Interfacial complexation driven three-dimensional assembly of cationic phosphorus dendrimers and graphene oxide sheets.

High content nitrogen, sulfur and phosphorus heteroatoms assembled in tree-like dendrimers (DG n ) are confined within the galleries of two-dimensional graphene oxide (GO). The presence of the ternary diethyl-N-ethyl-ammonium groups on the dendrimer peripheries ensures the exfoliation of graphene sheets thereby affording interfacially bridged, three-dimensional heteroatom-enriched graphene-based hybrid nanostructures (DG n -GO). Dendrimer generation (from 1 to 4) that reflects the bulkiness of these conceived nano-trees impacts increasingly the degree of dispersion-exfoliation and sheet desordering. The long-term stability of these aqueous suspensions associated with their handling flexibility allows uniform accommodation of the resulting hybrid materials as flame-retardants in bioplastics.

A novel 2-step ALD route to ultra-thin MoS2 films on SiO2 through a surface organometallic intermediate.

The lack of scalable-methods for the growth of 2D MoS2 crystals, an identified emerging material with applications ranging from electronics to energy storage, is a current bottleneck against its large-scale deployment. We report here a two-step ALD route with new organometallic precursors, Mo(NMe2)4 and 1,2-ethanedithiol (HS(CH2)2SH) which consists in the layer-by-layer deposition of an amorphous surface Mo(iv) thiolate at 50 °C, followed by a subsequent annealing at higher temperature leading to ultra-thin MoS2 nanocrystals (∼20 nm-large) in the 1-2 monolayer range. In contrast to the usual high-temperature growth of 2D dichalcogenides, where nucleation is the key parameter to control both thickness and uniformity, our novel two-step ALD approach enables chemical control over these two parameters, the growth of 2D MoS2 crystals upon annealing being ensured by spatial confinement and facilitated by the formation of a buffer oxysulfide interlayer.

Evidence for Charge Transfer at the Interface between Hybrid Phosphomolybdate and Epitaxial Graphene.

The interfacing of polyoxometalates and graphene can be considered to be an innovative way to generate hybrid structures that take advantage of the properties of both components. Polyoxometalates are redox-sensitive and photosensitive compounds with high temperature stability (up to 400 °C for some), showing tunable properties depending on the metal incorporated inside the complex. Graphene has a unique electronic band structure combined with good material properties for electrical and optical applications. The spontaneous, rather than electrochemical, functionalization of epitaxial graphene on SiC with Keggin phosphomolybdate derivative TBA3[PMo11O39{Sn(C6H4)C≡C(C6H4)N2}] (named K(Mo)Sn[N2(+)]) bearing a phenyl diazonium unit is investigated. Graphene decoration is evidenced by means of AFM, Raman, XPS, and cyclic voltammetry, indicating a successful immobilization of the polyoxomolybdate. The covalent bonding of the polyoxometalate to the graphene substrate can be deduced from the appearance of a D band in the Raman spectra and from the loss of mobility in the electrical conduction. High-resolution XPS spectra reveal an electron transfer from the graphene to the Mo complex. The comparison of charge-carrier density measurements before and after grafting supports the p-type doping effect, which is further evidenced by work function UPS measurements.

Doping characteristics of iodine on as-grown chemical vapor deposited graphene on Pt.

Using laboratory X-ray photoelectron emission microscopy (XPEEM), we investigated the doping efficiency and thermal stability of iodine on as-grown graphene on Pt. After iodine adsorption of graphene in saturated vapor of I2, monolayer and bilayer graphene exhibited work function of 4.93 eV and 4.87 eV, respectively. Annealing of the doped monolayer graphene at 100 °C led to desorption of hydrocarbons, which increased the work function of monolayer graphene by ~0.2 eV. The composition of the polyiodide complexes evolved upon a step-by-step annealing at temperatures from 100 °C to 300 °C while the work-function non-monotonically changed with decreasing iodine content. The iodine dopant was stable at relatively high temperature as a significant amount of iodine remained up to the annealing temperature of 350 °C.

Catalyst preparation for CMOS-compatible silicon nanowire synthesis.

Metallic contamination was key to the discovery of semiconductor nanowires, but today it stands in the way of their adoption by the semiconductor industry. This is because many of the metallic catalysts required for nanowire growth are not compatible with standard CMOS (complementary metal oxide semiconductor) fabrication processes. Nanowire synthesis with those metals that are CMOS compatible, such as aluminium and copper, necessitate temperatures higher than 450 degrees C, which is the maximum temperature allowed in CMOS processing. Here, we demonstrate that the synthesis temperature of silicon nanowires using copper-based catalysts is limited by catalyst preparation. We show that the appropriate catalyst can be produced by chemical means at temperatures as low as 400 degrees C. This is achieved by oxidizing the catalyst precursor, contradicting the accepted wisdom that oxygen prevents metal-catalysed nanowire growth. By simultaneously solving material compatibility and temperature issues, this catalyst synthesis could represent an important step towards real-world applications of semiconductor nanowires.