Effect of Detailed OSCE Score Reporting on Learning and Anxiety in Medical School.

INTRODUCTION: There is growing literature on increasing feedback from Objective Structured Clinical Examinations (OSCEs) and one approach is a score report. The purpose of this study was to implement and evaluate a score report for a second and fourth-year medical school OSCE. METHODS: We developed an electronic OSCE score report that displayed comments and performance by domain within and across stations (checklist items and rating scales were tagged to each domain). Our initial pilot released the score report after pass/fail decisions but subsequent iterations released the score report the same day as the exam. Our evaluation approach included both student surveys and focus groups. RESULTS: Students felt the OSCE score report was accurate, identified strengths and weaknesses, and would likely cause them to take future action, with second-year students more likely to act on the report than fourth year students. The thematic analysis revealed barriers and enablers to utilizing feedback as well as the power of the score report to reduce anxiety. CONCLUSIONS: Our OSCE score report was simple to develop and implement the same day as an OSCE with an overall positive response from students with respect to accuracy and ability to use the information for future learning.

Scaling limits of resistive memories.

This paper is intended to provide an expository, physics-based, framework for the estimation of the performance potential and physical scaling limits of resistive memory. The approach taken seeks to provide physical insights into those parameters and physical effects that define device performance and scaling properties. The mechanisms of resistive switching are based on atomic rearrangements in a material. The three model cases are: (1) formation of a continuous conductive path between two electrodes within an insulating matrix, (2) formation of a discontinuous path of conductive atoms between two electrodes within an insulating matrix and (3) rearrangement of charged defects/impurities near the interface between the semiconductor matrix and an electrode, resulting in contact resistance changes. The authors argue that these three model mechanisms or their combinations are representative of the operation of all known resistive memories. The central question addressed in this paper is: what is the smallest volume of matter needed for resistive memory? The two related tasks explored in this paper are: (i) resistance changes due to addition or removal of a few atoms and (ii) stability of a few-atom system.

A mechanistic study of sialic acid mutarotation: implications for mutarotase enzymes.

The mutarotation of N-acetylneuraminic acid (Neu5Ac) proceeds by four kinetically distinct pathways: (i) the acid-catalyzed reaction of neutral Neu5Ac; (ii) the spontaneous reaction of the carboxylic acid (the kinetically equivalent acid-catalyzed reaction on the anion being ruled out by the solvent deuterium kinetic isotope effect of 3.74 ± 0.68); (iii) a spontaneous, water-catalyzed, reaction of the anion; and (iv) a specific-base catalyzed reaction of the anion. The magnitude of the solvent kinetic isotope effect, k(H2O)/k(D2O) = 4.48 ± 0.74 is consistent with a ring-opening transition state in which a water molecule is deprotonating the anomeric hydroxyl group in concert with strengthening solvation of the ring oxygen atom. The mechanistic implications for Neu5Ac mutarotases are discussed.