Ferroelectric thin-film capacitors and piezoelectric switches for mobile communication applications.

Thin-film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 for stacked capacitors combined with breakdown voltages of 90 V have been achieved. The integration of these high-density capacitors with extremely high breakdown voltage is a major accomplishment in the world of passive components and has not yet been reported for any other passive integration technology. Furthermore, thin-film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.

Scanned probe imaging of quantum dots inside InAs nanowires.

We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowires, elucidating the physics of nanowire devices on a local scale. A charged SPM tip is used as a movable gate. Images of nanowire conductance versus tip position spatially map the conductance of InAs nanowires at liquid-He temperatures. Plots of conductance versus backgate voltage without the tip present show complex patterns of Coulomb-blockade peaks. Images of nanowire conductance identify their source as multiple quantum dots formed by disorder along the nanowire--each dot is surrounded by a series of concentric rings corresponding to Coulomb blockade peaks. An SPM image locates the dots and provides information about their size. In this way, SPM images can be used to understand the features that control transport through nanowires. The nanowires were grown from metal catalyst particles and have diameters approximately 80 nm and lengths 2-3 microm.

Electron emission from individual indium arsenide semiconductor nanowires.

A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve, and the energy spectrum of the emitted electron beam. The two investigated nanowires showed stable, Fowler-Nordheim-like emission behavior and a small energy spread. Their morphology was characterized afterward using transmission electron microscopy. The experimentally derived field enhancement factor corresponded to the one calculated using the basic structural information. The observed emission behavior contrasts the often unstable emission and large energy spread found for semiconductor emitters and supports the concept of Fermi-level pinning in indium arsenide nanowires. Indium arsenide nanowires may thus present a new type of semiconductor electron sources.

Increase of the photoluminescence intensity of InP nanowires by photoassisted surface passivation.

As-grown single-crystal InP nanowires, covered with a surface oxide, show a photoluminescence efficiency that strongly varies from wire to wire. We show that the luminescence efficiency of single-crystal InP nanowires can be improved by photoassisted wet chemical etching in a butanol solution containing HF and the indium-coordinating ligand trioctylphosphine oxide. Electron-hole photogeneration, electron scavenging, and oxidative dissolution combined with surface passivation by the indium-coordinating ligand are essential elements to improve the luminescence efficiency. Time traces of the luminescence of surface-passivated wires show strong oscillations resembling the on-off blinking observed with single quantum dots. These results reflect the strong influence of a single or a few nonradiative recombination center(s) on the luminescence properties of an entire wire.

Tunable supercurrent through semiconductor nanowires.

Nanoscale superconductor/semiconductor hybrid devices are assembled from indium arsenide semiconductor nanowires individually contacted by aluminum-based superconductor electrodes. Below 1 kelvin, the high transparency of the contacts gives rise to proximity-induced superconductivity. The nanowires form superconducting weak links operating as mesoscopic Josephson junctions with electrically tunable coupling. The supercurrent can be switched on/off by a gate voltage acting on the electron density in the nanowire. A variation in gate voltage induces universal fluctuations in the normal-state conductance, which are clearly correlated to critical current fluctuations. The alternating-current Josephson effect gives rise to Shapiro steps in the voltage-current characteristic under microwave irradiation.

Electron-conducting quantum-dot solids with ionic charge compensation.

Electron-conducting quantum-dot solids can be prepared on the basis of assemblies of colloidal insulating nanocrystals if electrons can be injected in the delocalized conduction orbitals. We discuss the energetics of electron injection in such an artificial solid consisting of weakly coupled quantum dots. We show that quantum confinement and electron electron repulsion determine the charging characteristics. The electron electron repulsion energy can be screened by three-dimensional charge compensation from trapped holes or positive inert ions inserted in the assembly. We present experimental results on the electron storage and long-range transport in assemblies of ZnO nanocrystals in which the electron charge is compensated by positive ions. The electron electron repulsion energy in assemblies permeated with an aqueous electrolyte solution is strongly screened. In contrast, the repulsion energy is about 100 meV in aprotic solvents; the repulsion energy strongly influences electron storage and the characteristics of long-range electron transport.

Long-range transport in an assembly of ZnO quantum dots: the effects of quantum confinement, Coulomb repulsion and structural disorder.

We have studied the storage and long-range transport of electrons in a porous assembly of weakly coupled ZnO quantum dots permeated with an aqueous and a propylene carbonate electrolyte solution. The number of electrons per ZnO quantum dot is controlled by the electrochemical potential of the assembly; the charge of the electrons is compensated by ions present in the pores. We show with optical and electrical measurements that the injected electrons occupy the S, P, and D type conduction electron levels of the quantum dots; electron storage in surface states is not important. With this method of three-dimensional charge compensation, up to ten electrons per quantum-dot can be stored if the assembly is permeated with an aqueous electrolyte. The screening of the electron charge is less effective in the case of an assembly permeated with a propylene carbonate electrolyte solution. Long-range electron transport is studied with a transistor set-up. In the case of ZnO assemblies permeated with an aqueous electrolyte, two quantum regimes are observed corresponding to multiple tunnelling between the S orbitals (at a low occupation) and P orbitals (at a higher occupation). In a ZnO quantum-dot assembly permeated with a propylene carbonate electrolyte solution, there is a strong overlap between these two regimes.