Physical properties of {Ti,Zr,Hf}2Ni2Sn compounds.

Physical properties, i.e. electrical resistivity (4.2-800 K), Seebeck coefficient (300-800 K), specific heat (2-110 K), Vickers hardness and elastic moduli (RT), have been defined for single-phase compounds with slightly nonstoichiometric compositions: Ti2.13Ni2Sn0.87, Zr2.025Ni2Sn0.975, and Hf2.055Ni2Sn0.945. From X-ray single crystal and TEM analyses, Ti2+xNi2Sn1-x, x ∼ 0.13(1), is isotypic with the U2Pt2Sn-type (space group P42/mnm, ternary ordered version of the Zr3Al2-type), also adopted by the homologous compounds with Zr and Hf. For all three polycrystalline compounds (relative densities >95%) the electrical resistivity of the samples is metallic-like with dominant scattering from static defects mainly conditioned by off-stoichiometry. Analyses of the specific heat curves Cpvs. T and Cp/T vs. T2 reveal Sommerfeld coefficients of γTi2Ni2Sn = 14.3(3) mJ mol-1 K-2, γZr2Ni2Sn = 10(1) mJ mol-1 K-2, γHf2Ni2Sn = 9.1(5) mJ mol-1 K-2 and low-temperature Debye-temperatures: θLTD = 373(7)K, 357(14)K and 318(10)K. Einstein temperatures were in the range of 130-155 K. Rather low Seebeck coefficients (<15 µV K-1), power factors (pf < 0.07 mW mK-2) and an estimated thermal conductivity of λ < 148 mW cm-1 K-1 yield thermoelectric figures of merit ZT < 0.007 at ∼800 K. Whereas for polycrystalline Zr2Ni2Sn elastic properties were determined by resonant ultrasound spectroscopy (RUS): E = 171 GPa, ν = 0.31, G = 65.5 GPa, and B = 147 GPa, the accelerated mechanical property mapping (XPM) mode was used to map the hardness and elastic moduli of T2Ni2Sn. Above 180 K, Zr2Ni2Sn reveals a quasi-linear expansion with CTE = 15.4 × 10-6 K-1. The calculated density of states is similar for all three compounds and confirms a metallic type of conductivity. The isosurface of elf shows a spherical shape for Ti/Zr/Hf atoms and indicates their ionic character, while the [Ni2Sn]n- sublattice reflects localizations around the Ni and Sn atoms with a large somewhat diffuse charge density between the closest Ni atoms.

Boron-phil and boron-phob structure units in novel borides Ni3Zn2B and Ni2ZnB: experiment and first principles calculations.

The crystal structures of two novel borides in the Ni-Zn-B system, τ5-Ni3Zn2B and τ6-Ni2ZnB, were determined by single crystal X-ray diffraction (XRSC) in combination with selected area electron diffraction in a transmission electron microscope (SAED-TEM) and electron probe microanalysis (EPMA). Both compounds crystallize in unique structure types (space group C2/m, a = 1.68942(8) nm, b = 0.26332(1) nm, c = 0.61904(3) nm, ß = 111.164(2)°, RF = 0.0219 for Ni3Zn2B, and space group C2/m, a = 0.95296(7) nm, b = 0.28371(2) nm, c = 0.59989(1) nm, ß = 93.009(4)°, RF = 0.0163 for Ni2ZnB). Both compounds have similar building blocks: two triangular prisms centered by boron atoms are arranged along the c-axis separated by Zn layers, which form empty octahedra connecting the boron centered polyhedra. Consistent with the (Ni+Zn)/B ratio, isolated boron atoms are found in τ5-Ni3Zn2B, while B-B pairs exist in τ6-Ni2ZnB. The crystal structure of Ni2ZnB is closely related to that of τ4-Ni3ZnB2, i.e. Ni2ZnB can be formed by removing the nearly planar nickel layer in Ni3ZnB2 and shifting the origin of the unit cell to the center of the B-B pair. The electrical resistivity and specific heat of τ5-Ni3Zn2B reveal the metallic behavior of this compound with an anomaly at low temperature, possibly arising from a Kondo-type interaction. Further analysis on the lattice contribution of the specific heat reveals similarity with τ4-Ni3ZnB2 with some indications of lattice softening in τ5-Ni3Zn2B, which could be related to the increasing metal content and the absence of B-B bonding in τ5-Ni3Zn2B. For the newly found phases, τ5-Ni3Zn2B and τ6-Ni2ZnB as well as for τ3-Ni21Zn2B20 and τ4-Ni3ZnB2 density functional theory (DFT) calculations were performed by means of the Vienna Ab initio Simulation Package (VASP). Total energies and forces were minimized in order to determine the fully relaxed structural parameters, which agree very well with experiment. Energies of formations in the range of -25.2 to -26.9 kJ mol-1 were calculated and bulk moduli in the range of 179.7 to 248.9 GPa were derived showing hardening by increasing the B concentration. Charge transfer is discussed in terms of Bader charges resulting in electronic transfer from Zn to the system and electronic charge gain by B. Ni charge contributions vary significantly with crystallographic position depending on B located in the neighbourhood. The electronic structure is presented in terms of densities of states, band structures and contour plots revealing Ni-B and Ni-Zn bonding features.

