Impact of Film Thickness of Ultrathin Dip-Coated Compact TiO2 Layers on the Performance of Mesoscopic Perovskite Solar Cells.

Uniform and pinhole-free electron-selective TiO2 layers are of utmost importance for efficient perovskite solar cells. Here we used a scalable and low-cost dip-coating method to prepare uniform and ultrathin (5-50 nm) compact TiO2 films on fluorine-doped tin oxide (FTO) glass substrates. The thickness of the film was tuned by changing the TiCl4 precursor concentration. The formed TiO2 follows the texture of the underlying FTO substrates, but at higher TiCl4 concentrations, the surface roughness is substantially decreased. This change occurs at a film thickness close to 20-30 nm. A similar TiCl4 concentration is needed to produce crystalline TiO2 films. Furthermore, below this film thickness, the underlying FTO might be exposed resulting in pinholes in the compact TiO2 layer. When integrated into mesoscopic perovskite solar cells there appears to be a similar critical compact TiO2 layer thickness above which the devices perform more optimally. The power conversion efficiency was improved by more than 50% (from 5.5% to ∼8.6%) when inserting a compact TiO2 layer. Devices without or with very thin compact TiO2 layers display J-V curves with an "s-shaped" feature in the negative voltage range, which could be attributed to immobilized negative ions at the electron-extracting interface. A strong correlation between the magnitude of the s-shaped feature and the exposed FTO seen in the X-ray photoelectron spectroscopy measurements indicates that the s-shape is related to pinholes in the compact TiO2 layer when it is too thin.

Determination of Surface Recombination Velocities at Contacts in Organic Semiconductor Devices Using Injected Carrier Reservoirs.

A method to determine surface recombination velocities at collecting contacts in interface-limited organic semiconductor devices, based on the extraction of injected carrier reservoirs in a single-carrier sandwich-type structure, is presented. The analytical framework is derived and verified with drift-diffusion simulations. The method is demonstrated on solution-processed organic semiconductor devices with hole-blocking TiO_{2}/organic and SiO_{2}/organic interfaces, relevant for solar cell and transistor applications, respectively.

Investigation of plasmonic gold-silica core-shell nanoparticle stability in dye-sensitized solar cell applications.

Plasmonic core-shell Au@SiO2 nanoparticles have previously been shown to enhance the performance of dye-sensitized solar cells (DSSCs). A thin silica coating can provide a better stability during thermal processing and chemical stability to survive the corrosive electrolyte used in DSSCs. However, the thickness and completeness of the silica shell has proven crucial for the performance of the plasmonic particles and is largely controlled by the linking chemistry between the gold core and silica shell. We have evaluated four different silica coating procedures of ∼15 nm gold nanoparticles for usage in DSSCs. The chemical stability of these core-shell nanoparticles was assessed by dispersing the particles in iodide/triiodide electrolyte solution and the thermal stability by heating the particles up to 500°C. In order to maintain stable gold cores a complete silica coating was required, which was best obtained by using a mercaptosilane as a linker. In situ TEM characterization indicated that the heating process only had minor effects on the core-shell particles. The final step was to evaluate how the stable Au@SiO2 nanoparticles were influencing a real DSSC device when mixed into the TiO2 photoanode. The plasmon-incorporated DSSCs showed a ∼10% increase in efficiency compared to devices without core-shell nanoparticles.

Effect of a large hole reservoir on the charge transport in TiO2/organic hybrid devices.

We have fabricated hybrid devices in the form of indium tin oxide/titanium dioxide/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/copper (ITO/TiO(2)/P3HT:PCBM/Cu) to clarify the impact of the TiO(2)/P3HT:PCBM interface on the charge transport using the charge extraction by linearly increasing voltage (CELIV) technique. We found that a large equilibrium charge reservoir is accumulated at negative offsets at the TiO(2)/P3HT:PCBM interface leading to space charge limited extraction current (SCLC) transients. We show analytically the SCLC transient response and compare the experimental data to calculated SCLC at a linearly increasing voltage. The theoretical calculations indicate that the large charge reservoir at negative offset voltages is due to thermally generated charges combined with poor hole extraction at the ITO/TiO(2) contact, due to the hole blocking character of TiO(2).