ABSTRACT
Indium oxide (In2O3) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of In2O3 by thermal atomic layer deposition (ALD) using our recently reported indium(III) triazenide precursor and H2O. A temperature interval with self-limiting growth was found between â¼270 and 385 °C with a growth per cycle of â¼1.0 Å. The deposited films were polycrystalline cubic In2O3 with In : O ratios of 1 : 1.2, and low levels of C and no detectable N impurities. The transmittance of the films was found to be >70% in visible light and the resistivity was found to be 0.2 mΩ cm. The high growth rates, low impurities, high optical transmittance, and low resistivity of these films give promise to this process being used for ALD of In2O3 films for future microelectronic displays.
ABSTRACT
Highly efficient photoelectrochemical (PEC) water oxidation under solar visible light is crucial for water splitting to produce hydrogen as a source of sustainable energy. Particularly, silver-based nanomaterials are important for PEC performance due to their surface plasmon resonance which can enhance the photoelectrochemical efficiency. However, the PEC of ZnO/Ag2WO4/AgBr with enhanced visible-light water oxidation has not been studied so far. Herein, we present a novel photoelectrodes based on ZnO/Ag2WO4/AgBr nanorods (NRs) for PEC application, which is prepared by the low-temperature chemical growth method and then by successive ionic layer adsorption and reaction (SILAR) method. The synthesized photoelectrodes were investigated by several characterization techniques, emphasizing a successful synthesis of the ZnO/Ag2WO4/AgBr heterostructure NRs with excellent photocatalysis performance compared to pure ZnO NRs photoelectrode. The significantly enhanced PEC was due to improved photogeneration and transportation of electrons in the heterojunction due to the synergistic effect of the heterostructure. This study is significant for basic understanding of the photocatalytic mechanism of the heterojunction which can prompt further development of novel efficient photoelectrochemical-catalytic materials.
ABSTRACT
A heteroleptic amidoalane precursor is presented as a more suitably designed candidate to replace trimethylaluminum (TMA) for atomic layer deposition of aluminum nitride (AlN). The lack of C-Al bonds and the strongly reducing hydride ligands in [AlH2(NMe2)]3 (1) were specifically chosen to limit impurities in target aluminum nitride (AlN) films. Compound 1 is made in a high yield, scalable synthesis involving lithium aluminum hydride and dimethylammonium chloride. It has a vapor pressure of 1 Torr at 40 °C and evaporates with negligible residual mass in thermogravimetric experiments. Ammonia (NH3) plasma and 1 in an atomic layer deposition (ALD) process produced crystalline AlN films above 200 °C with an Al:N ratio of 1.04. Carbon and oxygen impurities in resultant AlN films were reduced to <1% and <2%, respectively. By using a precursor with a rational and advantageous design, we can improve the material quality of AlN films compared to those deposited using the industrial standard trimethylaluminum and could reduce material cost by up to 2 orders of magnitude.
ABSTRACT
Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO2 surfaces whereas several hundred nanometers thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO2 surface. On the basis of such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition.
