Tunable quantum emitters on large-scale foundry silicon photonics.

Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry process. With this platform, we achieve single-photon emission via resonance fluorescence and scalable emission wavelength tunability. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.

A self-referenced interferometer for in situ cryogenic wafer curvature measurements.

A self-referenced interferometer to measure time-varying curvature in mechanically unstable environments is needed in many applications. One application that demands this measurement technique with fast data acquisition, 2D sensitivity, and insensitivity to vibration is the measurement of thermal strain in thin films in operational environments. The diverging beam interferometer described here demonstrates an angular sensitivity to the local curvature using interferograms captured by a CMOS camera. Two-dimensional Fourier analysis is used to extract curvature changes. The interferometer demonstrates an experimental sensitivity to curvature changes on the order of 10-4 m-1 and is used to measure thermal stresses in a cryogenic environment of a polycrystalline titanium nitride thin film on a silicon wafer that exhibits anisotropic curvature.

Bright Telecom-Wavelength Single Photons Based on a Tapered Nanobeam.

Telecom-wavelength single photons are essential components for long-distance quantum networks. However, bright and pure single photon sources at telecom wavelengths remain challenging to achieve. Here, we demonstrate a bright telecom-wavelength single photon source based on a tapered nanobeam containing InAs/InP quantum dots. The tapered nanobeam enables directional and Gaussian-like far-field emission of the quantum dots. As a result, using above-band excitation we obtain an end-to-end brightness of 4.1 ± 0.1% and first-lens brightness of 27.0 ± 0.1% at the ∼1300 nm wavelength. Furthermore, we adopt quasi-resonant excitation to reduce both multiphoton emission and decoherence from unwanted charge carriers. As a result, we achieve a coherence time of 523 ± 16 ps and postselected Hong-Ou-Mandel visibility of 0.91 ± 0.09 along with a comparable first-lens brightness of 21.0 ± 0.1%. These results represent a major step toward a practical fiber-based single photon source at telecom wavelengths for long-distance quantum networks.

Super-Radiant Emission from Quantum Dots in a Nanophotonic Waveguide.

Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum interaction between multiple quantum dots on-a-chip is a challenging task due to the randomness in their frequency and position, requiring local tuning technique and long-range quantum interaction. Here, we demonstrate quantum interactions between separated two quantum dots on a nanophotonic waveguide. We achieve a photon-mediated long-range interaction by integrating the quantum dots to the same optical mode of a nanophotonic waveguide and overcome spectral mismatch by incorporating on-chip thermal tuners. We observe their quantum interactions of the form of super-radiant emission, where the two dots collectively emit faster than each dot individually. Creating super-radiant emission from integrated quantum emitters could enable compact chip-integrated photonic structures that exhibit long-range quantum interactions. Therefore, these results represent a major step toward establishing photonic quantum information processors composed of multiple interacting quantum emitters on a semiconductor chip.

Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays.

Understanding the atomically precise arrangement of atoms at epitaxial interfaces is important for emerging technologies such as quantum materials that have function and performance dictated by bonds and defects that are energetically active on the micro-electronvolt scale. A combination of atomistic modeling and dislocation theory analysis describes both primary and secondary dislocation networks at the metamorphic Al/Si (111) interface, which is experimentally validated by atomic resolution scanning transmission electron microscopy. The electron microscopy images show primary misfit dislocations for the majority of the strain relief and evidence of a secondary structure allowing for complete relaxation of the Al-Si misfit strain. This study demonstrates the equilibrium interface that represents the lowest energy structure of a highly mismatched and semicoherent single-crystal interface with complete strain relief in an atomically abrupt structure.

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

Two-Photon Interference from the Far-Field Emission of Chip-Integrated Cavity-Coupled Emitters.

Interactions between solid-state quantum emitters and cavities are important for a broad range of applications in quantum communication, linear optical quantum computing, nonlinear photonics, and photonic quantum simulation. These applications often require combining many devices on a single chip with identical emission wavelengths in order to generate two-photon interference, the primary mechanism for achieving effective photon-photon interactions. Such integration remains extremely challenging due to inhomogeneous broadening and fabrication errors that randomize the resonant frequencies of both the emitters and cavities. In this Letter, we demonstrate two-photon interference from independent cavity-coupled emitters on the same chip, providing a potential solution to this long-standing problem. We overcome spectral mismatch between different cavities due to fabrication errors by depositing and locally evaporating a thin layer of condensed nitrogen. We integrate optical heaters to tune individual dots within each cavity to the same resonance with better than 3 µeV of precision. Combining these tuning methods, we demonstrate two-photon interference between two devices spaced by less than 15 µm on the same chip with a postselected visibility of 33%, which is limited by timing resolution of the detectors and background. These results pave the way to integrate multiple quantum light sources on the same chip to develop quantum photonic devices.

