Thermal Imaging Metrology Using High Dynamic Range Near-Infrared Photovoltaic-Mode Camera.

The measurement of a wide temperature range in a scene requires hardware capable of high dynamic range imaging. We describe a novel near-infrared thermal imaging system operating at a wavelength of 940 nm based on a commercial photovoltaic mode high dynamic range camera and analyse its measurement uncertainty. The system is capable of measuring over an unprecedently wide temperature range; however, this comes at the cost of a reduced temperature resolution and increased uncertainty compared to a conventional CMOS camera operating in photodetective mode. Despite this, the photovoltaic mode thermal camera has an acceptable level of uncertainty for most thermal imaging applications with an NETD of 4-12 °C and a combined measurement uncertainty of approximately 1% K if a low pixel clock is used. We discuss the various sources of uncertainty and how they might be minimised to further improve the performance of the thermal camera. The thermal camera is a good choice for imaging low frame rate applications that have a wide inter-scene temperature range.

Valence band engineering of GaAsBi for low noise avalanche photodiodes.

Avalanche Photodiodes (APDs) are key semiconductor components that amplify weak optical signals via the impact ionization process, but this process' stochastic nature introduces 'excess' noise, limiting the useful signal to noise ratio (or sensitivity) that is practically achievable. The APD material's electron and hole ionization coefficients (α and ß respectively) are critical parameters in this regard, with very disparate values of α and ß necessary to minimize this excess noise. Here, the analysis of thirteen complementary p-i-n/n-i-p diodes shows that alloying GaAs with ≤ 5.1 % Bi dramatically reduces ß while leaving α virtually unchanged-enabling a 2 to 100-fold enhancement of the GaAs α/ß ratio while extending the wavelength beyond 1.1 µm. Such a dramatic change in only ß is unseen in any other dilute alloy and is attributed to the Bi-induced increase of the spin-orbit splitting energy (∆so). Valence band engineering in this way offers an attractive route to enable low noise semiconductor APDs to be developed.

Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties.

Deep-level defects in n-type GaAs1-x Bi x having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been studied by contactless electroreflectance and photoluminescence. We find that incorporating Bi suppresses the formation of GaAs-like electron traps, thus reducing the total trap concentration in dilute GaAsBi layers by over two orders of magnitude compared to GaAs grown under the same conditions. In order to distinguish between Bi- and host-related traps and to identify their possible origin, we used the GaAsBi band gap diagram to correlate their activation energies in samples with different Bi contents. This approach was recently successfully applied for the identification of electron traps in n-type GaAs1-x N x and assumes that the activation energy of electron traps decreases with the Bi (or N)-related downward shift of the conduction band. On the basis of this diagram and under the support of recent theoretical calculations, at least two Bi-related traps were revealed and associated with Bi pair defects, i.e. (VGa+BiGa)-/2- and (AsGa+BiGa)0/1-. In the present work it is shown that these defects also influence the photoluminescence properties of GaAsBi alloys.