ABSTRACT
Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge. Regarding the graphene/metal contact intensive research was done and recently substantial advancements were made towards contact resistances applicable for electronic devices. Generally speaking the crucial issues for graphene integration are identified today and the corresponding research tasks can be clearly defined.
ABSTRACT
Integration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10(13) atoms/cm(2). These metal impurities appear to be partially mobile upon thermal treatment, as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics, these results reveal that further progress in synthesis, handling, and cleaning of graphene is required to advance electronic and optoelectronic applications.
ABSTRACT
Reduced graphene oxide (rGO) was investigated as a material for use in chemiresistive gas sensors. The carbon nanomaterial was transferred onto a silicon wafer with interdigital gold electrodes. Spin coating turned out to be the most reliable transfer technique, resulting in consistent rGO layers of reproducible quality. Fast changes in the electrical resistance at a low operating temperature of 85 °C could be detected for the gases NO(2), CH(4) and H(2). Especially upon adsorption of NO(2) the high signal changes allowed a minimum detection of 0.3 ppm (S/N = 3). To overcome the poor selectivity, rGO was chemically functionalized with octadecylamine, or modified by doping with metal nanoparticles such as Pd and Pt, and also metal oxides such as MnO(2), and TiO(2). The different response patterns for six different materials allowed the discrimination of all of the test gases by pattern recognition based on principal component analysis.
