Gelatin-decorated Graphene oxide: A nanocarrier for delivering pH-responsive drug for improving therapeutic efficacy against atherosclerotic plaque.

The progressive inflammatory disease atherosclerosis promotes myocardial infarction, stroke, and heart attack. Anti-inflammatory drugs treat severe atherosclerosis. They are inadequate bioavailability and cause adverse effects at higher doses. A new nanomaterial coupled pH-apperceptive drug delivery system for atherosclerotic plaque is outlined here. We have synthesized a Graphene Oxide-Gelatin-Atorvastatin (GO-Gel-ATR) nanodrug characterized by spectroscopic and imaging techniques. The encapsulation efficiency of GO-Gel-ATR (79.2%) in the loading process is observed to be better than GO-ATR (66.8%). The internal milieu of the plaque cells has a pH of 6.8. The GO-Gel-ATR displays sustained and cumulative release profile at pH 6.8 compared to ATR and GO-ATR. Our proposed nanocomposite demonstrated high cytocompatibility up to 100µg/mL in foam cells induced by Oxidized-Low Density Lipoprotein (Ox-LDL) and Lipopolysaccharides (LPS) compared to normal macrophages for 24 and 48 h. The uptake efficacy of the nanodrugs is shown to be enhanced in foam cells compared to normal macrophage. Oil red O staining of foam cells with and without drugs confirmed therapeutic efficacy. Foam cells treated with nanocomposite had more lipids efflux than ATR. The finding of the in-vitro study reveals that the GO-Gel-ATR nanocomposite carriers have the potential to deliver anti-atherosclerotic drugs effectively and inhibit atherosclerotic plaque progression.

Synergy between plasmonic nanocavities and random lasing modes: a tool to dequench plasmon quenched fluorophore emission.

Metal nanoparticles (NPs) can be employed to modify the emission level of a dye emitter by tailoring the spectral overlap of the optical gain and localized surface plasmon resonance (LSPR). In the case of plasmonic random lasers, tuning the spectral overlap by manipulating metal NPs changes the scattering properties of the system, which is crucial in random lasers (RLs). In order to overcome this drawback, the emitter gain spectrum across the LSPR is tuned by appropriately choosing various dye emitters. A system with Au nanoislands (NIs) randomly distributed on the surface of vertically aligned ZnO nanorods on a glass substrate coated with three different dye emitters has been employed to study the metal-gain interaction as a function of spectral overlap. It is observed that the photoluminescence is quenched in the presence of Au NIs for all the three dye emitters; however, the degree of quenching is found to be directly proportional to the extent of spectral overlap of the LSPR and the fluorophore emission spectrum, with the resonantly coupled systems exhibiting higher random lasing thresholds. However, a dequenching of the emission is observed under spectrally off-resonant conditions, leading to a lower threshold RL. The effect of tailoring of the metal-gain interaction on the coherent and incoherent intensity components of RL emission is studied to elucidate the contrasting results of photoluminescence and RL emission. As the optical gain shifts away from the LSPR peak, the RL emission is dominated by the coherent intensity. The speckle-like field distributions of the RL modes couple to the plasmonic nanocavities along with a reduced absorption loss for the off-resonant case, leading to an enhanced stimulated emission. Hence, a synergy between random laser modes, plasmonic nanocavities and optimum spectral overlap has been utilized as a tool to dequench the plasmon quenched fluorophore emission.

Superior white electroluminescent devices using nitrogen-doped carbon dots/TiO2nanorods heterostructures.

Nitrogen-doped carbon dots (NCDs), exhibiting strong yellow emission in aqueous solution and solid matrices, have been utilized for fabricating heterostructure white electroluminescence devices. These devices consist of nitrogen-doped carbon dots as an emissive layer sandwiched between an organic hole transport layer (PEDOT:PSS) and an array of rutile TiO2nanorods, acting as an electron transport layer. Under an applied forward bias of 5 V, the device exhibits broadband electroluminescence covering the wavelength range of 390-900 nm, resulting in pure white light emission characteristics at room temperature. The result demonstrates the successful fabrication of all solution-processed, low-cost, eco-friendly NCDs-based LEDs with CIE (Commission Internationale d'Éclairage) coordinate of (0.31, 0.34) and color rendering index (CRI) > 90, which are close to ideal white light emission characteristics. The device functionalities are achieved based on defect-related NIR emission from TiO2nanorods array and visible emission from nitrogen-doped carbon dots. This result paves a new opportunity to develop low-cost, solution-processed nitrogen-doped carbon dots based on warm White light emitting diodes with high CRI for large-area display and lighting applications.

