ABSTRACT
Graphene-based conductors such as films and fibers aim to transfer graphene's extraordinary properties to the macroscopic scale. They show great potential for large-scale applications, but there is a lack of theoretical models to describe their electrical characteristics. We present a network simulation method to model the electrical conductivity of graphene-based conductors. The method considers all of the relevant microscopic parameters such as graphene flake conductivity, interlayer conductivity, packing density, and flake size. To provide a mathematical framework, we derive an analytical expression, which reproduces the essential features of the network model. We also find good agreement with experimental data. Our results offer production guidelines and enable the systematic optimization of high-performance graphene-based conductor materials. A generalization of the model to any conductor based on two-dimensional materials is straightforward.
ABSTRACT
We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride heterostructures. The technique is based on photoinduced doping by a focused laser beam and does neither require masks nor photoresists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is limited by only the laser spot size (≈600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.
