Aerosol-Assisted Chemical Vapor Deposition of 2H-WS2 From Single-Source Tungsten Dithiolene Precursors.

The tungsten carbonyl dimethyldithiolene (dmdt) complexes W(CO)4(dmdt), W(CO)2(dmdt)2, and W(dmdt)3 were evaluated as potential single-source precursors for the chemical vapor deposition of WS2. The results of TGA-MS, DIP-MS, and pyrolysis with NMR analysis were consistent with a thermal decomposition pathway in which loss of 2-butyne through a retro[3+2]cycloaddition of the dithiolene ligand generated terminal sulfido ligands. Aerosol-assisted chemical vapor deposition onto silicon substrates was performed using all three complexes, yielding 2H-WS2 thin films as characterized by Raman spectroscopy and GI-XRD. Film morphology and elemental composition of the films were determined using SEM, EDS, and XPS. Four-point probe measurements afforded a film resistivity of 8.37 Ωcm for a sample deposited from W(dmdt)3 in toluene at 600 °C.

Molecular Layer Deposition of a Hafnium-Based Hybrid Thin Film as an Electron Beam Resist.

The development of new resist materials is vital to fabrication techniques for next-generation microelectronics. Inorganic resists are promising candidates because they have higher etch resistance, are more impervious to pattern collapse, and are more absorbing of extreme ultraviolet (EUV) radiation than organic resists. However, there is limited understanding about how they behave under irradiation. In this work, a Hf-based hybrid thin film resist, known as "hafnicone", is deposited from the vapor-phase via molecular layer deposition (MLD), and its electron-beam and deep-ultraviolet (DUV)-induced patterning mechanism is explored. The hafnicone thin films are deposited at 100 °C by using the Hf precursor tetrakis(dimethylamido)hafnium(IV) and the organic precursor ethylene glycol. E-beam lithography, scanning electron microscopy, and profilometry are used to investigate the resist performance of hafnicone. With 3 M HCl as the developer, hafnicone behaves as a negative tone resist which exhibits a sensitivity of 400 µC/cm2 and the ability to resolve 50 nm line widths. The resist is characterized via X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy (IR) to investigate the patterning mechanism, which is described in the context of classical nucleation theory. This study of hafnicone hybrid MLD demonstrates the ability for the bottom-up vapor deposition of inorganic resists to be utilized in advanced e-beam and DUV lithographic techniques.

Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3-x and Al(CyH2y+1)3 Precursors.

The adsorption of metalorganic and metal halide precursors on the SiO2 surface plays an essential role in thin-film deposition processes such as atomic layer deposition (ALD). In the case of aluminum oxide (Al2O3) films, the growth characteristics are influenced by the precursor structure, which controls both chemical reactivity and the geometrical constraints during deposition. In this work, a systematic study using a series of Al(CH3)xCl3-x (x = 0, 1, 2, and 3) and Al(CyH2y+1)3 (y = 1, 2, and 3) precursors is carried out using a combination of experimental spectroscopic techniques together with density functional theory calculations and Monte Carlo simulations to analyze differences across precursor molecules. Results show that reactivity and steric hindrance mutually influence the ALD surface reaction. The increase in the number of chlorine ligands in the precursor shifts the deposition temperature higher, an effect attributed to more favorable binding of the intermediate species due to higher Lewis acidity, while differences between precursors in film growth per cycle are shown to originate from variations in adsorption activation barriers and size-dependent saturation coverage. Comparison between the theoretical and experimental results indicates that the Al(CyH2y+1)3 precursors are favored to undergo two ligand exchange reactions upon adsorption at the surface, whereas only a single Cl-ligand exchange reaction is energetically favorable upon adsorption by the AlCl3 precursor. By pursuing the first-principles design of ALD precursors combined with experimental analysis of thin-film growth, this work enables a robust understanding of the effect of precursor chemistry on ALD processes.

Multi-metal coordination polymers grown through hybrid molecular layer deposition.

Coordination polymers deposited by hybrid molecular layer deposition (MLD) techniques are of interest as highly conformal, functional materials. Incorporation of a second metal into these coordination polymers can result in additional functionality or fine tuning of the materials properties. Here, we investigate the deposition of multi-metal coordination polymers using hybrid MLD of Zn-Al and Zn-Hf with ethylene glycol as the organic linker. It is found that facile transmetalation occurs for the Zn-Al films, which results in Al-rich films, but does not take place for the Zn-Hf films. Additionally, the Zn-Hf films are found to be more resilient to ambient conditions than the pure Zn-based coordination polymer.

Understanding chemical and physical mechanisms in atomic layer deposition.

Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from "ideal" film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters.

N,N-Disubstituted-N'-acylthioureas as modular ligands for deposition of transition metal sulfides.

First row transition metal complexes (Ni, Co, Cu, Zn) with N,N-disubstituted-N'-acylthiourea ligands have been synthesized and characterized. Bis(N,N-diisopropyl-N'-cinnamoylthiourea)nickel was found to have the lowest onset temperature for thermal decomposition. Thin film deposition of Ni, Co, and Zn sulfides by aerosol assisted chemical vapor deposition from their respective N,N-diisopropyl-N'-cinnamoylthiourea complexes at 350 °C has been demonstrated.