Enhanced continuous-wave four-wave mixing efficiency in nonlinear AlGaAs waveguides.

Enhancements of the continuous-wave four-wave mixing conversion efficiency and bandwidth are accomplished through the application of plasma-assisted photoresist reflow to reduce the sidewall roughness of sub-square-micron-modal area waveguides. Nonlinear AlGaAs optical waveguides with a propagation loss of 0.56 dB/cm demonstrate continuous-wave four-wave mixing conversion efficiency of -7.8 dB. Narrow waveguides that are fabricated with engineered processing produce waveguides with uncoated sidewalls and anti-reflection coatings that show group velocity dispersion of +0.22 ps²/m. Waveguides that are 5-mm long demonstrate broadband four-wave mixing conversion efficiencies with a half-width 3-dB bandwidth of 63.8-nm.

Efficient continuous-wave four-wave mixing in bandgap-engineered AlGaAs waveguides.

We present a side-by-side comparison of the nonlinear behavior of four passive AlGaAs ridge waveguides where the bandgap energy of the core layers ranges from 1.60 to 1.79 eV. By engineering the bandgap to suppress two-photon absorption, minimizing the linear loss, and minimizing the mode area, we achieve efficient wavelength conversion in the C-band via partially degenerate four-wave mixing with a continuous-wave pump. The observed conversion efficiency [Idler(OUT)/Signal(IN)=-6.8 dB] is among the highest reported in passive semiconductor or glass waveguides.

Low propagation loss AlGaAs waveguides fabricated with plasma-assisted photoresist reflow.

We report low-loss deep-etch AlGaAs optical waveguides fabricated with nitrogen plasma-assisted photoresist reflow. The simultaneous application of a nitrogen plasma and heat is used to reduce the line edge roughness of patterned photoresist and limit the lateral spread of the photoresist patterns of submicron-scale waveguides. Comparison of the edge roughness of the etched sidewalls between the as-developed and smoothed photoresist etch samples show a reduction of the RMS roughness from 3.39±0.17 nm to 1.39±0.03 nm. The reduction in propagation loss is verified by measured waveguide loss as a function of waveguide widths. A 0.65-µm wide waveguide with a modal area of 0.4 µm(2) is fabricated with a propagation loss as low as 1.20±0.13 dB/cm for the transverse-electric mode.

Mid-infrared difference-frequency generation in suspended GaAs waveguides.

We experimentally demonstrate mid-infrared difference-frequency generation in suspended 181 nm thick GaAs waveguides. Generation of the idler at wavelengths between 2800 and 3150 nm is enabled by form-birefringent phase-matching in ultrahigh index-contrast waveguides. Nonlinear mixing has a measured efficiency of 0.4 W⁻¹ in a 1.2 mm long waveguide using a CW signal tunable between 1490 and 1620 nm and a CW pump tunable between 1018 and 1032 nm at powers of a few mW.

Measurement of small birefringence and loss in a nonlinear single-mode waveguide.

We design and fabricate a birefringent semiconductor waveguide for application to nonlinear photonics, demonstrating that it is possible to engineer a small birefringence into such a device using multiple core layers. We also demonstrate a simple technique to accurately determine small waveguide birefringence using a differential measurement, present useful methods for coupling light into and out of the device, and make estimates of coupling and linear device losses.

Phase-sensitive amplification using gain saturation in a nonlinear Sagnac interferometer.

Phase-sensitive amplification of picosecond optical pulses was demonstrated using an SOA as the nonlinear medium inside a Sagnac interferometer. Ratios of maximum to minimum gain of more than 3:1 were experimentally measured. Numerical simulations using a semiconductor amplifier model are consistent with experiments.

Implementation of discrete unitary transformations by multimode waveguide holograms.

Integration of holograms into multimode waveguides allows the implementation of arbitrary unitary mode transformations and unitary matrix-vector multiplication. Theoretical analysis is used to justify a design approach to implement specific functions in these devices. Based on this approach, a compact mode-order converter, a Hadamard transformer, and a spatial pattern generator-correlator are proposed and analyzed. Beam propagation simulations are used to verify the theoretical calculations and to address bandwidth, scalability, and fabrication criteria. Optical pattern generators were successfully fabricated using standard photolithographic techniques to demonstrate the feasibility of the devices.

Narrowband generation of ultrafast acoustic and thermal transients in thin films for enhanced detectability.

A technique for the narrowband generation of ultrafast acoustic and thermal transients in thin films is demonstrated; this technique allows for enhanced detectability of these transients. The approach pursued uses a reduced-bandwidth, optical pulse train for excitation that is constructed from a series of time-delayed pulses derived from a single-laser pulse. The underlying physical limitations of this approach are considered in order to assess conditions under which successful bandwidth reduction can be realized. Results in an aluminum thin film on a tungsten-carbide substrate show successful generation and detection of a narrowband acoustic signal centered at 32.34 GHz.