ABSTRACT
The screened modified Kratzer potential (SMKP) model is utilized to scrutinize the impacts of an applied magnetic field (MF) on the binding energies and linear and nonlinear optical properties spherical GaAs quantum dot with donor impurity (DI). To accomplish this goal, we have used the diagonalization method to numerically solve the Schrödinger equation under the effective mass approximation for obtaining the electron energy levels and related electronic wave functions. The expressions used for evaluating linear, third-order nonlinear, and total optical absorption coefficients and relative refractive index changes were previously derived within the compact density matrix method. It has been shown here that the MF and DI impacts the characteristics of the absorption coefficients and the refractive index changes. This study's results will find application in optoelectronics and related areas.
