ABSTRACT
Numerical simulations were used to study the transmittances (Ts) of ZnO/Al/ZnO (ZAZ) films with Al thicknesses between â¼1 and 40 nm. The simulations are validated using previously reported experimental results. Multilayers with Al thicknesses between â¼1 and 10 nm are shown to have average Ts between â¼75% and 90%, which decreased farther to â¼63 and 41% for the Al layer thicknesses of 20 and 40 nm, respectively. Variations in the ZnO thickness between â¼10 and 100 nm are shown to have little effect on the optical properties of the model multilayers for a given Al thickness. The reliability of the numerical simulations is tested by comparing them with experimental measurements on films produced using similar interlayer thicknesses. These are also shown to be comparable to the performance characteristics of indium tin oxide (ITO) anodes that are used currently in organic solar cells (OSCs) and organic light emitting diodes (OLEDs).
