Negative Thermal Expansion in the Polymorphic Modification of Double Sulfate ß-AEu(SO4)2 (A-Rb+, Cs+).

New polymorphic modifications of double sulfates ß-AEu(SO4)2 (A-Rb+, Cs+) were obtained by the hydrothermal method, the structure of which differs significantly from the monoclinic modifications obtained earlier by solid-state methods. According to single-crystal diffraction data, it was found that the compounds crystallize in the orthorhombic system, space group Pnna, with parameters ß-RbEu(SO4)2: a = 9.4667(4) Å, b = 13.0786(5) Å, c = 5.3760(2) Å, V = 665.61(5) Å3; ß-CsEu(SO4)2: a = 9.5278(5) Å, b = 13.8385(7) Å, c = 5.3783(3) Å, V = 709.13(7) Å3. The asymmetric part of the unit cell contains one-half Rb+/Cs+ ion, one-half Eu3+ ion, both in special sites, and one SO42- ion. Both compounds exhibit nonlinear negative thermal expansion. According to the X-ray structural analysis and theoretical calculations, the polarizing effect of the alkali metal ion has a decisive influence on the demonstration of this phenomenon. Experimental indirect band gaps of ß-Rb and ß-Cs are 4.05 and 4.11 eV, respectively, while the direct band gaps are 4.48 and 4.54 eV, respectively. The best agreement with theoretical calculations is obtained using the ABINIT package employing PAW pseudopotentials with hybrid PBE0 functional, while norm-conserving pseudopotentials used in the frame of CASTEP code and LCAO approach in the Crystal package gave worse agreement. The properties of alkali ions also significantly affect the luminescent properties of the compounds, which leads to a strong temperature dependence of the intensity of the 5D0 → 7F4 transition in ß-CsEu(SO4)2 in contrast to much weaker dependence of this kind in ß-RbEu(SO4)2.

The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices.

We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of the random-element isodisplacement model. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, showed that the bands related to A1(LO) confined phonons are very sensitive to the degree of interface diffusion. As a result, a correlation between the Raman spectra in the range of A1(LO) confined phonons and the interface quality in SLs is obtained. This opens up new possibilities for the analysis of the structural characteristics of short-period GaN/AlN SLs using Raman spectroscopy.

Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra.

We report the results of experimental and theoretical studies of phonon modes in GaN/AlN superlattices (SLs) with a period of several atomic layers, grown by submonolayer digital plasma-assisted molecular-beam epitaxy, which have a great potential for use in quantum and stress engineering. Using detailed group-theoretical analysis, the genesis of the SL vibrational modes from the modes of bulk AlN and GaN crystals is established. Ab initio calculations in the framework of the density functional theory, aimed at studying the phonon states, are performed for SLs with both equal and unequal layer thicknesses. The frequencies of the vibrational modes are calculated, and atomic displacement patterns are obtained. Raman spectra are calculated and compared with the experimental ones. The results of the ab initio calculations are in good agreement with the experimental Raman spectra and the results of the group-theoretical analysis. As a result of comprehensive studies, the correlations between the parameters of acoustic and optical phonons and the structure of SLs are obtained. This opens up new possibilities for the analysis of the structural characteristics of short-period GaN/AlN SLs using Raman spectroscopy. The results obtained can be used to optimize the growth technologies aimed to form structurally perfect short-period GaN/AlN SLs.

Structural, Electronic and Vibrational Properties of YAl3(BO3)4.

The crystal structure of YAl3(BO3)4 is obtained by Rietveld refinement analysis in the present study. The dynamical properties are studied both theoretically and experimentally. The experimental Raman and Infrared spectra are interpreted using the results of ab initio calculations within density functional theory. The phonon band gap in the Infrared spectrum is observed in both trigonal and hypothetical monoclinic structures of YAl3(BO3)4. The electronic band structure is studied theoretically, and the value of the band gap is obtained. It was found that the YAl3(BO3)4 is an indirect band gap dielectric material.

Unraveling the Structure-Raman Spectra Relationships in V2O5 Polymorphs via a Comprehensive Experimental and DFT Study.

Vanadium pentoxide polymorphs (α-, ß-, γ'-, and ε'-V2O5) have been studied using the Raman spectroscopy and quantum-chemical calculations based on density functional theory. All crystal structures have been optimized by minimizing the total energy with respect to the lattice parameters and the positions of atoms in the unit cell. The structural optimization has been followed by the analysis of the phonon states in the Γ-point of the Brillouin zone, and the analysis has been completed by the computation of the Raman scattering intensities of the vibrational modes of the structures. The optimized structural characteristics compare well with the experimental data, and the calculated Raman spectra match the experimental ones remarkably well. With the good agreement between the spectra, a reliable assignment of the observed Raman peaks to the vibrations of specific structurals units in the V2O5 lattices is proposed. The obtained results support the viewpoint on the layered structure of vanadium pentoxide polymorphs as an ensemble of V2O5 chains held together by weaker interchain and interlayer interactions. Similarities and distinctions in the Raman spectra of the polymorphs have been highlighted, and the analysis of the experimental and computational data allows us, for the first time, to put forward spectrum-structure correlations for the four V2O5 structures. These findings are of the utmost importance for an efficient use of Raman spectroscopy to probe the changes at the atomic scale in the V2O5-based materials under electrochemical operation.