ABSTRACT
We studied the impact of ionizing radiation at high dose levels (megagray, MGy) on the photometric budget of a radiation-resistant complementary metal oxide semi-conductor (CMOS)-based camera. This is achieved by measuring the radiation-induced degradation of each subpart, namely its illumination system, its optical system, and its CMOS image sensor. The acquired experimental results allow performing a rather realistic simulation of the radiation effects at the system level. Thanks to appropriate mitigation techniques, limited image darkening and color change are obtained at MGy dose levels. The presented results confirm the feasibility of a CMOS-based camera able to resist to MGy dose level of ionizing radiations with an acceptable degradation of the image quality, opening the way to its implementation in the most challenging harsh environments.
