Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films.

Significant power conversion efficiency improvements have recently been achieved for thin-film solar cells based on a variety of polycrystalline absorbers, including perovskites, CdTe, and Cu(In,Ga)Se2 (CIGS). The passivation of grain boundaries (GBs) through (post-deposition) treatments is a crucial step for this success. For the case of CIGS, the introduction of a potassium fluoride post-deposition treatment (KF-PDT) has boosted their power conversion efficiency to the best performance of all polycrystalline solar cells. Direct and indirect effects of potassium at the interface and interface-near region in the CIGS layer are thought to be responsible for this improvement. Here, we show that also the electronic properties of the GBs are beneficially modified by the KF-PDT. We used Kelvin probe force microscopy to study the effect of the KF-PDT on the CIGS surface by spatially resolved imaging of the surface potential. We find a clear difference for the GB electronic properties: the KF-PDT increases the band bending at GBs by about 70% and results in a narrower distribution of work function values at the GBs. This effect of the KF-PDT on the GB electronic properties is expected to contribute to the improved efficiency values observed for CIGS thin-film solar cells with KF-PDT.

Direct evidence for a reduced density of deep level defects at grain boundaries of Cu(In,Ga)Se2 thin films.

The unusual optoelectronic properties of chalcopyrite grain boundaries (GBs) have become the subject of an intense debate in recent years. In this work we investigate the defect density at GBs of Cu(In,Ga)Se2 by scanning tunneling spectroscopy. Contrary to our expectation, our results give evidence for a reduced density of deep level defects and point to an increased density of defect levels in resonance with the lower conduction band at GBs. Our findings imply low recombination activity at GBs, and thus can explain the low impact of GBs on the efficiency of chalcopyrite based solar cells.

The influence of surface topography on Kelvin probe force microscopy.

Long-range electrostatic forces govern the imaging mechanism in electrostatic force microscopy as well as in Kelvin probe force microscopy. To improve the analysis of such images, simulations of the electrostatic field distribution have been performed in the past using a flat surface and a cone-shaped tip. However, the electrostatic field distribution between a tip and a sample depends strongly on the surface topography, which has been neglected in previous studies. It is therefore of general importance to study the influence of sample topography features on Kelvin probe force microscopy images, which we address here by performing finite element simulations. We show how the surface potential measurement is influenced by surface steps and surface grooves, considering potential variations in the form of a potential peak and a potential step. The influence of the topography on the measurement of the surface potential is found to be rather small compared to a typical experimental resolution. Surprisingly, in the case of a coinciding topography and potential step an improvement of the potential profile due to the inclusion of the topography is observed. Finally, based on the obtained results, suggestions for the realization of KPFM measurement are given.

Surface photovoltage spectroscopy in a Kelvin probe force microscope under ultrahigh vacuum.

Surface photovoltage (SPV) spectroscopy is a common method for optoelectronic semiconductor characterization. Kelvin probe force microscopy has developed into a widely used tool for nanoscale characterization of semiconductors, metals, and insulators. We present here a setup for the measurement of local SPV spectra in a Kelvin probe force microscope operated under ultrahigh vacuum conditions. The atomic force microscope tip can be placed to any desired position with nanometer precision and the SPV can then be recorded as a function of the wavelength of the illuminating light. We introduce the realization of the setup and present the SPV spectra on two test systems, an epitaxially grown GaAs/CuGaSe(2) junction and a Zn-doped CuInS(2) polycrystalline thin film.

Surface photovoltage analysis of thin CdS layers on polycrystalline chalcopyrite absorber layers by Kelvin probe force microscopy.

An extensive Kelvin probe force microscopy study in an ultrahigh vacuum has been undertaken to examine the influence of growth modifications of a few nm thick CdS buffer layers in thin film chalcopyrite solar cells. In regions around the grain boundaries of the polycrystalline Cu(In,Ga)Se(2) substrate a lowering of the work function extending to about 200 nm away from this vertical interface was observed. This electrical inhomogeneity depends strongly on the Cu(In,Ga)Se(2) surface condition and is interpreted by a diffusion process along the substrate grain boundaries. Our results contribute to the understanding of the crucial role of the several nm thick CdS layer for improving the photovoltaic performance of chalcopyrite thin film solar cells.