CsPbI3/N-GQDs dual layer phosphor-converted white-LEDs with ultrahigh luminous efficiency and color rendering index.

Phosphor-converted LEDs or pc-LEDs, as a solid-state lighting source, are attractive for next-generation display technologies because of their energy savings, and green environmentally friendly nature. Recently, white LEDs are being produced commercially by coating blue LED (440-470 nm) chips with various yellow-emitting phosphors. However, the LEDs produced by this technique often exhibit high correlated color temperature (CCT) and low color rendering index (CRI) values, due to sufficient red spectral components not being present, and thus aren't suitable for commercial grade white illumination. To circumvent this drawback, our work reports for the first time the use of blue and green-emitting nitrogen-functionalized graphene quantum dots (GQDs) coupled with red-emitting CsPbI3NCs for phosphor-based LED applications. We deployed near-UV to visible excitable red-emitting perovskite CsPbI3nanocrystals which contribute toward the red spectral component, thus greatly improving the CRI of the LEDs. CsPbI3nanocrystals are optically excited by nitrogen-functionalized GQD with blue and green emissions in a remote double-layer phosphor stack technique. This double phosphor layer stacking greatly improves both the CRI and luminous efficiency of radiation (LER), which usually has a trade-off in previously reported phosphor stacks. A CCT of ∼5182 K providing daylight white tonality, with superior CRI (∼90%) and ultrahigh LER (∼250 lumens/watt) are reported, which are significantly higher than the established benchmarks.

Vacancy-Mediated Anomalous Emission Characteristics of Size-Confined Semiconducting CoTe2.

Transition-metal tellurides (TMTs) are promising materials for "post-graphene age" nanoelectronics and energy storage applications owing to their industry-standard compatibility, high electron mobility, large spin-orbit coupling (SOC), etc. However, tellurium (Te) having a larger ionic radius (Z = 52) and broader d-bands endows TMTs with semimetallic nature, restricting their application in photonic and optoelectronic domains. In this work, we report the optical properties of the quantum-confined semiconducting phase of cobalt ditelluride (CoTe2) for the first time, exhibiting excellent two-color band photoabsorption attributes covering the UV-visible and near-infrared regions. Furthermore, novel excitonic resonances (X) of size-varying CoTe2 nanocrystals and quantum dots (QDs) are indicated by their temperature-dependent emission characteristics, which are attributed to the splitting of band edge states via confinement. On the other hand, the sudden rupture of the large-area CoTe2 nanosheets via ultrasonication incorporates Co vacancy-mediated localized trap states within the band gap, which is attributed to the superior room-temperature photoluminescence (PL) quantum yield of QDs and further corroborated using Raman analysis and atomistic density functional theory (DFT) simulations. Most interestingly, the excitonic peak of CoTe2 QDs reveals a unique positive-to-negative thermal quenching transition phenomenon, owing to the thermal activation of nonradiative surface trap states. These results introduce an exciting approach for the defect-mediated color-saturated light emission that paves the way for solution-processed telluride-based QD light-emitting diodes.

Atomic-Scale Imaging and Nano-Scale Mapping of Cubic α-CsPbI3 Perovskite Nanocrystals for Inverted Perovskite Solar Cells.

Colloidal synthesized cubic α-CsPbI3 perovskite nanocrystals having a smaller lattice constant (a = 6.2315 Å) compared to the standard structure, and nanoscale mapping of their surfaces are reported to achieve superior photovoltaic performance under 45-55% humidity conditions. Atomic scale transmission electron microscopic images have been utilized to probe the precise arrangement of Cs, Pb, and I atoms in a unit cell of α-CsPbI3 NCs, which is well supported by the VESTA structure. Theoretical calculation using density functional theory of our experimental structure reveals the realization of direct band to band transition with a lower band gap, a higher absorption coefficient, and stronger covalent bonding between the Pb and I atoms in the [PbI6]4- octahedral, as compared to reported standard structure. Nanoscale surface mapping using Kelvin probe force microscopy yielding contact potential difference (CPD) and conductive atomic force microscopy for current mapping have been employed on α-CsPbI3 NCs films deposited on different DMSO doped PEDOT:PSS layers. The difference of CPD value under dark and light illumination suggests that the hole injection strongly depends on the interfaces with PEDOT:PSS layer. The carrier transport through grain interiors and grain boundaries in α-CsPbI3 probed by the single-point c-AFM measurements reveal the excellent photosensitivity under the light conditions. Finally, inverted perovskite solar cells, employing α-CsPbI3 NCs film as an absorber layer and PEDOT:PSS layer as a hole transport layer, have been optimized to achieve the highest power conversion efficiency of 10.6%, showing their potential for future earth abundant, low cost, and air stable inverted perovskite photovoltaic devices.

