Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors.

Special radiation-hard and ultralow-power complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are used in the fields of deep space, nuclear energy, and medical X-ray imaging. In this work, we first constructed radiation-hard, repairable, and sub-1 V-driven printed hybrid CMOS field-effect transistors (FETs) and ICs, which integrate printed carbon nanotube (CNT) (band gap ∼ 0.65 eV) p-type FETs and indium oxide (In2O3) (band gap ∼3.64 eV) n-type FETs on glass substrates using a printed PS-PMMA/[EMIM][TFSI] mixture as the gate dielectric layer. The PS-PMMA/[EMIM][TFSI] mixture gate dielectric layer not only lowered the supply voltage (VDD) by providing ultrahigh gate efficiency but also improved the anti-irradiation ability of the hybrid CMOS FETs and ICs. Specifically, the hybrid CMOS inverters exhibited rail-to-rail output with a high voltage gain and high noise margins at a low VDD that could be scaled down to 0.4 V. Furthermore, the hybrid CMOS FETs and ICs showed excellent radiation hardness, that is, withstanding a 3 Mrad (Si) total irradiation dose (TID) at a dose rate of 560 rad s-1 (Si), which is an exceptional result for CMOS transistors and ICs. Furthermore, the radiation-damaged CMOS FETs could be fully recovered by removing and reprinting the PS-PMMA/[EMIM][TFSI] mixture gate dielectric layer, indicating the ability to repair irradiation damage. This work provides an in-space IC fabrication technology.

Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics.

The development of ultralow-power and easy-to-fabricate electronics with potential for large-scale circuit integration (i.e., complementary or complementary-like) is an outstanding challenge for emerging off-the-grid applications, e.g., remote sensing, "place-and-forget", and the Internet of Things. Herein we address this challenge through the development of ambipolar transistors relying on solution-processed polymer-sorted semiconducting carbon nanotube networks (sc-SWCNTNs) operating in the deep-subthreshold regime. Application of self-assembled monolayers at the active channel interface enables the fine-tuning of sc-SWCNTN transistors toward well-balanced ambipolar deep-subthreshold characteristics. The significance of these features is assessed by exploring the applicability of such transistors to complementary-like integrated circuits, with respect to which the impact of the subthreshold slope and flatband voltage on voltage and power requirements is studied experimentally and theoretically. As demonstrated with inverter and NAND gates, the ambipolar deep-subthreshold sc-SWCNTN approach enables digital circuits with complementary-like operation and characteristics including wide noise margins and ultralow operational voltages (≤0.5 V), while exhibiting record-low power consumption (≤1 pW/µm). Among thin-film transistor technologies with minimal material complexity, our approach achieves the lowest energy and power dissipation figures reported to date, which are compatible with and highly attractive for emerging off-the-grid applications.

Overcoming Electrochemical Instabilities of Printed Silver Electrodes in All-Printed Ion Gel Gated Carbon Nanotube Thin-Film Transistors.

Silver ink is the most widely used conductive material for printing electrodes in the fabrication of all-printed ion gel gated transistors because of their high conductivity and low cost. However, electrochemical instability of printed silver electrodes is generally one of the biggest issues, whether it is in air where silver gets oxidized or in a moisture environment where electrochemical migration occurs. Notwithstanding, the electrochemical stability of printed silver electrodes in ion gel medium has not been studied so far. In this work, we studied the electrochemical instabilities of printed silver electrodes in fully printed ion gel gated single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) and developed some strategies to overcome these issues. All-printed ion gel-based p-type SWCNT TFTs were employed to investigate the impact of electrochemical instabilities on the electrical behavior of printed SWCNT TFTs. The results have demonstrated that printed silver was unstable at anodic and cathodic polarization because of the corrosion by the ionic liquid. Besides, anodic corrosion of silver source/drain electrodes was shown to be responsible for the electrical failure of printed SWCNT TFTs in both the linear and saturated regime. These issues were completely resolved when preventing printed silver electrodes from coming into direct contact with ion gels. For example, ion gels were partially printed in device channels to avoid contacting the printed silver source and drain electrodes. At the same time, silver side-gate electrodes were replaced by inkjet-printed PEDOT:PSS electrodes to avoid gate electrode-related instabilities. Consequently, all-printed electrochemically stable SWCNT TFTs fabricated were obtained with enhanced performance of higher ION/IOFF ratios (105 to 106), smaller subthreshold slopes (∼70 mV/dec), and smaller hysteresis (ΔV = 0.025 V) at gate voltages from 1.2 to -0.5 V. Additionally, the polarity of all-printed SWCNT TFTs was converted from the p-channel to ambipolar while achieving lower leakage currents.

When a Red-NIR-Emissive Cs2 [Mo6 Br14 ] Interacts with an Active Diureasil-PEO Matrix: Design of Tunable and White-Light-Emitting Hybrid Material.

Hybrid materials that combine diureasil matrices and octahedral molybdenum clusters have been synthesized to design lead-, cadmium- and rare-earth-free emitters for lighting or optoelectronic applications. This association leads to homogeneous and stable hybrids, for which the emission color can be tailored in the entire visible range, including white light; this is thanks to effective energy transfers from the host to the nanocluster.

Direct Integration of Red-NIR Emissive Ceramic-like An M6 Xi8 Xa6 Metal Cluster Salts in Organic Copolymers Using Supramolecular Interactions.

Hybrid nanomaterials made of inorganic nanocomponents dispersed in an organic host raise an increasing interest as low-cost solution-processable functional materials. However, preventing phase segregation while allowing a high inorganic doping content remains a major challenge, and usual methods require a functionalization step prior integration. Herein, we report a new approach to design such nanocomposite in which ceramic-like metallic nanocluster compounds are embedded at 10 wt % in organic copolymers, without any functionalization. Dispersion homogeneity and stability are ensured by weak interactions occurring between the copolymer lateral chains and the nanocluster compound. Hybrids could be ink-jet printed and casted on a blue LED. This proof-of-concept device emits in the red-NIR area and generates singlet oxygen, O2 (1 Δg), of particular interest for lights, display, sensors or photodynamic based therapy applications.

Spirobifluorene-2,7-dicarbazole-4'-phosphine Oxide as Host for High-Performance Single-Layer Green Phosphorescent OLED Devices.

A new host material based on the 2,7,4'-substituted spirobifluorene platform has been designed and used in single-layer phosphorescent OLED with very high efficiency (EQE = 13.2%) and low turn-on voltage (2.4 V). This performance is among the best reported for green single-layer PhOLEDs and may open new avenues in the design of host materials for single-layer devices.

Epoxy Based Ink as Versatile Material for Inkjet-Printed Devices.

Drop on Demand inkjet printing is an attractive method for device fabrication. However, the reliability of the key printing steps is still challenging. This explains why versatile functional inks are needed. Epoxy based ink described in this study could solve this critical issue because it can be printed with low drawbacks (satellites droplets, long-lived filaments, etc.). Moreover, a wide concentration range of solute allows the fabrication of films from thin to high aspect ratio. Optimizing experimental parameters (temperature, overlap) and ink composition (single or cosolvent) is useful to tune the film profile. As a result, many shapes can be obtained such as donuts or hemispherical caps for a droplet and smooth or wavy shape for a thin film. This study demonstrates that epoxy based versatile ink can be used in numerous fields of applications (organic electronics, optics, sensors, MEMS, etc.). To prove this assertion, organic field effect transistors and light emitting films have been fabricated.