration-corrected scanning transmission electron microscopy techniques. Special attention was devoted to the microstructural characterization of GaN thin films and the GaN-SiC interface on the atomic scale. The results show a variety of defect types in the GaN thin films and at the GaN-SiC interface. A high crystalline quality of the produced hexagonal GaN thin films was demonstrated. The gained results are discussed.

Highly sensitive and specific detection of E. coli by a SERS nanobiosensor chip utilizing metallic nanosculptured thin films.

A nanobiosensor chip, utilizing surface enhanced Raman spectroscopy (SERS) on nanosculptured thin films (nSTFs) of silver, was shown to detect Escherichia coli (E. coli) bacteria down to the concentration level of a single bacterium. The sensor utilizes highly enhanced plasmonic nSTFs of silver on a silicon platform for the enhancement of Raman bands as checked with adsorbed 4-aminothiophenol molecules. T-4 bacteriophages were immobilized on the aforementioned surface of the chip for the specific capture of target E. coli bacteria. To demonstrate that no significant non-specific immobilization of other bacteria occurs, three different, additional bacterial strains, Chromobacterium violaceum, Paracoccus denitrificans and Pseudomonas aeruginosa were used. Furthermore, experiments performed on an additional strain of E. coli to address the specificity and reusability of the sensor showed that the sensor operates for different strains of E. coli and is reusable. Time resolved phase contrast microscopy of the E. coli-T4 bacteriophage chip was performed to study its interaction with bacteria over time. Results showed that the present sensor performs a fast, accurate and stable detection of E. coli with ultra-small concentrations of bacteria down to the level of a single bacterium in 10 µl volume of the sample.

Ripple coarsening on ion beam-eroded surfaces.

The temporal evolution of ripple pattern on Ge, Si, Al 2 O 3, and SiO 2 by low-energy ion beam erosion with Xe (+) ions is studied. The experiments focus on the ripple dynamics in a fluence range from 1.1 × 10(17) cm(-2) to 1.3 × 10(19) cm(-2) at ion incidence angles of 65° and 75° and ion energies of 600 and 1,200 eV. At low fluences a short-wavelength ripple structure emerges on the surface that is superimposed and later on dominated by long wavelength structures for increasing fluences. The coarsening of short wavelength ripples depends on the material system and angle of incidence. These observations are associated with the influence of reflected primary ions and gradient-dependent sputtering. The investigations reveal that coarsening of the pattern is a universal behavior for all investigated materials, just at the earliest accessible stage of surface evolution.

SERS biosensor using metallic nano-sculptured thin films for the detection of endocrine disrupting compound biomarker vitellogenin.

A biosensor chip is developed for the detection of a protein biomarker of endocrine disrupting compounds, vitellogenin (Vg) in aquatic environment. The sensor chip is fabricated by immobilizing anti-Vg antibody on 4-Aminothiophenol (4-ATP) coated nanosculptured thin films (nSTFs) of silver on Si substrates. The biosensor is based on the SERS of 4-ATP, enhanced by the Ag nSTFs. Before the fabrication of the sensor, the performance of the enhancement is optimized with respect to the porosity of nSTFs. Further, the biosensor is developed on the nSTF with optimized enhancement. The SERS signals are recorded from the sensor chip for varying concentrations of Vg. A control experiment is performed on another similar protein Fetuin to confirm the specificity of the sensor. The repeatability and reusability of the sensor, along with its shelf life are also checked. The limit of detection of the sensor is found to be 5 pg mL −1 of Vg in PBS within our experimental window. Apart from high sensitivity, specificity and reusability, the present sensor provides additional advantages of miniaturization, requirement of very small volumes of the analyte solution (15 µL) and fast response as compared to conventional techniques e.g., ELISA, as its response time is less than 3 minutes.

Nanometer-resolved mechanical properties around GaN crystal surface steps.

The mechanical properties of surfaces and nanostructures deviate from their bulk counterparts due to surface stress and reduced dimensionality. Experimental indentation-based techniques present the challenge of measuring these effects, while avoiding artifacts caused by the measurement technique itself. We performed a molecular dynamics study to investigate the mechanical properties of a GaN step of only a few lattice constants step height and scrutinized its applicability to indentation experiments using a finite element approach (FEM). We show that the breakdown of half-space symmetry leads to an "artificial" reduction of the elastic properties of comparable lateral dimensions which overlays the effect of surface stress. Contact resonance atomic force microscopy (CR-AFM) was used to compare the simulation results with experiments.

Gold nanostructure matrices by diffraction mask-projection laser ablation: extension to previously inaccessible substrates.

Gold nanodot matrices made by diffraction mask-projection laser ablation (DiMPLA) are presented. The nanodots are well ordered and can be synthesized on so far not accessible substrates by virtue of intermediate thin AlO(x) layers deposited by pulsed-laser deposition (PLD). Investigations were made on the influence of layer thickness, roughness and type of substrate on the nanodots and their fabrication. It is shown that all of these parameters are crucial for the generation of nanodots on thin AlO(x) layers. The roughness of the layer and the substrate material determine whether the layer cracks upon laser patterning. The layer thickness, on the other hand, influences the size of gold nanodots on top. Extinction spectra show that the particle size is the dominant contribution that shifts the plasmon resonance peak.

Plasmonic activity of large-area gold nanodot arrays on arbitrary substrates.

Highly efficient fabrication of well-ordered, embedded gold nanodot matrices using diffraction mask projection laser ablation is demonstrated. These gold nanodot arrays are ideally generated onto sapphire substrates but do also form onto AlO(x) thin films, enabling the application to arbitrary bulk substrates. Well-ordered gold dots become embedded into the Al(2)O(3) substrate during the process, thus improving their mechanical stability, chemical inertness, and technological compliance. Such substrates may be useful, for example, to enhance solar-cell efficiency by surface plasmons or as convenient, biocompatible focusing elements in nearfield optical tweezers.

Silicon nanocolumns on nanosphere lithography templated substrates: effects of sphere size and substrate temperature.

Glancing angle ion beam sputter deposition was used to grow regular arrays of Si nanocolumns with a nominal height of 650 nm at room temperature on polystyrene nanospheres with sphere diameters between 260 nm and 3550 nm, and at elevated temperatures on SiO2 nanospheres with a sphere diameter of 360 nm. Top view and cross sectional scanning electron microscopy reveals that the Si nanocolumns resemble cylinder-like structures, terminated by a hemispherical cap. Diameter, height and inter-column-spacing are found to depend linearly on the nanosphere diameter, thus giving the possibility to grow arrays of vertical Si columns with distinct porosities. For the growth at elevated temperatures, it was found that while on non-patterned substrates diffusion effects lead to broadening and finally merging of initially separated nanocolumns, on nanosphere patterned substrates this broadening effect is only moderate. No merging of columns is observable in this case, but a decrease of the column height due to a temperature-driven inter-column densification.