Plasmonic Silver Nanoparticle-Mediated Enhanced Broadband Photoresponse of Few-Layer Phosphorene/Si Vertical Heterojunctions.

We report the superior broadband photodetection characteristics of few-layer phosphorene known as black phosphorus (BP) nanosheets integrated with silver nanoparticles (Ag NPs) using vertical heterojunctions on a Si platform. The exfoliation of BP nanosheets and preparation of an Ag NP:BP (Ag-BP) hybrid have been accomplished through environment-friendly and cost-effective chemical routes. The hybrid sample exhibits broadband light absorption with a strong plasmonic peak around ∼425 nm due to the localized surface plasmon resonance (LSPR) of Ag NPs of average size ∼6.0 nm. Spectroscopic analysis of the Ag-BP hybrid ascertains strong light-matter interactions around the LSPR band of Ag NPs. The size-dependent optical response of BP nanostructure/Si state-of-the-art broadband (300-1600 nm) photodiodes has been studied extensively. The enhancement of broadband photoresponse characteristics is demonstrated using the plasmonic Ag-BP 0D-2D hybrid nanostructure compared to pristine BP, where the peak responsivity in the former is shifted to the visible region (∼440 nm) compared to UV response (∼340 nm) of the latter. The tunable spectral responsivity with a peak value of ∼3.2 A/W (@ ∼440 nm and -5 V) for the Ag-BP/Si heterojunction device demonstrates the potential of plasmonic BP hybrids for future nanophotonic devices.

2D WS2 embedded PVDF nanocomposites for photosensitive piezoelectric nanogenerators with a colossal energy conversion efficiency of ∼25.6.

Benefiting from the advantages of low cost, light weight and mechanical flexibility, piezoelectric nanogenerators have the potential for application in renewable energy harvesting from various unexplored sources. Here, we report the demonstration of the record efficiency of flexible piezoelectric nanogenerators (PENG) using composites of polyvinylidene fluoride (PVDF) and chemically exfoliated tungsten disulfide (WS2) nanosheets, which are found to be strongly photosensitive, making them attractive for self-powered optical devices. The presence of two-dimensional (2D) WS2 nanosheets in the PVDF matrix plays a dual role in enhancing the nucleation of the electroactive ß-phase as well as inducing strong photosensitivity in the nanocomposite. The PVDF-WS2 composed flexible device is able to produce an enormously high output voltage of ∼116 V (for an impact of 105 kPa) and a piezoelectric energy conversion efficiency of ∼25.6%, which is the highest among the reported values for PVDF-2D material based self-poled piezoelectric nanogenerators. This self-poled piezo-phototronic device exhibits strain-dependent photocurrent at zero bias and exhibits a responsivity of 6.98 × 10-3 A W-1 at 0.75% strain under the illumination of 410 nm. The fabricated PENG is also able to harvest energy from routine human activities (finger tapping, writing on paper, mouse clicking, etc.) and movement of human body parts. These results open up a new horizon in piezo-phototronic materials through the realization of photosensitive multifunctional PENGs, which can be scaled up for fabricating compact, high performance, portable and self-powered wearable electronic devices for smart sensor applications.

Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors.

A CMOS-compatible infrared (IR; 1200-1700 nm) detector based on Ge quantum dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) platform with a superior detectivity at room temperature is presented. The spectral response of a single nanowire device measured in a back-gated field-effect transistor geometry displays a very high value of peak detectivity ∼9.33 × 1011Jones at ∼1500 nm with a relatively low dark current (∼20 pA), which is attributed to the fully depleted Si nanowire channel on SOI substrates. The noise power spectrum of the devices exhibits a1/fγ,with the exponent,γshowing two different values of 0.9 and 1.8 owing to mobility fluctuations and generation-recombination of carriers, respectively. Ge QD-decorated nanowire devices exhibit a novel polarization anisotropy with a remarkably high photoconductive gain of ∼104. The superior performance of a Ge QDs/Si nanowire phototransistor in IR wavelengths is potentially attractive to integrate electro-optical devices into Si for on-chip optical communications.

