ABSTRACT
The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices1. As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting materials to their full potential and, ultimately, further miniaturization2. For example, the carrier injection through tunnelling junctions dominates the channel resistance3, whereas the high parasitic capacitances drastically limit the maximum operating frequency4. In addition, these ultra-scaled devices can only hold a few volts due to the extremely high electric fields, which limits their maximum delivered power5,6. Here we challenge such traditional limitations and propose the concept of electronic metadevices, in which the microscopic manipulation of radiofrequency fields results in extraordinary electronic properties. The devices operate on the basis of electrostatic control of collective electromagnetic interactions at deep subwavelength scales, as an alternative to controlling the flow of electrons in traditional devices, such as diodes and transistors. This enables a new class of electronic devices with cutoff frequency figure-of-merit well beyond ten terahertz, record high conductance values, extremely high breakdown voltages and picosecond switching speeds. This work sets the stage for the next generation of ultrafast semiconductor devices and presents a new paradigm that potentially bridges the gap between electronics and optics.
ABSTRACT
The broad applications of ultrawide-band signals and terahertz waves in quantum measurements1,2, imaging and sensing techniques3,4, advanced biological treatments5, and very-high-data-rate communications6 have drawn extensive attention to ultrafast electronics. In such applications, high-speed operation of electronic switches is challenging, especially when high-amplitude output signals are required7. For instance, although field-effect and bipolar junction devices have good controllability and robust performance, their relatively large output capacitance with respect to their ON-state current substantially limits their switching speed8. Here we demonstrate a novel on-chip, all-electronic device based on a nanoscale plasma (nanoplasma) that enables picosecond switching of electric signals with a wide range of power levels. The very high electric field in the small volume of the nanoplasma leads to ultrafast electron transfer, resulting in extremely short time responses. We achieved an ultrafast switching speed, higher than 10 volts per picosecond, which is about two orders of magnitude larger than that of field-effect transistors and more than ten times faster than that of conventional electronic switches. We measured extremely short rise times down to five picoseconds, which were limited by the employed measurement set-up. By integrating these devices with dipole antennas, high-power terahertz signals with a power-frequency trade-off of 600 milliwatts terahertz squared were emitted, much greater than that achieved by the state of the art in compact solid-state electronics. The ease of integration and the compactness of the nanoplasma switches could enable their implementation in several fields, such as imaging, sensing, communications and biomedical applications.