The half Heusler system Ti1+xFe1.33-xSb-TiCoSb with Sb/Sn substitution: phase relations, crystal structures and thermoelectric properties.

Investigations of phase relations in the ternary system Ti-Fe-Sb show that the single-phase region of the Heusler phase is significantly shifted from stoichiometric TiFeSb (reported previously in the literature) to the Fe-rich composition TiFe1.33Sb. This compound also exhibits Fe/Ti substitution according to Ti1+xFe1.33-xSb (-0.17 ≤ x ≤ 0.25 at 800 °C). Its stability, crystal symmetry and site preference were established by using X-ray powder techniques and were backed by DFT calculations. The ab initio modeling revealed TiFe1.375Sb to be the most stable composition and established the mechanisms behind Fe/Ti substitution for the region Ti1+xFe1.33-xSb, and of the Fe/Co substitution within the isopleth TiFe1.33Sb-TiCoSb. The calculated residual resistivity of Ti1+xFe1.33-xSb, as well as of the isopleths TiFe1.33Sb-TiCoSb, TiFe0.665Co0.5Sb-TiCoSb0.75Sn0.25 and TiFe0.33Co0.75Sb-TiCoSb0.75Sn0.25, are in a good correlation with the experimental data. From magnetic measurements and 57Fe Mössbauer spectrometry, a paramagnetic behavior down to 4.2 K was observed for TiFe1.33Sb, with a paramagnetic Curie-Weiss temperature of -8 K and an effective moment of 1.11µB per Fe. Thermoelectric (TE) properties were obtained for the four isopleths Ti1+xFe1.33-xSb, TiFe1.33Sb-TiCoSb, TiFe0.665Co0.5Sb-TiCoSb0.75Sn0.25 and TiFe0.29Co0.78Sb-TiCoSb0.75Sn0.25 by measurements of electrical resistivity (ρ), Seebeck coefficient (S) and thermal conductivity (λ) at temperatures from 300 K to 823 K allowing the calculation of the dimensionless figure of merit (ZT). Although p-type Ti1+xFe1.33-xSb indicates a semi-conducting behavior for the Fe rich composition (x = -0.133), the conductivity changes to a metallic type with increasing Ti content. The highest ZT = 0.3 at 800 K was found for the composition TiFe1.33Sb. The TE performance also increases with Fe/Co substitution and reaches ZT = 0.42 for TiCo0.5Fe0.665Sb. No further increase of the TE performance was observed for the Sb/Sn substituted compounds within the sections TiFe0.665Co0.5Sb-TiCoSb0.75Sn0.25 and TiFe0.33Co0.75Sb-TiCoSb0.75Sn0.25. However, ZT-values could be enhanced by about 12% via the optimization of the preparation route (ball-mill conditions and heat treatments).

Mechanical properties of non-centrosymmetric CePt3Si and CePt3B.

Elastic moduli, hardness (both at room temperature) and thermal expansion (4.2-670 K) have been experimentally determined for polycrystalline CePt3Si and its prototype compound CePt3B as well as for single-crystalline CePt3Si. Resonant ultrasound spectroscopy was used to determine elastic properties (Young's modulus E and Poisson's ratio ν) via the eigenfrequencies of the sample and the knowledge of sample mass and dimensions. Bulk and shear moduli were calculated from E and ν, and the respective Debye temperatures were derived. In addition, ab initio DFT calculations were carried out for both compounds. A comparison of parameters evaluated from DFT with those of experiments revealed, in general, satisfactory agreement. Positive and negative thermal expansion values obtained from CePt3Si single crystal data are fairly well explained in terms of the crystalline electric field model, using CEF parameters derived recently from inelastic neutron scattering. DFT calculations, in addition, demonstrate that the atomic vibrations keep almost unaffected by the antisymmetric spin-orbit coupling present in systems with crystal structures having no inversion symmetry. This is opposite to electronic properties, where the antisymmetric spin-orbit interaction has shown to distinctly influence features like the superconducting condensate of CePt3Si.

Ba-filled Ni-Sb-Sn based skutterudites with anomalously high lattice thermal conductivity.