Broadband infrared photodetector based on nanostructured MoSe2-Si heterojunction extended up to 2.5 µm spectral range.

Transition metal dichalcogenides (TMDs) and their heterojunctions are drawing immense research interest for various applications including infrared detection. They are being studied with different semiconductor materials to explore their heterojunction properties. In this regard, we report a MoSe2/Si heterojunction broadband photodiode which is highly sensitive for a wide spectral range from 405 nm to 2500 nm wavelength with the maximum responsivity of ∼522 mA W-1 for 1100 nm of incident light. The hydrothermal synthesis approach leads to the imperfect growth of the MoSe2, creating defects in the lattice, which was confirmed by x-ray photo-spectroscopy. These sub-bandgap defects caused high optical absorption of the SWIR light as observed in the absorption spectra. The speed of the device ranges to 18/10 µs for 10 kHz modulated light. Furthermore, the photodetector has been fully operational even at zero bias voltage, making it a potential contender for self-powered photodetection.

Solution-processed MoS2 quantum dot/GaAs vertical heterostructure based self-powered photodetectors with superior detectivity.

The characteristics of a novel 0D/3D heterojunction photodetector fabricated using solution-processed colloidal MoS2 quantum dots (QDs) on GaAs is presented. MoS2 QDs with a dimension of ∼2 nm, synthesized by a standard sono-chemical exfoliation process with 2D layers have been used for the purpose. The microscopic and spectroscopic studies confirmed the formation of semiconducting (2H phase) MoS2 QDs. The photodetectors were fabricated using n-GaAs substrates with two different doping concentrations resulting in n-n heterojunctions between n-type 0D MoS2 QDs and bulk n-GaAs. The devices fabricated using GaAs with a higher doping concentration, showed an increase in the reverse current of the order of ∼102 upon illumination, while the same with a lower doping concentration showed an increase of the order of ∼103. All the heterojunction photodetector devices show a broadband operation over the visible wavelength range of 400-950 nm, with a peak responsivity of the devices being observed at 500 nm. The peak responsivity and detectivity are found to be ∼400 mA W-1 and ∼4 × 1012 Jones, respectively, even without any external applied bias, which are useful for self-powered photodetection. The results indicate that colloidal MoS2/GaAs based hybrid heterostructures provide a platform for fabricating broadband photodetectors by using highly absorbing MoS2 QDs, which may show the pathway towards next-generation optoelectronic devices with superior detection properties.

Size-dependent optical properties of MoS2 nanoparticles and their photo-catalytic applications.

While two-dimensional (2D) layered MoS2 nanosheets have been extensively studied owing to their fascinating optoelectronic properties, less attention has been paid to the corresponding zero-dimensional nano-crystals. In this contribution, we report the efficacy of MoS2 nanocrystals for their size tunable properties for optical and photocatalytic applications. We have synthesized differently sized (10-70 nm) crystalline, hexagonal 2H-MoS2 nanoparticles (NPs) dispersed in DMF solvent using a simple exfoliation technique. Synthesized NPs are found to exhibit size-dependent optical properties and excitation-dependent fluorescence characteristics in the visible region, which are otherwise not observed in bulk or 2D MoS2 layers. Size tunable bandgap and broad absorbance and emission spectrum covering the visible range could be exploited in the fabrication of various opto-electronic devices. Charge carrier emission dynamics of differently sized MoS2 NPs are investigated using time correlated single photon counting (TCSPC) spectroscopic technique. We found two time components, one in the order of several hundreds of ps, which arises due to the radiative recombination of charge carriers, while the other one is of the order of a few ns, which emanates from the defect states of MoS2 NPs. The average time constants are found to decrease with increase in particle size. A noticeable photocatalytic activity of the synthesized MoS2 NPs under visible light illumination for the degradation of brilliant green dye is also demonstrated for the first time and the effect of size variation of NPs in the dye degradation process is reported.

Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si0.5Ge0.5/Si substrates using molecular beam epitaxy.

