ABSTRACT
Recent progress in polarization-resolved photodetection based on low-symmetry 2D materials has formed the basis of cutting-edge optoelectronic devices, including quantum optical communication, 3D image processing, and sensing applications. Here, we report an optical polarization-resolving photodetector (PD) fabricated from multilayer semiconducting CrSBr single crystals with high structural anisotropy. We have demonstrated self-powered photodetection due to the formation of Schottky junctions at the Au-CrSBr interfaces, which also caused the photocurrent to display a position-sensitive and binary nature. The self-biased CrSBr PD showed a photoresponsivity of â¼0.26 mA/W with a detectivity of 3.4 × 108 Jones at 514 nm excitation of fluency (0.42 mW/cm2) under ambient conditions. The optical polarization-induced photoresponse exhibits a large dichroic ratio of 3.4, while the polarization is set along the a- and the b-axes of single-crystalline CrSBr. The PD also showed excellent stability, retaining >95% of the initial photoresponsivity in ambient conditions for more than five months without encapsulation. Thus, we demonstrate CrSBr as a fascinating material for ultralow-powered optical polarization-resolving optoelectronic devices for cutting-edge technology.
ABSTRACT
We report circularly polarised emission, with helicity opposite to the optical excitation, from a van der Waals heterostructure (HS) consisting of a monolayer MoS2 and three-layer WS2. Selective excitation of the MoS2 layer confirms that this cross-polarized emission is due to the charge transfer from the WS2 layers to the MoS2 layer. We propose that the high levels of n-doping in the constituent layers due to sulphur vacancies and defects give rise to an enhanced transition rate of electrons from the k valley of WS2 to the k' valley of MoS2, which leads to the emission, counter polarized to the excitation. Simulations based on the rate equation model support this conclusion.