Novel filled skutterudites BayNi4Sb12-xSnx (ymax = 0.93) have been prepared by arc melting followed by annealing at 250, 350 and 450 °C up to 30 days in vacuum-sealed quartz vials. Extension of the homogeneity region, solidus temperatures and structural investigations were performed for the skutterudite phase in the ternary Ni-Sn-Sb and in the quaternary Ba-Ni-Sb-Sn systems. Phase equilibria in the Ni-Sn-Sb system at 450 °C were established by means of Electron Probe Microanalysis (EPMA) and X-ray Powder Diffraction (XPD). With rather small cages Ni4(Sb,Sn)12, the Ba-Ni-Sn-Sb skutterudite system is perfectly suited to study the influence of filler atoms on the phonon thermal conductivity. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were used to measure their physical properties, i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. The resistivity data demonstrate a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from the maxima in the Seebeck coefficient data as a function of temperature. Single crystal X-ray structure analyses at 100, 200 and 300 K revealed the thermal expansion coefficients as well as Einstein and Debye temperatures for Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data were in accordance with the Debye temperatures obtained from the specific heat (4.4 K < T < 140 K) and Mössbauer spectroscopy (10 K < T < 290 K). Rather small atom displacement parameters for the Ba filler atoms indicate a severe reduction in the "rattling behaviour" consistent with the high levels of lattice thermal conductivity. The elastic moduli, collected from Resonant Ultrasonic Spectroscopy ranged from 100 GPa for Ni4Sb8.2Sn3.8 to 116 GPa for Ba0.92Ni4Sb6.7Sn5.3. The thermal expansion coefficients were 11.8 × 10(-6) K(-1) for Ni4Sb8.2Sn3.8 and 13.8 × 10(-6) K(-1) for Ba0.92Ni4Sb6.7Sn5.3. The room temperature Vickers hardness values vary within the range from 2.6 GPa to 4.7 GPa. Severe plastic deformation via high-pressure torsion was used to introduce nanostructuring; however, the physical properties before and after HPT showed no significant effect on the materials thermoelectric behaviour.

Ti8(Ti(x)Mn(1-x))6Mn39 ('TiMn(~4)'): a metallic spin fluctuation system.

The crystal structure of Ti(8)(Ti(x)Mn(1-x))(6)Mn(39), x = 0.187, was obtained from x-ray single-crystal diffraction data, confirming it to have rhombohedral symmetry (space group [Formula: see text]; a(hex) = 1.100 70(2) nm, c(hex) = 1.944 11(4) nm; R(F) = 0.0293) and isotypism with the prototype Mo(0.38)Cr(0.16)Co(0.46) (the so-called R-phase). On the basis of electron probe micro-analyser results and structure determination, the homogeneity region of the phase TiMn(~4) was determined for temperatures in the range 800 °C < T < 1200 °C and is in between 16.0 at.% Ti and 20 at.% Ti. Various physical properties, determined in the temperature range from ~2 K to room temperature, characterize the compound with composition TiMn(4.26) as a metallic spin fluctuation system, evidenced from a T(3)lnT dependence of the heat capacity in combination with large values of the electronic Sommerfeld constant of the order of 140 mJ mol(-1) K(-2). The occurrence of a small anomaly in the heat capacity and magnetization data around 10 K is attributed to a scenario involving spin freezing phenomena, since a fraction of the order of 10% of all Mn-Mn distances within the unit cell are above a critical distance, where Mn atoms carry a spontaneous magnetic moment.

Thermoelectric properties of Bi-added Co4Sb12 skutterudites.

Void filling in (I) Bi(x)-added Co(4)Sb(12) or (II) Sb/Bi substitution of Co(4)Sb(12-x)Bi(x) has been investigated for structural and thermoelectric properties evaluation. X-ray powder data Rietveld refinements combined with electron probe microanalyses showed a polycrystalline and practically Bi-free CoSb(3) skutterudite phase as the major constituent as well as a secondary Bi phase in the grain boundaries. For series I alloys, the electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature in the range from 450 to 750 K. The electrical conductivity of all the samples increased with increasing temperature, showing a semiconducting nature with smaller values of the Seebeck coefficient for higher Bi fractions. Conduction over the entire temperature range was found to arise from a single p-type carrier. Thermal conductivity showed a reduction with Bi added in all the samples, except for Bi(0.75)Co(4)Sb(12), and the lowest lattice thermal conductivity was found for a Bi-added fraction of 0.5. The maximum zT value of 0.53 at 632 K is higher than that of Co(4)Sb(12).

Compositional dependence of the thermoelectric properties of (Sr(x)Ba(x)Yb1₋2x)(y)Co4Sb12 skutterudites.

High temperature thermoelectric (TE) properties for triple-filled skutterudites (Sr(x)Ba(x)Yb1₋2x)(y)Co4Sb12 were investigated for alloy compositions in two sections of the system: (a) for x = 0.25 with a filling fraction y ranging from 0.1 to 0.25 and (b) for 0 < x < 0.5 and y = 0.11 + 0.259x. The representation of the figure of merit, ZT, as a function of skutterudite composition, defined the compositional range (0.25 < x < 0.4; 0.18 < y < 0.24) with ZT over 1.4 at 800 K. It was shown that an enhanced TE performance for these triple-filled skutterudites is caused by low electrical resistivities and low lattice thermal conductivities, as well as by a fine tuning of the chemical composition. Low temperature measurements for the samples with the highest ZT values showed that even a small change of the filler ratios changes the contribution of scattering effects, the carrier concentration and the mobility.