We report the optical characteristics of relatively large sized (∼7.0-8.0 µm) but low aspect ratio Ge microdisks grown on a virtual Si0.5Ge0.5 substrate using molecular beam epitaxy following the Stranski-Krastanov growth mechanism. Grown microdisks with very low aspect ratio Ge islands exhibit direct band gap (∼0.8 eV) photoluminescence emission sustainable up to room temperature, enabled by the confinement of carriers into the microdisks. p-i-n diodes with an intrinsic layer containing Ge microdisks have been fabricated to study their emission and photoresponse characteristics at an optical communication wavelength of ∼1550 nm. A strong electroluminescence at 1550 nm has been achieved at low temperatures in the device for a very low threshold current density of 2.56 µA cm-2 due to the strong confinement of injected holes. The emission characteristics of the fabricated device with respect to the injected current density and temperature have been studied. Novel emission and optical modulation characteristics at 1550 nm of the fabricated p-i-n device containing Ge microdisks grown on a virtual SiGe substrate indicate its potential for Si CMOS compatible on-chip optical communications.

Light Trapping-Mediated Room-Temperature Gas Sensing by Ordered ZnO Nano Structures Decorated with Plasmonic Au Nanoparticles.

An ordered array of 1D ZnO nanorods obtained by colloidal templating is shown to dramatically enhance the sensing response of NO x at room temperature by confining light and creating periodic structures. The sensitivity is measured for a concentration varying from 2 to 10 ppm (response 53% at 10 ppm) at room temperature under white light illumination with ≈225 nm hole diameter. In contrast, structures with ≈450 nm hole size show better sensing under (response 98% at 10 ppm) elevated temperatures in dark conditions, which is attributed to the increased surface chemical interactions with NO x molecules due to the porous nature and enhanced accessible surface area of ZnO nanorods. Further, the decoration of ZnO Nanorods with gold nanoparticles shows enhanced sensor performance (response 130% at 10 ppm) due to localized surface plasmon resonance under white light illumination. The findings may lead to new opportunities in the visible light-activated room-temperature NO x sensors for healthcare applications.

Surfactant-Induced Anion Exchange and Morphological Evolution for Composition-Controlled Caesium Lead Halide Perovskites with Tunable Optical Properties.

Environmentally stable lead halide perovskite nanostructures with engineered composition and morphology are attractive because of their exotic optical properties. Here, we report the synthesis of monodispersed (∼20 nm) CsPbI3 cubic perovskite nanocrystals (NCs) using edible olive oil as a solvent as well as a chelating reagent. Thereafter, bromide anion exchange reaction using the cetyl trimethyl ammonium bromide surfactant in hexane is carried out at relatively lower temperatures to synthesize caesium lead halide perovskites with variable halide compositions and tunable band gaps. Interestingly, because of the formation of micelles, continuous morphology evolution varying from NCs of different sizes to nanowires (NWs) and nanosheets is observed. The anion exchange temperature has a distinct effect on the morphology of the CsPbBr3 nanostructure and the anion exchange reaction rate. Finally, an easy solution-processed photoconductive device is demonstrated using as-grown CsPbBr3 NWs, indicating its potential for optoelectronic applications.

Photoresponse characteristics of MoS2 QDs/Si nanocone heterojunctions utilizing geometry controlled light trapping mechanism in black Si.

A unique light trapping mechanism associated with nano-conical textured black Si templates has been utilized to achieve improved photoresponse in MoS2QDs/Si heterojunctions over a wide wavelength range from visible to near infrared. Black Si templates have been fabricated by a simple and cost effective metal assisted chemical etching technique followed by spin-coating of colloidal MoS2 quantum dots (QDs) to form the heterojunction. A peak responsivity of as high as ∼1.39 A W-1 at ∼665 nm for a bias of 5 V has been achieved. The responsivity value is higher as compared to recently published results having similar device structure. The combination of MoS2 QDs and black Si has resulted in a broader spectral response with enhanced optical absorption in the nano-conical heterojunction devices. Finite element based optical simulation results revealed the superiority of MoS2 QDs/Si nano-conical heterojunctions due to improved light trapping. The results appear attractive for next generation Si CMOS compatible broad band photodetectors using two dimensional semiconductors.

Rapid growth of fully-inorganic flexible CaxCoO2 thin films from a ligand free aqueous precursor ink for thermoelectric applications.

We demonstrate a ligand-free green chemical method for the rapid growth of nanoporous Ca0.35CoO2 thin films on sapphire and mica substrates from a water-based precursor ink, formulated by dissolving the precursor solid, composed of in situ prepared Ca2+-DMF and Co2+-DMF complexes. Mica serves as the flexible substrate as well as the sacrificial layer for the film transfer. Despite the presence of nanopores, the power factor of the flexible film Ca0.35CoO2-on-mica is above 0.50 × 10-4 W m-1 K-2 at around room temperature. The present technique is simple and cost-effective.

