A precise optical determination of nanoscale diameters of semiconductor nanowires.

Electrical and optical properties of semiconducting nanowires (NWs) strongly depend on their diameters. Therefore, a precise knowledge of their diameters is essential for any kind of device integration. Here, we present an optical method based on dark field optical microscopy to easily determine the diameters of individual NWs with an accuracy of a few nanometers and thus a relative error of less than 10%. The underlying physical principle of this method is that strong Mie resonances dominate the optical scattering spectra of most semiconducting NWs and can thus be exploited. The feasibility of this method is demonstrated using GaAs NWs but it should be applicable to most types of semiconducting NWs as well. Dark field optical microscopy shows that even slight tapering of the NWs, i.e. diameter variations of a few nanometers, can be detected by a visible color change. Abrupt diameter changes of a few nanometers, as they occur for example when growth conditions vary, can be determined as well. In addition a profound analysis of the elastic scattering properties of individual GaAs NWs is presented theoretically using Mie calculations as well as experimentally by dark field microscopy. This method has the advantage that no vacuum technique is needed, a fast and reliable analysis is possible based on cheap standard hardware.

Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures.

We present GaAs electroluminescent nanowire structures fabricated by metal organic vapor phase epitaxy. Electroluminescent structures were realized in both axial pn-junctions in single GaAs nanowires and free-standing nanowire arrays with a pn-junction formed between nanowires and substrate, respectively. The electroluminescence emission peak from single nanowire pn-junctions at 10 K was registered at an energy of around 1.32 eV and shifted to 1.4 eV with an increasing current. The line is attributed to the recombination in the compensated region present in the nanowire due to the memory effect of the vapor-liquid-solid growth mechanism. Arrayed nanowire electroluminescent structures with a pn-junction formed between nanowires and substrate demonstrated at 5 K a strong electroluminescence peak at 1.488 eV and two shoulder peaks at 1.455 and 1.519 eV. The main emission line was attributed to the recombination in the p-doped GaAs. The other two lines correspond to the tunneling-assisted photon emission and band-edge recombination in the abrupt junction, respectively. Electroluminescence spectra are compared with the micro-photoluminescence spectra taken along the single p-, n- and single nanowire pn-junctions to find the origin of the electroluminescence peaks, the distribution of doping species and the sharpness of the junctions.

Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy.

We demonstrate the potential of Kelvin probe force microscopy for simultaneously probing the topography and the work function of individual nanowires. Our technique allows us to visualize both the material and the doping contrast in single GaAs-based nanowires without the need to electrically contact the nanowires. In a GaAs/GaP heterostructure nanowire, a core-shell structure is found. This is attributed to a thermally activated radial overgrowth of GaAs, while in the GaP region the vertical nanowire growth dominates. In partially p-doped GaAs nanowires the doping transitions can be localized and the width of the depletion layer is estimated.