Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer.

We report a contact engineering method to minimize the Schottky barrier height (SBH) and contact resistivity of MoS2 field-effect transistors (FETs) by using ultrathin 2D semiconductors as contact interlayers. We demonstrate that the addition of a few-layer MoSe2 between the MoS2 channel and Ti electrodes effectively reduces the SBH at the contacts from ∼100 to ∼25 meV, contact resistivity from ∼6 × 10-5 to ∼1 × 10-6 Ω cm2, and current transfer length from ∼425 to ∼60 nm. The drastic reduction of SBH can be attributed to the synergy of Fermi-level pinning close to the conduction band edge of the MoSe2 interlayer and favorable conduction-band offset between the MoSe2 interlayer and MoS2 channel. As a result of the improved contacts, MoS2 FETs with Ti/MoSe2 contacts also demonstrate higher two-terminal mobility.

Near-infrared optical transitions in PdSe2 phototransistors.

We investigate electronic and optoelectronic properties of few-layer palladium diselenide (PdSe2) phototransistors through spatially-resolved photocurrent measurements. A strong photocurrent resonance peak is observed at 1060 nm (1.17 eV), likely attributed to indirect optical transitions in few-layer PdSe2. More interestingly, when the thickness of PdSe2 flakes increases, more and more photocurrent resonance peaks appear in the near-infrared region, suggesting strong interlayer interactions in few-layer PdSe2 help open up more optical transitions between the conduction and valence bands of PdSe2. Moreover, gate-dependent measurements indicate that remarkable photocurrent responses at the junctions between PdSe2 and metal electrodes primarily result from the photovoltaic effect when a PdSe2 phototransistor is in the off-state and are partially attributed to the photothermoelectric effect when the device turns on. We also demonstrate PdSe2 devices with a Seebeck coefficient as high as 74 µV K-1 at room temperature, which is comparable with recent theoretical predications. Additionally, we find that the rise and decay time constants of PdSe2 phototransistors are ∼156 µs and ∼163 µs, respectively, which are more than three orders of magnitude faster than previous PdSe2 work and two orders of magnitude over other noble metal dichalcogenide phototransistors, offering new avenues for engineering future optoelectronics.

Plasmonic nanocrystal solar cells utilizing strongly confined radiation.

The ability of metal nanoparticles to concentrate light via the plasmon resonance represents a unique opportunity for funneling the solar energy in photovoltaic devices. The absorption enhancement in plasmonic solar cells is predicted to be particularly prominent when the size of metal features falls below 20 nm, causing the strong confinement of radiation modes. Unfortunately, the ultrashort lifetime of such near-field radiation makes harvesting the plasmon energy in small-diameter nanoparticles a challenging task. Here, we develop plasmonic solar cells that harness the near-field emission of 5 nm Au nanoparticles by transferring the plasmon energy to band gap transitions of PbS semiconductor nanocrystals. The interfaces of Au and PbS domains were designed to support a rapid energy transfer at rates that outpace the thermal dephasing of plasmon modes. We demonstrate that central to the device operation is the inorganic passivation of Au nanoparticles with a wide gap semiconductor, which reduces carrier scattering and simultaneously improves the stability of heat-prone plasmonic films. The contribution of the Au near-field emission toward the charge carrier generation was manifested through the observation of an enhanced short circuit current and improved power conversion efficiency of mixed (Au, PbS) solar cells, as measured relative to PbS-only devices.

Suppressed carrier scattering in CdS-encapsulated PbS nanocrystal films.

One of the key challenges facing the realization of functional nanocrystal devices concerns the development of techniques for depositing colloidal nanocrystals into electrically coupled nanoparticle solids. This work compares several alternative strategies for the assembly of such films using an all-optical approach to the characterization of electron transport phenomena. By measuring excited carrier lifetimes in either ligand-linked or matrix-encapsulated PbS nanocrystal films containing a tunable fraction of insulating ZnS domains, we uniquely distinguish the dynamics of charge scattering on defects from other processes of exciton dissociation. The measured times are subsequently used to estimate the diffusion length and the carrier mobility for each film type within the hopping transport regime. It is demonstrated that nanocrystal films encapsulated into semiconductor matrices exhibit a lower probability of charge scattering than that of nanocrystal solids cross-linked with either 3-mercaptopropionic acid or 1,2-ethanedithiol molecular linkers. The suppression of carrier scattering in matrix-encapsulated nanocrystal films is attributed to a relatively low density of surface defects at nanocrystal/matrix interfaces.