Application of tungsten disulfide quantum dot-conjugated antimicrobial peptides in bio-imaging and antimicrobial therapy.

Two-dimensional (2D) tungsten disulfide (WS2) quantum dots offer numerous promising applications in materials and optoelectronic sciences. Additionally, the catalytic and photoluminescence properties of ultra-small WS2 nanoparticles are of potential interest in biomedical sciences. Addressing the use of WS2 in the context of infection, the present study describes the conjugation of two potent antimicrobial peptides with WS2 quantum dots, as well as the application of the resulting conjugates in antimicrobial therapy and bioimaging. In doing so, we determined the three-dimensional solution structure of the quantum dot-conjugated antimicrobial peptide by a series of high-resolution nuclear magnetic resonance (NMR) techniques, correlating this to the disruption of both model lipid and bacterial membranes, and to several key biological performances, including antimicrobial and anti-biofilm effects, as well as cell toxicity. The results demonstrate that particle conjugation enhances the antimicrobial and anti-biofilm potency of these peptides, effects inferred to be due to multi-dendate interactions for the conjugated peptides. As such, our study provides information on the mode-of-action of such conjugates, laying the foundation for their potential use in treatment and monitoring of infections.

MoSe2-Cu2S Vertical p-n Nanoheterostructures for High-Performance Photodetectors.

Heterostructures based on atomically thin two-dimensional layered transition metal dichalcogenides are highly promising for optoelectronic device applications owing to their tunable optical and electronic properties. However, the synthesis of heterostructures with desired materials having proper interfacial contacts has been a challenging task. Here, we develop a colloidal synthetic route for the design of MoSe2-Cu2S nanoheterostructures, where the Cu2S islands grow vertically on top of the defect sites present on the MoSe2 surface, thereby forming a vertical p-n junction having plasmonic characteristics. These MoSe2-Cu2S nanoheterostructures are used to fabricate photodetectors with superior photoresponse characteristics. The fabricated device exhibits a broad-band spectral photoresponse over the visible to near-infrared range with a peak responsivity of 410 mA W-1 at -2.0 V and over 3000-fold photo-to-dark current ratio. The superior device performance of MoSe2-Cu2S over only MoSe2 devices is due to the combined effect of the formation of the p-n junction, pronounced light-matter interactions, and passivation of surface defects. This study would pave the way for designing a new class of nanoheterostructured materials for their potential applications in next-generation photonic devices.

P-type ß-MoO2 nanostructures on n-Si by hydrogenation process: synthesis and application towards self-biased UV-visible photodetection.

We report on the synthesis and UV-vis photodetection application of p-type MoO2 nanostructures (NSs) on Si substrate. ß-MoO2 NSs have been synthesized from previously grown α-MoO3 structures/n-type Si via a hydrogenation process at 450 °C. After hydrogenation, the α-MoO3 structures were completely converted into ß-MoO2 NSs without the presence of sub-oxidized phases of molybdenum oxide. The as-grown NSs exhibited very good p-type electrical conductivity of ≈2.02 × 103 S-cm-1 with hole mobility of ≈7.8 ± 1.3 cm2-V-1-Sec-1. To explore optoelectronic properties of p-type ß-MoO2 NSs, we have fabricated a p-MoO2/n-Si heterojunction photodetector device with Au as the top and Al as the bottom contacts. The device exhibits peak photoresponsivity of ≈0.155 A W-1 with maximum detectivity ≈1.28 × 1011 cm-Hz1/2-W-1 and 44% external quantum efficiency around ≈436 nm, following the highest photoresponse (I ph/I d ≈ 6.4 × 102) and good response speed (rise time ∼29 ms and decay time ∼38 ms) at -1.5 V. Importantly, this device also shows good self-powered high-speed (rise time ∼47 ms and decay time ∼70 ms) photodetection performance with peak responsivity and detectivity of ≈45 mA W-1 and ≈4.05 × 1010 cm-Hz1/2-W-1, respectively. This broadband UV-visible light detection feature can be attributed to the coordinated effects of MoO2 band-edge absorption, interfacial defects and self absorption in Si. The photodetection behavior of the device has been understood by proposed energy-band diagrams with the help of an experimentally derived work function, band gap and valence band maximum position of MoO2 NSs.