1.
Phys Rev Lett
; 90(18): 186602, 2003 May 09.
Article
in English
| MEDLINE
| ID: mdl-12786034
ABSTRACT
Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this behavior in terms of disorder-driven statistical variations in magnetoresistance with a finite probability of inversion due to resonant tunneling.