ABSTRACT
Despite the significant achievements and successes of medical science, the incidence of influenza, its complications and socio-economic damage do not decrease, remaining at a high level. In the clinic of Mechnikov North-Western State Medical University from December 2018 to February 2019, from 89 hospitalized patients with pneumonia/acute bronchitis viral etiology was determined in 29 (32%). In 27 (97%) patients it was virus A (H1N1), in 2 cases A (H3N2). 9 (31%) patients were sever and were hospitalized in intensive care unit. The case of severe viral pneumonia caused by A (H3N2) complicated by fulminant pulmonary hemorrhage with a lethal outcome is presented.
Subject(s)
Influenza A Virus, H1N1 Subtype , Influenza, Human , Pneumonia, Bacterial , Pneumonia, Viral , Respiratory Distress Syndrome , Hemorrhage/etiology , Humans , Influenza A Virus, H3N2 Subtype , Influenza, Human/complications , Pneumonia, Viral/diagnosisABSTRACT
The interface formed between two wide band-gap insulators, NdGaO3 and SrTiO3 renders metallic behavior, similar to the LaAlO3/SrTiO3 interface. The interface conductivity depends strongly upon oxygen pressure during growth of the NdGaO3 film and subsequent annealing in oxygen. The conductivity of a (10 uc) NdGaO3/SrTiO3 film, pulsed laser deposited at low (pO2 = 10(-4) mbar) oxygen pressure, vanishes after annealing at 600 °C in oxygen atmosphere. For a similar interface formed at high oxygen pressure (pO2 = 0.3 mbar), the metallic conductivity remains also after post annealing. Medium energy ion spectroscopy (MEIS) in random (non-channeling) direction showed that a substantial part of Ga is missing in films deposited at low pressure, while optimal stoichiometry is approached in films deposited at high pressure. Aligned (channeling) MEIS likewise show that the Ga/Nd ratio approaches the stoichiometric value as the pressure is increased from 10(-4) to 0.3 mbar. This is interpreted as due to gallium desorption from a growing film at high temperature and low oxygen pressure while the re-evaporation of gallium is considerably suppressed at higher pressure. We discuss the possible role of stoichiometry on electrical transport properties.
ABSTRACT
Medium-energy ion spectroscopy (MEIS) has been used to study the depth profile and deduce the distribution of possible cationic substitutions in LaAlO3/SrTiO3 (LAO/STO) heterointerfaces. Analysis of La and Sr peaks in aligned and random MEIS spectra indicates that the surface layers of LAO on an STO substrate are not homogeneous and stoichiometric if the film thickness is less than 4 unit cell layers. This is possibly caused by a redistribution of La and Sr at the interface. Kelvin probe force microscopy reveals an inhomogeneous distribution of the surface potential in a 4 unit cell LAO film, indicating micrometer-sized regions of different compositions. Our findings provide a novel view on the microstructural origin of the electrically conductive interfaces.
