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1.
Pressure-Induced Crossover from Long- to Short-Range Order in Compositionally Disordered Soft Mode Ferroelectrics.
Samara GA.
Phys Rev Lett ; 77(2): 314-317, 1996 Jul 08.
Article in English | MEDLINE | ID: mdl-10062420
2.
Effects of pressure and ambient species on orientational ordering in solid C70.
Samara GA; Hansen LV; Morosin B; Schirber JE.
Phys Rev B Condens Matter ; 53(9): 5211-5216, 1996 Mar 01.
Article in English | MEDLINE | ID: mdl-9984124
3.
Negative pressure effects in high-pressure oxygen-intercalated C60.
Schirber JE; Assink RA; Samara GA; Morosin B; Loy D.
Phys Rev B Condens Matter ; 51(21): 15552-15554, 1995 Jun 01.
Article in English | MEDLINE | ID: mdl-9978514
4.
Strong quantum-size effects in a layered semiconductor: MoS2 nanoclusters.
Wilcoxon JP; Samara GA.
Phys Rev B Condens Matter ; 51(11): 7299-7302, 1995 Mar 15.
Article in English | MEDLINE | ID: mdl-9977297
5.
Phosphorus doping of boron carbides.
Aselage TL; Emin D; Samara GA; Tallant DR; Van Deusen SB; Eatough MO; Tardy HL; Venturini EL; Johnson SM.
Phys Rev B Condens Matter ; 48(16): 11759-11766, 1993 Oct 15.
Article in English | MEDLINE | ID: mdl-10007512
6.
ac hopping conductivities, dielectric constants, and reflectivities of boron carbides.
Samara GA; Tardy HL; Venturini EL; Aselage TL; Emin D.
Phys Rev B Condens Matter ; 48(3): 1468-1477, 1993 Jul 15.
Article in English | MEDLINE | ID: mdl-10008506
7.
Effects of pressure and ambient species on the orientational ordering in solid C60.
Samara GA; Hansen LV; Assink RA; Morosin B; Schirber JE; Loy D.
Phys Rev B Condens Matter ; 47(8): 4756-4764, 1993 Feb 15.
Article in English | MEDLINE | ID: mdl-10006625
8.
Breathing-mode relaxation associated with electron emission and capture processes of EL2 in GaAs.
Samara GA; Vook DW; Gibbons JF.
Phys Rev Lett ; 68(10): 1582-1585, 1992 Mar 09.
Article in English | MEDLINE | ID: mdl-10045168
9.
Pressure dependence of the orientational ordering in solid C60.
Samara GA; Schirber JE; Morosin B; Hansen LV; Loy D; Sylwester AP.
Phys Rev Lett ; 67(22): 3136-3139, 1991 Nov 25.
Article in English | MEDLINE | ID: mdl-10044650
10.
Pressure dependence of the E2 and E1 deep levels in GaAs, GaP, and their alloys.
Samara GA; Biefeld RM; Dawson LR; Zipperian TE; Barnes CE.
Phys Rev B Condens Matter ; 43(8): 6772-6775, 1991 Mar 15.
Article in English | MEDLINE | ID: mdl-9998127
11.
Temperature and frequency dependences of the dielectric properties of YBa2Cu3O6+x (x
Samara GA; Hammetter WF; Venturini EL.
Phys Rev B Condens Matter ; 41(13): 8974-8980, 1990 May 01.
Article in English | MEDLINE | ID: mdl-9993238
12.
Pressure dependence of deep electronic levels in semiconductors: Phosphorus-vacancy pair (or Si E center) and divacancy in silicon.
Samara GA.
Phys Rev B Condens Matter ; 39(17): 12764-12774, 1989 Jun 15.
Article in English | MEDLINE | ID: mdl-9948148
13.
Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon.
Samara GA.
Phys Rev B Condens Matter ; 39(15): 11001-11010, 1989 May 15.
Article in English | MEDLINE | ID: mdl-9947913
14.
Reply to "Comment on volume relaxation around defects in silicon upon electron emission"
Samara GA; Barnes CE.
Phys Rev B Condens Matter ; 38(9): 6318, 1988 Sep 15.
Article in English | MEDLINE | ID: mdl-9947101
15.
Breathing-mode lattice relaxation associated with the vacancy and phosphorous-vacancy-pair (E-center) defect in silicon.
Samara GA.
Phys Rev B Condens Matter ; 37(14): 8523-8526, 1988 May 15.
Article in English | MEDLINE | ID: mdl-9944210
16.
Pressure dependence of deep electronic levels in semiconductors: The oxygen-vacancy pair (or A center) in silicon.
Samara GA.
Phys Rev B Condens Matter ; 36(9): 4841-4848, 1987 Sep 15.
Article in English | MEDLINE | ID: mdl-9943501
17.
Pressure-induced suppression of the proton-glass phase and isotope effects in Rb1-x(NH4)xH2PO4.
Samara GA; Terauchi H.
Phys Rev Lett ; 59(3): 347-350, 1987 Jul 20.
Article in English | MEDLINE | ID: mdl-10035737
18.
Pressure dependence of impurity levels in semiconductors: The deep gold acceptor level and shallow donor and acceptor levels in silicon.
Samara GA; Barnes CE.
Phys Rev B Condens Matter ; 35(14): 7575-7584, 1987 May 15.
Article in English | MEDLINE | ID: mdl-9941062
19.
Lattice relaxation accompanying carrier capture and emission by deep electronic levels in semiconductors.
Samara GA; Barnes CE.
Phys Rev Lett ; 57(16): 2069-2072, 1986 Oct 20.
Article in English | MEDLINE | ID: mdl-10033624
20.
Pressure dependence of proton glass freezing in Rb1-x(NH4)xH2PO4.
Samara GA; Schmidt VH.
Phys Rev B Condens Matter ; 34(3): 2035-2037, 1986 Aug 01.
Article in English | MEDLINE | ID: mdl-9939881
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