ABSTRACT
The present study develops a general framework for weak antilocalization (WAL) in a three-dimensional (3D) system, which can be applied for a consistent description of longitudinal resistivity [Formula: see text] and Hall resistivity [Formula: see text] over a wide temperature (T) range. Compared to the previous approach Vu et al. (Phys Rev B 100:125162, 2019), which assumes infinite phase coherence length (lÏ) and a zero spin-orbit scattering length (lSO), the present framework is more general, covering high T and the intermediate spin-orbit coupling strength. Based on the new approach, the [Formula: see text] and [Formula: see text] of the Dirac semimetal Bi0.97Sb0.03 was analyzed over a wide T range from 1.7 to 300 K. The present framework not only explains the main features of the experimental data but also enables one to estimate lÏ and lSO at different temperatures. The lÏ has a power-law T dependence at high T and saturates at low T. In contrast, the lSO shows negligible T dependence. Because of the different T dependence, a crossover occurs from the lSO-dominant low-T to the lÏ-dominant high-T regions. Accordingly, the hallmark features of weak antilocalization (WAL) in [Formula: see text] and [Formula: see text] are gradually suppressed across the crossover with increasing T. The present theory describes both low-T and high-T regions successfully, which is impossible in the previous approximate approach. This work offers insights for understanding quantum electrical transport phenomena and their underlying physics, particularly when multiple WAL length scales are competing.
ABSTRACT
Magnetotransport studies have established the existence of exotic electronic properties in materials of technological and fundamental interest. However, measurements of the Shubnikov-de Haas oscillations, intended to reveal information about Fermi surfaces (FSs), have mostly been carried out in magnetic fields perpendicular to the applied currents. Here, using magnetic fields not only perpendicular but also parallel to the applied currents in a given contact configuration, we investigated the anisotropic magnetotransport and the anisotropic FS properties of Bi2-xSnxTe3(0 ⩽x⩽ 0.0075) and Bi2Se3. While the magnetotransport properties of Bi2Te3and Bi2Se3were nearly isotropic, Bi1.995Sn0.005Te3exhibited quite anisotropic features. These observations are attributed to the nonparabolicity of the associated bands, which evolved to more anisotropic band structures with Sn concentration. This sensitivity of the band anisotropy was rather unexpected because only a small number of dopants are known to increase disorder levels in the degenerate region. Our approach, using two different magnetic field directions in the measurements of the Shubnikov-de Haas oscillations, is a simple and easily adoptable method for shedding more light on the FSs of functional materials.
ABSTRACT
This study reports the key ingredients that influence the orientation and stability of a α-Fe2O3 layer that grows on a metastable ε-Fe2O3 during pulsed laser deposition. Depending on the substrate temperature, two different α-Fe2O3 orientations arise on the ε-Fe2O3 (004) surface. At 800 °C, (2-10)α-oriented α-Fe2O3 is stabilized, whereas at 700 °C, (006)α orientation occurs. The (2-10)α-oriented α-Fe2O3 layer possesses an interface with densely packed Fe ions with presumably considerable number of oxygen vacancies. On the other hand, the (006)α-oriented α-Fe2O3 layer is stabilized, as in the case of the YSZ (100) substrate, due to the domain pattern with an in-plane rhombic shape, which is known to become an effective nucleation site. Growth with the unexpected (2-10)α orientation can be understood based on a model that takes into account the surface energy as the dominant factor, which mainly stems from the presence of dangling bonds on the surface and the atomic vibration of the surface atoms. As the surface is one of the critical elements related to the specific functionality of a material, the present study will offer valuable insights into the designs of functional devices with novel surface properties.
