A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner.

In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented. The design is based on a three-stage architecture and was implemented using the D01GH technology provided by OMMIC foundry. Details on the architecture definition and design process to maximize delivered power are provided along with stability and thermal analyses. To optimize the amplifier performance, an asymmetry was included at the output combiner. Experimental results show that the HPA achieves a 39.5 dBm pulsed-mode output power, a peak linear gain of 23 dB, a drain efficiency of 27%, and good input/output matching in the 16-19 GHz frequency range. The chip area is 5 × 3.5 mm2 and for the measurements was mounted on a custom-made module. These results demonstrate that GaN-on-Si-based Solid-State Power Amplifiers (SSPAs) can be used for the implementation of Ku-band active radars.

A 17.8-20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers.

This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth orbit (LEO) constellations that operate in the 17.8 to 20.2 GHz frequency range. The proposed architecture uses four variable gain amplifiers (VGA) that are active at any given time and are switched to generate the four quadrants. Compared to conventional architectures, this structure is more compact and produces double the output amplitude. The design offers 6-bit phase control for 360°, and the total root mean square (RMS) phase and gain errors are 2.36° and 1.46 dB, respectively. The design occupies an area of 1309.4 µm × 1783.8 µm (including pads).

Single-Event Transients in an IEEE 802.15.4 RF Receiver for Wireless Sensor Networks.

This paper presents a procedure to analyse the effects of radiation in an IEEE 802.15.4 RF receiver for wireless sensor networks (WSNs). Specifically, single-event transients (SETs) represent one of the greatest threats to the adequate performance of electronic communication devices in high-radiation environments. The proposed procedure consists in injecting current pulses in sensitive nodes of the receiver and analysing how they propagate through the different circuits that form the receiver. In order to perform this analysis, a Complementary Metal Oxide Semiconductor (CMOS) low-IF receiver has been designed using a 0.18 µm technology from the foundry UMC. In order to analyse the effect of single-event transients in this receiver, it has been studied how current pulses generated in the low-noise amplifier propagate down the receiver chain. The effect of the different circuits that form the receiver on this kind of pulse has been studied prior to the analysis of the complete receiver. First, the effect of SETs in low-noise amplifiers was analysed. Then, the propagation of pulses through mixers was studied. The effect of filters in the analysed current pulses has also been studied. Regarding the analysis of the designed RF receiver, an amplitude and phase shift was observed under the presence of SETs.