Slow thermal equilibration in methylammonium lead iodide revealed by transient mid-infrared spectroscopy.

Hybrid organic-inorganic perovskites are emerging semiconductors for cheap and efficient photovoltaics and light-emitting devices. Different from conventional inorganic semiconductors, hybrid perovskites consist of coexisting organic and inorganic sub-lattices, which present disparate atomic masses and bond strengths. The nanoscopic interpenetration of these disparate components, which lack strong electronic and vibrational coupling, presents fundamental challenges to the understanding of charge and heat dissipation. Here we study phonon population and equilibration processes in methylammonium lead iodide (MAPbI3) by transiently probing the vibrational modes of the organic sub-lattice following above-bandgap optical excitation. We observe inter-sub-lattice thermal equilibration on timescales ranging from hundreds of picoseconds to a couple of nanoseconds. As supported by a two-temperature model based on first-principles calculations, the slow thermal equilibration is attributable to the sequential phonon populations of the inorganic and organic sub-lattices, respectively. The observed long-lasting thermal non-equilibrium offers insights into thermal transport and heat management of the emergent hybrid material class.

Cross-plane coherent acoustic phonons in two-dimensional organic-inorganic hybrid perovskites.

Two-dimensional Ruddlesden-Popper organic-inorganic hybrid layered perovskites (2D RPs) are solution-grown semiconductors with prospective applications in next-generation optoelectronics. The heat-carrying, low-energy acoustic phonons, which are important for heat management of 2D RP-based devices, have remained unexplored. Here we report on the generation and propagation of coherent longitudinal acoustic phonons along the cross-plane direction of 2D RPs, following separate characterizations of below-bandgap refractive indices. Through experiments on single crystals of systematically varied perovskite layer thickness, we demonstrate significant reduction in both group velocity and propagation length of acoustic phonons in 2D RPs as compared to the three-dimensional methylammonium lead iodide counterpart. As borne out by a minimal coarse-grained model, these vibrational properties arise from a large acoustic impedance mismatch between the alternating layers of perovskite sheets and bulky organic cations. Our results inform on thermal transport in highly impedance-mismatched crystal sub-lattices and provide insights towards design of materials that exhibit highly anisotropic thermal dissipation properties.

Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2.

Emerging two-dimensional (2-D) materials such as transition-metal dichalcogenides show great promise as viable alternatives for semiconductor and optoelectronic devices that progress beyond silicon. Performance variability, reliability, and stochasticity in the measured transport properties represent some of the major challenges in such devices. Native strain arising from interfacial effects due to the presence of a substrate is believed to be a major contributing factor. A full three-dimensional (3-D) mapping of such native nanoscopic strain over micron length scales is highly desirable for gaining a fundamental understanding of interfacial effects but has largely remained elusive. Here, we employ coherent X-ray diffraction imaging to directly image and visualize in 3-D the native strain along the (002) direction in a typical multilayered (∼100-350 layers) 2-D dichalcogenide material (WSe2) on silicon substrate. We observe significant localized strains of ∼0.2% along the out-of-plane direction. Experimentally informed continuum models built from X-ray reconstructions trace the origin of these strains to localized nonuniform contact with the substrate (accentuated by nanometer scale asperities, i.e., surface roughness or contaminants); the mechanically exfoliated stresses and strains are localized to the contact region with the maximum strain near surface asperities being more or less independent of the number of layers. Machine-learned multimillion atomistic models show that the strain effects gain in prominence as we approach a few- to single-monolayer limit. First-principles calculations show a significant band gap shift of up to 125 meV per percent of strain. Finally, we measure the performance of multiple WSe2 transistors fabricated on the same flake; a significant variability in threshold voltage and the "off" current setting is observed among the various devices, which is attributed in part to substrate-induced localized strain. Our integrated approach has broad implications for the direct imaging and quantification of interfacial effects in devices based on layered materials or heterostructures.

Microscopic Evaluation of Electrical and Thermal Conduction in Random Metal Wire Networks.

Ideally, transparent heaters exhibit uniform temperature, fast response time, high achievable temperatures, low operating voltage, stability across a range of temperatures, and high optical transmittance. For metal network heaters, unlike for uniform thin-film heaters, all of these parameters are directly or indirectly related to the network geometry. In the past, at equilibrium, the temperature distributions within metal networks have primarily been studied using either a physical temperature probe or direct infrared (IR) thermography, but there are limits to the spatial resolution of these cameras and probes, and thus, only average regional temperatures have typically been measured. However, knowledge of local temperatures within the network with a very high spatial resolution is required for ensuring a safe and stable operation. Here, we examine the thermal properties of random metal network thin-film heaters fabricated from crack templates using high-resolution IR microscopy. Importantly, the heaters achieve predominantly uniform temperatures throughout the substrate despite the random crack network structure (e.g., unequal sized polygons created by metal wires), but the temperatures of the wires in the network are observed to be significantly higher than the substrate because of the significant thermal contact resistance at the interface between the metal and the substrate. Last, the electrical breakdown mechanisms within the network are examined through transient IR imaging. In addition to experimental measurements of temperatures, an analytical model of the thermal properties of the network is developed in terms of geometrical parameters and material properties, providing insights into key design rules for such transparent heaters. Beyond this work, the methods and the understanding developed here extend to other network-based heaters and conducting films, including those that are not transparent.

Theory of Thermal Relaxation of Electrons in Semiconductors.

We compute the transient dynamics of phonons in contact with high energy "hot" charge carriers in 12 polar and nonpolar semiconductors, using a first-principles Boltzmann transport framework. For most materials, we find that the decay in electronic temperature departs significantly from a single-exponential model at times ranging from 1 to 15 ps after electronic excitation, a phenomenon concomitant with the appearance of nonthermal vibrational modes. We demonstrate that these effects result from slow thermalization within the phonon subsystem, caused by the large heterogeneity in the time scales of electron-phonon and phonon-phonon interactions in these materials. We propose a generalized two-temperature model accounting for phonon thermalization as a limiting step of electron-phonon thermalization, which captures the full thermal relaxation of hot electrons and holes in semiconductors. A direct consequence of our findings is that, for semiconductors, information about the spectral distribution of electron-phonon and phonon-phonon coupling can be extracted from the multiexponential behavior of the electronic temperature.