Synthesis and Characterization of Tungsten Nitrido Amido Guanidinato Complexes as Precursors for Chemical Vapor Deposition of WNxCy Thin Films.

Tungsten nitrido amido guanidinato complexes of the type WN(NR2)[(NR')2C(NR2)]2 (R = Me, Et; R' = i Pr, Cy) were synthesized as precursors for aerosol-assisted chemical vapor deposition (AACVD) of WNxCy thin films. The reaction of tungsten nitrido amido complexes of the type WN(NR2)3 (R = Me, Et) with two equivalents of a carbodiimide R'N=C=NR' (R' = i Pr, Cy) resulted in two insertions of a carbodiimide into W-N(amido) bonds, affording bis(guanidinato) amido nitrido tungsten complexes. These compounds were characterized by 14N NMR, indicating distinctive chemical shifts for each type of N-bound ligand. Crystallographic structure determination of WN(NMe2)[(N i Pr)2C(NMe2)]2 showed the guanidinato ligands to be non-equivalent. The complex WN(NMe2)[(N i Pr)2C(NMe2)]2 was demonstrated to serve as a precursor for AACVD of WNxCy thin films, resulting in featureless, X-ray amorphous thin films for growth temperatures 200 - 400 °C.

Aerosol-assisted chemical vapor deposition of WS2 from the single source precursor WS(S2)(S2CNEt2)2.

WS(S2)(S2CNEt2)2 has been successfully employed in the aerosol-assisted chemical vapor deposition of WS2 at temperatures above 350 °C. This precursor was found to decompose primarily through the loss of H2S, CS2, and SCNEt. The WS2 deposits were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. The deposits exhibited plate-like structures growing vertically from the substrate.

Universal Length Dependence of Rod-to-Seed Exciton Localization Efficiency in Type I and Quasi-Type II CdSe@CdS Nanorods.

A critical step involved in many applications of one-dimensional seeded CdSe@CdS nanorods, such as luminescent solar concentrators, optical gains, and photocatalysis, is the localization of excitons from the light-harvesting CdS nanorod antenna into the light-emitting CdSe quantum dot seed. We report that the rod-to-seed exciton localization efficiency decreases with the rod length but is independent of band alignment between the CdSe seed and CdS rod. This universal dependence can be well modeled by the competition between exciton one-dimensional diffusion to the CdSe seed and trapping on the CdS rod. This finding provides a rational approach for optimizing these materials for their various device applications.

Colloidal polymers from dipolar assembly of cobalt-tipped CdSe@CdS nanorods.

The synthesis of a modular colloidal polymer system based on the dipolar assembly of CdSe@CdS nanorods functionalized with a single cobalt nanoparticle "tip" (CoNP-tip) is reported. These heterostructured nanorods spontaneously self-assembled via magnetic dipolar associations of the cobalt domains. In these assemblies, CdSe@CdS nanorods were carried as densely grafted side chain groups along the dipolar NP chain to form bottlebrush-type colloidal polymers. Nanorod side chains strongly affected the conformation of individual colloidal polymer bottlebrush chains and the morphology of thin films. Dipolar CoNP-tipped nanorods were then used as "colloidal monomers" to form mesoscopic assemblies reminiscent of traditional copolymers possessing segmented and statistical compositions. Investigation of the phase behavior of colloidal polymer blends revealed the formation of mesoscopic phase separated morphologies from segmented colloidal copolymers. These studies demonstrated the ability to control colloidal polymer composition and morphology in a manner observed for classical polymer systems by synthetic control of heterostructured nanorod structure and harnessing interparticle dipolar associations.

Directing the deposition of ferromagnetic cobalt onto Pt-tipped CdSe@CdS nanorods: synthetic and mechanistic insights.

A methodology providing access to dumbbell-tipped, metal-semiconductor and metal oxide-semiconductor heterostructured nanorods has been developed. The synthesis and characterization of CdSe@CdS nanorods incorporating ferromagnetic cobalt nanoinclusions at both nanorod termini (i.e., dumbbell morphology) are presented. The key step in the synthesis of these heterostructured nanorods was the decoration of CdSe@CdS nanorods with platinum nanoparticle tips, which promoted the deposition of metallic CoNPs onto Pt-tipped CdSe@CdS nanorods. Cobalt nanoparticle tips were then selectively oxidized to afford CdSe@CdS nanorods with cobalt oxide domains at both termini. In the case of longer cobalt-tipped nanorods, heterostructured nanorods were observed to self-organize into complex dipolar assemblies, which formed as a consequence of magnetic associations of terminal CoNP tips. Colloidal polymerization of these cobalt-tipped nanorods afforded fused nanorod assemblies from the oxidation of cobalt nanoparticle tips at the ends of nanorods via the nanoscale Kirkendall effect. Wurtzite CdS nanorods survived both the deposition of metallic CoNP tips and conversion into cobalt oxide phases, as confirmed by both XRD and HRTEM analysis. A series of CdSe@CdS nanorods of four different lengths ranging from 40 to 174 nm and comparable diameters (6-7 nm) were prepared and modified with both cobalt and cobalt oxide tips. The total synthesis of these heterostructured nanorods required five steps from commercially available reagents. Key synthetic considerations are discussed, with particular emphasis on reporting isolated yields of all intermediates and products from scale up of intermediate precursors.