ABSTRACT
Infrared solar cells are regarded as candidates for expanding the solar spectrum of c-Si cells, and the window electrodes are usually transparent conductive oxide (TCO) such as widely used indium tin oxide material. However, due to the low transmittance of the TCO in the near-infrared region, most near-infrared light cannot penetrate the electrode and be absorbed by the active layer. Here, the propose a simple procedure to fabricate the window materials with high near-infrared transmittance and high electrical conductivity, namely the hydrogen-doped indium oxide (IHO) films prepared by room temperature magnetron sputtering. The low-temperature annealed IHO conductive electrodes exhibit high mobility of 98 cm2 V-1 s-1 and high infrared transmittance of 85.2% at 1300 nm, which endows the lead quantum dot infrared solar cell with an improved short-circuit current density of 37.2 mA cm-2 and external quantum efficiency of 70.22% at 1280 nm. The proposed preparation process is simple and compatible with existing production lines, which gifts the IHO transparent conductive film great potential in broad applications that simultaneously require high infrared transmittance and high conductivity.
