Nonlinear electric field effects at a continuous mott-hubbard transition

We characterize the non-Ohmic portion of the conductivity at temperatures T<1 K in the highly correlated transition metal chalcogenide Ni(S,Se)(2). Pressure tuning of the T = 0 metal-insulator transition reveals the influence of the quantum critical point and permits a direct determination of the dynamical critical exponent z = 2.7(+0.3)(-0.4). Within the framework of finite temperature scaling, we find that the spatial correlation length exponent nu and the conductivity exponent &mgr; differ.

Vortex flow and transverse flux screening at the bose glass transition

We study the vortex phase diagram in untwinned YBCO crystals with columnar defects. These randomly distributed defects are expected to induce a "Bose glass" phase of localized vortices exhibiting a vanishing resistance and Meissner effect for magnetic fields H( perpendicular) transverse to the columns. We directly observe the transverse Meissner effect using a Hall probe array. As predicted, the Meissner state breaks down at temperatures T(s) that decrease linearly as H( perpendicular) increases. However, T(s) lies far below the conventional melting temperature T(m) determined by a vanishing resistivity, suggesting a regime where vortices are effectively localized even when rotated off the columnar defects.

Quantum annealing of a disordered magnet

Traditional simulated annealing uses thermal fluctuations for convergence in optimization problems. Quantum tunneling provides a different mechanism for moving between states, with the potential for reduced time scales. Thermal and quantum annealing are compared in a model disordered magnet, where the effects of quantum mechanics can be tuned by varying an applied magnetic field. The results indicate that quantum annealing hastens convergence to the optimum state.

Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se)2

The transition metal chalcogenide Ni(S,Se)2 is one of the few highly correlated, Mott-Hubbard systems without a strong first-order structural distortion that normally cuts off the critical behavior at the metal-insulator transition. The zero-temperature (T) transition was tuned with pressure, and significant deviations were found near the quantum critical point from the usual T1/2 behavior of the conductivity characteristic of electron-electron interactions in the presence of disorder. The transport data for pressure and temperature below 1 kelvin could be collapsed onto a universal scaling curve.