Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films.

We report the optical properties of GaSbBi layers grown on GaSb (100) substrates with different bismuth contents of 5.8 and 8.0% Bi. Fourier-transform photoluminescence spectra were determined to identify the band gaps of the studied materials. Further temperature- and power-dependent photoluminescence measurements indicated the presence of localized states connected to bismuth clustering. Finally, time-resolved photoluminescence measurements based on single-photon counting allowed the determination of characteristic photoluminescence decay time constants. Because of the increasing bismuth content and clustering effects, an increase in the time constant was observed.

Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings.

We present an optical spectroscopic study of InGaAs/AlInAs active region of quantum cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with subwavelength gratings fabricated by reactive ion etching. Fourier-transformed photoluminescence measurements were used to compare the emission properties of structures before and after processing the gratings. Our results demonstrate a significant increase of the photoluminescence intensity related to intersubband transitions in the mid-infrared, which is attributed to coupling with the grating modes via so called photonic Fano resonances. Our findings demonstrate a promising method for enhancing the emission in optoelectronic devices operating in a broad range of application-relevant infrared.

Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy.

The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the waveguide claddings. Determining those in a nondestructive manner is, on the one hand, demanded for the fabrication process efficiency, but on the other, challenging experimentally, especially for complex multilayer systems. Here, we present the results of carrier concentration determination in In0.53Ga0.47As layers, designed to be a material forming quantum cascade laser active areas, using a direct and contactless method utilizing the Berreman effect, and employing Fourier-transform infrared (FTIR) spectroscopy. The results allowed us to precisely determine the free carrier concentration versus changes in the nominal doping level and provide feedback regarding the technological process by indicating the temperature adjustment of the dopant source.