Microstructuring to Improve the Thermal Stability of GeSn Layers.

Tin segregation in Ge1-xSnx alloys is one of the major problems potentially hindering the use of this material in devices. Ge1-xSnx microdisks fabricated from layers with Sn concentrations up to 16.9% underwent here annealing at temperatures as high as 400 °C for 20 min without Sn segregation, in contrast with the full segregation observed in the corresponding blanket layers annealed simultaneously. After annealing, no changes in the elemental composition of the microdisks were evidenced. An enhancement of the total integrated photoluminescence, with no modifications of the emission energy, was also observed. These findings show that microstructuring offers a completely new path in maintaining the stability of high Sn concentration Ge1-xSnx layers at temperatures much higher than those used for growth. This approach enables the use of thermal annealing processes to improve the properties of this alloy in optoelectronic devices (such as light emitting diodes, lasers, photodetectors, or modulators). It should also facilitate the integration of Ge1-xSnx into well-established technologies requiring medium temperature processes. The same strategy may help to prevent Sn segregation during high temperature processes in similar metastable alloys.

GeSnOI mid-infrared laser technology.

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge0.9Sn0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

Impact and behavior of Sn during the Ni/GeSn solid-state reaction.

Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results showed that, during the SSR, Sn was incorporated into the intermetallic phases. Sn segregation happened first around the grain boundaries (GBs) and then towards the surface. Sn accumulation around GBs hampered atom diffusion, delaying the growth of the Ni(GeSn) phase. Higher thermal budgets will thus be mandatory for formation of contacts in high-Sn-content photonic devices, which could be detrimental for thermal stability.

GeSn heterostructure micro-disk laser operating at 230 K.

We demonstrate lasing up to 230 K in a GeSn heterostructure micro-disk cavity. The GeSn 16.0% optically active layer was grown on a step-graded GeSn buffer, limiting the density of misfit dislocations. The lasing wavelengths shifted from 2720 to 2890 nm at 15 K up to 3200 nm at 230 K. Compared to results reported elsewhere, we attribute the increase in maximal lasing temperature to two factors: a stronger optical confinement by a thicker active layer and a better carrier confinement provided by a GeSn 13.8% / GeSn 16.0% / GeSn 13.8% double heterostructure.

Enhanced light extraction in ITO-free OLEDs using double-sided printed electrodes.

We show how nanoimprint lithographic techniques are particularly suited for the realization of OLED device structures. We tested them to realize nanopatterned metallic electrodes containing photonic crystals to couple the light out and plasmonic crystals showing extraordinary transmission. At similar current densities, a two-fold electroluminescence is achieved with devices having double-sided structured metallic electrodes as compared to a control OLED with an ITO anode. The use of combined nanoimprint lithography processes has the potential to expand the performance range of various organic optoelectronic devices.

Surface-directed dewetting of a block copolymer for fabricating highly uniform nanostructured microdroplets and concentric nanorings.

Through a combination of nanoimprint lithography and block copolymer self-assembly, a highly regular dewetting process of a symmetric diblock copolymer occurs whereby the hierarchal formation of microdroplets and concentric nanorings emerges. The process is driven by the unique chemical properties and geometrical layout of the underlying patterned silsesquioxane micrometer-sized templates. Given the presence of nonpreferential substrate-polymer interactions, directed dewetting was utilized to produce uniform arrays of microsized droplets of microphase separated polystyrene-block-poly(methyl methylacrylate) (PS-b-PMMA), following thermal annealing at 180 °C. Microdroplets with diameters greater than 400 nm exhibited a hexagonal close-packed arrangement of nanodots on the surface with polydomain ordering. At the droplet periphery, the polydomain ordering was severely disrupted because of a higher in-plane radius of curvature. By reducing the droplet size, the in-plane radius of curvature of the microdroplet becomes significant and the PMMA cylinders adopt parallel structures in this confined geometry. Continuous scaling of the droplet results in the generation of isolated, freestanding, self-aligned, and self-supported oblique nanorings (long axis ∼250-350 nm), which form as interstitial droplets between the larger microdroplets. Optical and magnetic-based nanostructures may benefit from such hierarchal organization and self-supporting/aligned nanoring templates by combining more than one lithography technique with different resolution capabilities.

Tuning the intensity of metal-enhanced fluorescence by engineering silver nanoparticle arrays.

It is demonstrated that silver nanoparticle (SNP) arrays fabricated by combining nanoimprint lithography and electrochemical deposition methods can be used as substrates for metal-enhanced fluorescence, which is widely used in optics, sensitive detection, and bioimaging. The method presented here is simple and efficient at controlling the nanoparticle density and interparticle distance within one array. Furthermore, it is found that the fluorescence intensity can be tuned by engineering the feature size of the SNP arrays. This is due to the different coupling efficiency between the emission of the fluorophores and surface plasmon resonance band of the metallic nanostructures.

Self-induced transverse mode selection in a photorefractive extended cavity laser diode.

Previous works on photorefractive self-organizing laser cavities were about lasers that oscillate, prior the self-organization process occurs, on a set of axial modes sharing the same transverse structure. In a well-designed broad-area laser diode extended cavity, we theoretically and experimentally demonstrate that the insertion of a photorefractive crystal can also affect the transverse modal structure to force the laser, initially oscillating on several transverse modes, to oscillate on a single transverse and axial mode. This spatial self-organization process leads to an enhancement of the single mode operating range of the laser.