Evidence-based practice knowledge, attitudes, and practice of online graduate nursing students.

OBJECTIVES: This study aimed to evaluate changes in evidence-based practice (EBP) knowledge, attitudes, and practice of nursing students before and after completing an online, graduate level, introductory research/EBP course. DESIGN: A prospective one-group pretest-posttest design. SETTINGS: A private university in the Midwestern, USA. PARTICIPANTS: Sixty-three online nurse practitioner students in Master's program. METHODS: A convenient sample of online graduate nursing students who enrolled in the research/EBP course was invited to participate in the study. Study outcomes were measured using the Evidence-Based Practice Questionnaire (EBPQ) before and after completing the course. Descriptive statistics and paired-Samples t-test was used to assess the mean differences between pre-and post-test scores. RESULTS: Overall, students' post-test EBP scores were significantly improved over pre-test scores, t(63)=-9.034, p<0.001). Statistically significant differences were found for practice of EBP mean scores t(63)=-12.78, p=0.001). No significant differences were found between pre and post-tests on knowledge and attitudes toward EBP scores. Most frequently cited barriers to EBP were lack of understanding of statistics, interpretation of findings, lack of time, and lack of library resources.

Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires.

We use polarized photoluminescence excitation spectroscopy to observe the energy and symmetry of the predicted second conduction band in 130 nm diameter wurtzite InP nanowires. We find direct spectroscopic signatures for optical transitions among the A, B, and C hole bands and both the first and the second conduction bands. We determine that the splitting between the first and second conduction bands is 228 ± 7 meV in excellent agreement with theory. From these energies we show that the spin-orbit energy changes substantially between zinc blende and wurtzite InP. We discuss the two quite different solutions within the quasi-cubic approximation and the implications for these measurements. Finally, the observation of well-defined optical transitions between the B- and C-hole bands and the second conduction band suggests that either the theoretical description of the second conduction band as possessing Γ8 symmetry is incomplete, or other interactions are enabling these forbidden transitions.

Attrition of on-line graduate nursing students before and after program structural changes.

This study assessed attrition rates and reasons for withdrawal among on-line graduate students before and after the implementation of program structural changes in 2008. A descriptive retrospective cohort study was conducted using the academic and advising records of 853 on-line graduate nursing students enrolled between 2005 and 2010. Three student cohorts were examined: (Cohort 1) students who entered and withdrew prior to 2008, (Cohort 2) students who entered before and withdrew after 2008, and (Cohort 3) students who entered and withdrew after 2008. The proportions of student attrition from each cohort were 43% (97 out of 225 students), 19% (52 out of 277 students), and 7.4% (26 out of 351 students), respectively. Results indicated that students' attrition rates in Cohorts 2 and 3 were significantly less than Cohort 1. Supported by Alexander Astin's input-experience-output model, 2 major themes emerged as reasons for withdrawal--personal and academic. Findings from this study provided a critical view for further investigation and serve as an evaluation tool to identify trends and develop appropriate supportive interventions that facilitate positive student outcomes. Further research is warranted to investigate the effects of the program structural changes on students' attitudes and program satisfaction.

Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes.

The electronic properties of thin, nanometer scale GaAs quantum well tubes embedded inside the AlGaAs shell of a GaAs core-multishell nanowire are investigated using optical spectroscopies. Using numerical simulations to model cylindrically and hexagonally symmetric systems, we correlate these electronic properties with structural characterization by aberration-corrected scanning transmission electron microscopy of nanowire cross sections. These tubular quantum wells exhibit extremely high quantum efficiency and intense emission for extremely low submicrowatt excitation powers in both photoluminescence and photoluminescence excitation measurements. Numerical calculations of the confined eigenstates suggest that the electrons and holes in their ground states are confined to extremely localized one-dimensional filaments at the corners of the hexagonal structure which extend along the length of the nanowire.

Transient Rayleigh scattering: a new probe of picosecond carrier dynamics in a single semiconductor nanowire.

