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1.
Sci Rep ; 11(1): 23519, 2021 12 07.
Article in English | MEDLINE | ID: mdl-34876656

ABSTRACT

The resistive switching (RS) mechanism is resulted from the formation and dissolution of a conductive filament due to the electrochemical redox-reactions and can be identified with a pinched hysteresis loop on the I-V characteristic curve. In this work, the RS behaviour was demonstrated using a screen-printed electrode (SPE) and was utilized for creatinine sensing application. The working electrode (WE) of the SPE has been modified with a novel small organic molecule, 1,4-bis[2-(5-thiophene-2-yl)-1-benzothiopene]-2,5-dioctyloxybenzene (BOBzBT2). Its stability at room temperature and the presence of thiophene monomers were exploited to facilitate the cation transport and thus, affecting the high resistive state (HRS) and low resistive state (LRS) of the electrochemical cell. The sensor works based on the interference imposed by the interaction between the creatinine molecule and the radical cation of BOBzBT2 to the conductive filament during the Cyclic Voltammetry (CV) measurement. Different concentrations of BOBzBT2 dilution were evaluated using various concentrations of non-clinical creatinine samples to identify the optimised setup of the sensor. Enhanced sensitivity of the sensor was observed at a high concentration of BOBzBT2 over creatinine concentration between 0.4 and 1.6 mg dL-1-corresponding to the normal range of a healthy individual.

2.
ACS Appl Mater Interfaces ; 6(7): 5308-18, 2014 Apr 09.
Article in English | MEDLINE | ID: mdl-24636005

ABSTRACT

This paper reports the utilization of ZnO nanorod arrays (NRAs) doped with various concentrations of Ga (0, 0.5, 1, 2, and 3 at %) as electron acceptors in organic solar cells. The donor, poly(3-hexylthiophene) (P3HT), was spin coated onto Ga-doped ZnO NRAs that were grown on fluorine-doped tin oxide (FTO) substrates, followed by the deposition of a Ag electrode by a magnetron sputtering method. Adjusting the Ga precursor concentration allowed for the control of the structural and optical properties of ZnO NRAs. The short circuit current density increased with increasing Ga concentration from 0 to 1 at %, mainly because of improved exciton dissociation and increased charge extraction. Meanwhile, the reduced charge recombination and lower hole leakage current led to an increase in the open circuit voltage with Ga concentrations up to 1 at %. The device with the optimum Ga concentration of 1 at % exhibited power conversion efficiency nearly three times higher compared to the device without Ga doping. This finding suggests that the incorporation of Ga can be a simple and effective approach to improve the photovoltaic performance of organic solar cells.

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