Using a new technique, transient Rayleigh scattering, we show that measurements from a single GaAs/AlGaAs core-shell semiconductor nanowire provide sensitive and detailed information on the time evolution of the density and temperature of the electrons and holes after photoexcitation by an intense laser pulse. Through band filling, band gap renormalization, and plasma screening, the presence of a dense and hot electron-hole plasma directly influences the real and imaginary parts of the complex index of refraction that in turn affects the spectral dependence of the Rayleigh scattering cross-section in well-defined ways. By measuring this spectral dependence as a function of time, we directly determine the thermodynamically independent density and temperature of the electrons and holes as a function of time after pulsed excitation as the carriers thermalize to the lattice temperature. We successfully model the results by including ambipolar transport, recombination, and cooling through optic and acoustic phonon emission that quantify the hole mobility at ∼68,000 cm(2)/V·s, linear decay constant at 380 ps, bimolecular recombination rate at 4.8 × 10(-9) cm(3)/s and the energy-loss rate of plasma due to optical and acoustic phonon emission.

Photomodulated rayleigh scattering of single semiconductor nanowires: probing electronic band structure.

The internal electronic structures of single semiconductor nanowires can be resolved using photomodulated Rayleigh scattering spectroscopy. The Rayleigh scattering from semiconductor nanowires is strongly polarization sensitive which allows a nearly background-free method for detecting only the light that is scattered from a single nanowire. While the Rayleigh scattering efficiency from a semiconductor nanowire depends on the dielectric contrast, it is relatively featureless as a function of energy. However, if the nanowire is photomodulated using a second pump laser beam, the internal electronic structure can be resolved with extremely high signal-to-noise and spectral resolution. The photomodulated Rayleigh scattering spectra can be understood theoretically as a first derivative of the scattering efficiency that results from a modulation of the band gap and depends sensitively on the nanowire diameter. Fits to spectral lineshapes provide both the band structure and the diameter of individual GaAs and InP nanowires under investigation.

Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires.

Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations. This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.

The management of chronic wounds.

The burden that chronic wounds create for both the client and healthcare provider is set to increase. For clinicians managing wounds it is essential that slow to heal wounds are identified early and treated promptly. The early removal of necrotic tissue, adequate control of exudate and the reduction of any bioburden are key foundations for any management plan.

Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures.

We use time-resolved photoluminescence from single InP nanowires containing both wurtzite (WZ) and zincblende (ZB) crystalline phases to measure the carrier dynamics of quantum confined excitons in a type-II homostructure. The observed recombination lifetime increases by nearly 2 orders of magnitude from 170 ps for excitons above the conduction and valence band barriers to more than 8400 ps for electrons and holes that are strongly confined in quantum wells defined by monolayer-scale ZB sections in a predominantly WZ nanowire. A simple computational model, guided by detailed high-resolution transmission electron microscopy measurements from a single nanowire, demonstrates that the dynamics are consistent with the calculated distribution of confined states for the electrons and holes.

Unexpected benefits of rapid growth rate for III-V nanowires.

In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographic defects, and have very high purity with minimal intrinsic dopant incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal intriguing behavior in the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.

Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoexcited carriers in single InP nanowires. At early times after pulsed excitation, the photoluminescence line shape displays a characteristic broadening, consistent with emission from a degenerate, high-density electron-hole plasma. As the electron-hole plasma cools and the carrier density decreases, the emission rapidly converges toward a relatively narrow band consistent with free exciton emission from the InP nanowire. The free excitons in these single InP nanowires exhibit recombination lifetimes closely approaching that measured in a high-quality epilayer, suggesting that in these InP nanowires, electrons and holes are relatively insensitive to surface states. This results in higher quantum efficiencies than other single-nanowire systems as well as significant state-filling and band gap renormalization, which is observed at high electron-hole carrier densities.

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.

Nonequilibrium spin distributions in single GaAs/AlGaAs core-shell nanowires are excited using resonant polarized excitation at 10 K. At all excitation energies, we observe strong photoluminescence polarization due to suppressed radiative recombination of excitons with dipoles aligned perpendicular to the nanowire. Excitation resonances are observed at 1- or 2-LO phonon energies above the exciton ground states. Using rate equation modeling, we show that, at the lowest energies, strongly nonequilibrium spin distributions are present and we estimate their spin relaxation rate.

High efficiency photonic crystal based wavelength demultiplexer.

A highly efficient design of a two-channel wavelength demultiplexer in the visible region is presented with finite-difference time-domain simulations. The design process is described in detail with particular attention to the challenges inherent in fabrication of an actual device. A 2D triangular lattice photonic crystal with 75nm air pores in a silicon nitride planar waveguide provides the confinement for visible light. The device losses due to fabrication errors such as stitching misalignment of write fields during e-beam lithography and variation in air pore diameters from etching are modeled using realistic parameters from initial fabrication runs. These simulation results will be used to guide our next generation design of high efficiency photonic crystal based demultiplexing devices.